MAC229-8 [DIGITRON]
SILICON BIDIRECTIONAL THYRISTORS;
| 型号： | MAC229-8 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | SILICON BIDIRECTIONAL THYRISTORS 三端双向交流开关 |
| 文件： | 总2页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
MAC229(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, ½ sine wave, 50 to 60Hz, gate open)
MAC229-4, MAC229A-4
200
400
600
800
VDRM
Volts
MAC229-6, MAC229A-6
MAC229-8, MAC229A-8
MAC229-10, MAC229A-10
RMS on-state current (Full cycle sine wave, 50 to 60Hz, TC = 80°C)
IT(RMS)
ITSM
8
Amps
Amps
Peak non-repetitive surge current
(1 cycle, 60Hz, TJ = 110°C)
80
Circuit fusing considerations (t = 8.3ms)
Peak gate current (t ≤ 2µs)
I2t
IGM
26
A2s
Amps
Volts
Watts
Watts
°C
±2
Peak gate voltage (t ≤ 2µs)
VGM
PGM
PG(AV)
TJ
±10
Peak gate power (t ≤ 2µs)
20
0.5
Average gate power (TC = 80°C, t ≤ 8.3ms)
Operating junction temperature range
Storage temperature range
-40 to +110
-40 to +150
8
Tstg
°C
Mounting torque
In. lb.
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
2.2
60
RӨJA
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Symbol
Min
Typ.
Max
Unit
(2)
Peak blocking current
(VD = Rated VDRM, gate open, TJ = 25°C)
(VD = Rated VDRM, gate open, TJ = 110°C)
IDRM
-
-
-
-
10
2
µA
mA
Peak on-state voltage
VTM
Volts
mA
(ITM = 11A peak, pulse width ≤ 2ms, duty cycle ≤ 2%.)
-
-
1.8
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
-
-
-
-
10
15
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
-
-
-
-
2.0
2.5
Volts
VGT
(VD = Rated VDRM, RL = 10kΩ, TC = 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-), all types
MT2(-),G(+) “A” suffix only
0.2
0.2
-
-
-
-
Holding current
IH
mA
µs
(VD = 12V, ITM = 200mA, gate open)
-
-
-
15
-
Gate controlled turn-on time
tgt
(VD = Rated VDRM, ITM = 16A, IG = 30mA)
1.5
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130213
D I G I T R O N S E M I C O N D U C T O R S
MAC229(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Characteristic
Symbol
Min
Typ.
Max
Unit
Critical rate of rise of off-state voltage
dv/dt
V/µs
(VD = Rated VDRM, exponential waveform, TC = 110°C)
-
25
-
Critical rate of rise of commutation voltage
(VD = Rated VDRM, ITM = 11.3A peak, commutating di/dt = 4.1A/ms, gate unenergized,
TC = 80°C)
dv/dt(c)
V/µs
-
5
-
Note 2: Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltages such that the voltage applied exceeds the rated
blocking voltage.
MECHANICAL CHARACTERISTIC
Case
TO-220AB
Marking
Pin out
Alpha-numeric
See below
TO-220AB
Millimeters
Min Max
Inches
Min Max
A
B
C
D
F
0.575 0.620 14.600 15.750
0.380 0.405 9.650 10.290
0.160 0.190 4.060
0.025 0.035 0.640
0.142 0.147 3.610
0.095 0.105 2.410
0.110 0.155 2.790
0.014 0.022 0.360
4.820
0.890
3.730
2.670
3.930
0.560
G
H
J
K
L
0.500 0.562 12.700 14.270
0.045 0.055 1.140
0.190 0.210 4.830
0.100 0.120 2.540
0.080 0.110 2.040
0.045 0.055 1.140
0.235 0.255 5.970
1.390
5.330
3.040
2.790
1.390
6.480
1.270
-
N
Q
R
S
T
U
V
Z
-
0.045
-
0.050
-
-
1.140
-
0.080
2.030
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130213
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