MCR69-2 [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 16; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-220AB;
| 型号： | MCR69-2 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 16; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-220AB |
| 文件： | 总5页 (文件大小：1240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR69-1
VDRM
VRRM
25
50
V
MCR69-2
MCR69-3
100
Peak discharge current(2)
ITM
750
25
A
A
A
On-state RMS current (180° conduction angles, TC = 85°C)
Average on-state current (180° conduction angles, TC = 85°C)
IT(RMS)
IT(AV)
16
Peak non-repetitive surge current
ITSM
A
(half-cycle, sine wave, 60Hz, TJ = 125°C)
300
375
Circuit fusing consideration (t = 8.3ms)
I2t
IGM
PGM
PG(AV)
TJ
A2s
A
≤ 1.0µs, T
Forward peak gate current (pulse width
Forward peak gate power (pulse width
C = 85°C)
2.0
≤ 1.0µs, T
C = 85°C)
20
W
Forward average gate power (t = 8.3ms, TC = 85°C)
Operating junction temperature range
Storage temperature range
0.5
W
-40 to +125
-40 to +150
8.0
°C
Tstg
-
°C
Mounting torque
In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Ratings apply for tw = 1ms.
Note 3: Test conditions: IG = 150mA, VD = rated VDRM, ITM = rated value, TJ = 125°C.
THERMAL CHARACTERISTICS
Characteristic
Symbol
RӨJC
Maximum
Unit
°C/W
°C/W
Thermal resistance, junction to case
Thermal resistance, junction to ambient
1.5
60
RӨJA
Lead solder temperature
TL
°C
(lead length 1/8” from case, 10s max)
260
Rev. 20130115
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TC = 25°C
IDRM,
IRRM
-
-
-
-
10
µA
2.0
TC = 125°C
mA
ON CHARACTERISTICS
Peak forward on-state voltage*
(ITM = 50A)(4)
(ITM = 750A, tw = 1ms)(5)
VTM
-
-
-
1.8
-
V
6.0
Gate trigger current (continuous dc)
IGT
mA
V
Ω)
(VAK = 12V, RL = 100
2.0
-
7.0
30
1.5
-
Gate trigger voltage (continuous dc)
Ω)
VGT
(VAK = 12V, RL = 100
Gate non-trigger voltage
Ω, T
0.65
0.40
VGD
IH
V
(VAK = 12V, RL = 100
Holding current
J = 125°C)
0.2
mA
mA
µs
(VD = 12V, initiating current = 200mA, gate open)
3.0
15
-
50
60
-
Latching current
IL
(VD = 12V, IG = 150mA)
-
-
Gate controlled turn-on time(6)
(VD = rated VDRM, IG = 150mA)
(ITM = 50A peak)
tgt
1.0
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
dv/dt
di/dt
V/µs
A/µs
(VD = rated VDRM, gate open, exponential waveform, TJ = 125°C)
10
-
-
-
-
Critical rate of rise of on-state current(6)
(IG = 150mA, TJ = 125°C)
100
≤ 300µs, duty cycle ≤ 2%.
Note 4: Pulse width
Note 5: Ratings apply for tw = 1ms.
Note 6: The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
Rev. 20130115
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Pin out:
Body painted, alpha-numeric
See below
Rev. 20130115
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130115
MCR69 SERIES
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130115
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