MCR106-6 [DIGITRON]
SILICON CONTROLLED RECTIFIERS;
| 型号： | MCR106-6 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | SILICON CONTROLLED RECTIFIERS |
| 文件： | 总3页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
MCR106 SERIES
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR106-1
MCR106-2
MCR106-3
MCR106-4
MCR106-5
MCR106-6
MCR106-7
MCR106-8
30
60
VDRM
VRRM
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 93°C)
Average on-state current (180° conduction angles, TC = 93°C)
IT(RMS)
IT(AV)
4.0
A
A
2.55
Peak non-repetitive surge current
ITSM
A
(half-cycle, sine wave, 60Hz, TJ = 110°C)
25
2.6
0.5
0.1
0.2
Circuit fusing consideration (t = 8.3ms)
I2t
PGM
A2s
W
W
A
Forward peak gate power (pulse width ≤ 1.0µs, TC = 93°C)
Forward average gate power (t = 8.3ms, TC = 93°C)
Forward peak gate current (pulse width ≤ 1.0µs, TC = 93°C)
PG(AV)
IGM
Peak reverse gate voltage
VRGM
V
(pulse width ≤ 1.0µs, TC = 93°C)
6.0
Operating junction temperature range
Storage temperature range
Mounting torque(2)
TJ
Tstg
-
-40 to +110
-40 to +150
6.0
°C
°C
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and
heatsink contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
Thermal resistance, junction to case
Thermal resistance, junction to ambient
3.0
75
RӨJA
Lead solder temperature
TL
°C
(lead length ≥ 1/8” from case, 10s max)
260
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, RGK = 1000Ω)
TC = 25°C
IDRM,
IRRM
µA
-
-
-
-
10
TC = 110°C
200
ON CHARACTERISTICS
Peak forward on-state voltage(3)
VTM
V
(ITM = 4.0A peak)
-
-
2.0
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
D I G I T R O N S E M I C O N D U C T O R S
MCR106 SERIES
SILICON CONTROLLED RECTIFIERS
(4)
Gate trigger current (continuous dc)
(VAK = 7V, RL = 100Ω)
(TC = -40°C)
Gate trigger voltage (continuous dc)(4)
(VAK = 7V, RL = 100Ω)
Gate non-trigger voltage(4)
(VAK = 12V, RL = 100Ω, TJ = 110°C)
Holding current
(VAK = 7V, initiating current = 200mA, gate open)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
dv/dt
V/µs
(TC = 110°C)
-
10
-
Note 3: Pulse width ≤ 1.0ms, duty cycle ≤ 1%.
Note 4: RGK current is not included in measurement.
MECHANICAL CHARACTERISTICS
Case
TO-126
Marking
Pin out
Alpha-numeric
See below
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
D I G I T R O N S E M I C O N D U C T O R S
MCR106 SERIES
SILICON CONTROLLED RECTIFIERS
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130115
相关型号：
MCR106-6-1
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-225AA
MOTOROLA
MCR106-6-T60-K
Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-126, TO-126, 3 PIN
UTC
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