2DB1184Q [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | 2DB1184Q |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总5页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DB1184Q
PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
Case: TO252-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
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•
•
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Ordering Information: See Page 3
Weight: 0.34 grams (approximate)
COLLECTOR
3
4
2
BASE
1
EMITTER
Device Schematic
Top View
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-60
-50
-5
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
Peak Pulse Collector Current
-3
A
-4.5
A
ICM
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C
Symbol
PD
Value
15
Unit
W
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
8.3
1.2
104
-55 to +150
°C/W
W
°C/W
°C
RθJC
PD
RθJA
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
-60
-50
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
-1
I
I
I
C = -50μA, IE = 0
C = -1mA, IB = 0
V
E = -50μA, IC = 0
VCB = -40V, IE = 0
VEB = - 4V, IC = 0
⎯
⎯
μA
μA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
-1
V
V
VCE(SAT)
VBE(SAT)
hFE
⎯
⎯
120
⎯
⎯
⎯
IC = -2A, IB = -0.2A
IC = -1.5A, IB = -0.15A
VCE = -3V, IC = -0.5A
-1.2
270
⎯
SMALL SIGNAL CHARACTERISTICS
V
CE = -5V, IC = -0.1A,
Current Gain-Bandwidth Product
Output Capacitance
110
26
MHz
pF
fT
⎯
⎯
⎯
⎯
f = 30MHz
Cobo
VCB = -10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
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© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
2DB1184Q
1,000
800
400
350
V
= -3V
CE
T
= 150°C
A
I
I
= -5mA
= -4mA
B
B
300
250
T
= 125°C
= 85°C
A
T
600
400
200
0
A
200
150
I
I
= -3mA
= -2mA
B
B
T
= 25°C
= -55°C
0.1
A
100
T
A
I
= -1mA
B
50
0
0.001
0.01
1
10
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
0.4
1.2
1.0
0.8
V
= -3V
CE
I
/I = 10
B
C
0.3
0.2
T
= -55°C
A
0.6
0.4
T
= 25°C
= 85°C
A
T
= 150°C
A
T
= 125°C
T
A
A
0.1
0
T = 125°C
A
T
= 85°C
A
T
= 150°C
A
0.2
0
T
= 25°C
A
T
= -55°C
A
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
100
10
1.2
f = 1MHz
I
/I = 10
B
C
1.0
0.8
T
= -55°C
A
C
ibo
T
= 25°C
A
0.6
0.4
T
= 85°C
A
T
A
= 125°C
T
= 150°C
A
C
obo
0.2
0
0.1
1
10
100
0.001
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
-IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Capacitance Characteristics
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
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© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
2DB1184Q
140
120
10
Pw = 100µs (mA)
V
= -5V
CE
f = 30MHz
Pw = 100ms (mA)
Pw = 10ms (mA)
100
80
1
Pw = 1ms (mA)
DC (mA)
60
40
0.1
20
0
T
= 25°C
A
Single Non-repetitive Pulse
0.01
0
10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 8 Safe Operating Area (Note 3)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 110°C/W
θ
JA
D = 0.02
D = 0.01
D = 0.005
0.01
P(pk)
T
t
1
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
Ordering Information (Note 5)
Part Number
Case
Packaging
2DB1184Q-13
TO252-3L
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2DB1184Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code 01-52
YYWW
2DB1184Q
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© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
2DB1184Q
Package Outline Dimensions
TO252-3L
Dim Min Typ
E
L3
b3
Max
2.39
1.17
0.88
1.14
5.50
0.58
6.20
6.70
A
A1
b
b2
b3
C2
D
2.19 2.29
0.97 1.07
0.64 0.76
0.76 0.95
5.21 5.33
0.45 0.51
6.00 6.10
6.45 6.58
D
E
b2
e
H
L
L3
L4
a
2.286 Typ.
9.40 9.91 10.41
L4
e
A
b
A1
H
1.40 1.59
0.88 1.08
0.64 0.83
1.78
1.27
1.02
10°
a
0°
-
SEATING
PLANE
L
C2
All Dimensions in mm
Suggested Pad Layout
X2
Dimensions
Value (in mm)
Z
11.6
1.5
7.0
2.5
7.0
6.9
2.3
Y2
X1
X2
Y1
Y2
C
Z
C
Y1
E1
X1
E1
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© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
2DB1184Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
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© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
相关型号：
2DB1188Q-13R
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DIODES
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