DTB6035 [DINTEK]
N-Channel Reduced Qg, Fast Switching MOSFET; N沟道减少的Qg ，快速开关MOSFET
| 型号： | DTB6035 |
| 厂家： | 
DinTek Semiconductor Co,.Ltd |
| 描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 文件： | 总6页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DT#
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N-Channel Reduced Q , Fast Switching MOSFET
g
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFETs
VDS (V)
R
DS(on) (Ω)
ID (A)
8.5
0.022 at VGS = 10 V
0.031 at VGS = 4.5 V
•
•
•
60
7.2
175 °C Maximum Junction Temperature
Compliant to RoHS Directive 2002/95/EC
D
SOT-223
D
G
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
VDS
60
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
TA = 70 °C
8.5
7.1
6.0
5.0
Continuous Drain Current (TJ = 175 °C)a
ID
A
IDM
IAS
40
15
11
Pulsed Drain Current
Avalanche Current
EAS
mJ
W
Single Pulse Avalanche Energy
TA = 25 °C
TA = 70 °C
3.3
2.3
1.7
1.2
Maximum Power Dissipationa
PD
TJ, Tstg
- 55 to 175
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
36
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
45
90
20
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
RthJA
75
°C/W
RthJF
17
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
1
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SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
60
1
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
nA
µA
A
3
VDS = 0 V, VGS
=
20 V
100
1
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
V
20
ID(on)
40
VGS = 10 V, ID = 6.0 A
0.018
0.031
0.039
0.025
25
0.022
0.037
0.047
0.031
V
GS = 10 V, ID = 6.0 A, TJ = 125 °C
GS = 10 V, ID = 6.0 A, TJ = 175 °C
GS = 4.5 V, ID = 5.1 A
Drain-Source On-State Resistancea
RDS(on)
Ω
V
V
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 6.0 A
IS = 1.7 A, VGS = 0 V
S
V
VSD
0.8
1.2
27
Qg
Qgs
Qgd
Rg
18
3.4
5.3
1.4
10
10
25
12
50
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 30 V, VGS = 10 V, ID = 6.0 A
VGS = 0.1 V, f = 5 MHz
nC
0.5
2.4
20
20
50
24
80
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 30 V, RL = 30 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
ns
Turn-Off Delay Time
Fall Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
32
24
16
8
40
32
24
16
8
V
GS
= 10 V thru 5 V
4 V
T
= 150 °C
C
25 °C
3 V
- 55 °C
4
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
5
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
2
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1400
1200
1000
800
600
400
200
0
0.06
0.05
0.04
C
iss
V
= 4.5 V
GS
0.03
0.02
0.01
0.00
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
60
0
8
16
24
32
40
V
- Drain-to-Source Voltage (V)
I
D - Drain Current (A)
DS
On-Resistance vs. Drain Current
Capacitance
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 6.0 A
I
= 6.0 V
D
D
V
= 10 V
GS
V
= 30 V
DS
6
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
4
8
12
16
20
Q
- Total Gate Charge (nC)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
g
Gate Charge
50
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
T
= 175 °C
J
T
= 25 °C
J
I
= 6.0 A
D
1
0.00
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50
40
0.4
0.0
30
20
10
0
I
D
= 250 µA
- 0.4
- 0.8
- 1.2
- 50 - 25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
T - Temperature (°C)
Time (s)
J
Single Pulse Power
Threshold Voltage
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 75 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
4
Package Information
SOT-223 (HIGH VOLTAGE)
B
D
3
A
0.08 (0.003)
B1
C
M
M
0.10 (0.004) C B
A
4
3
H
E
M
M
0.20 (0.008) C A
L1
4 x L
1
2
3
3 x B
0.10 (0.004) C B
e
θ
M
M
e1
4 x C
MILLIMETERS
INCHES
DIM.
A
MIN.
1.55
0.65
2.95
0.25
6.30
3.30
MAX.
1.80
0.85
3.15
0.35
6.70
3.70
MIN.
0.061
0.026
0.116
0.010
0.248
0.130
MAX.
0.071
0.033
0.124
0.014
0.264
0.146
B
B1
C
D
E
e
2.30 BSC
4.60 BSC
0.0905 BSC
0.181 BSC
e1
H
6.71
0.91
7.29
-
0.264
0.036
0.287
-
L
L1
θ
0.061 BSC
0.0024 BSC
-
10'
-
10'
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
1
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Disclaimer
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1
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