2N7002DW_17 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | 2N7002DW_17 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总5页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
I
D max
V(BR)DSS
RDS(ON) max
TA = +25°C
Low On-Resistance
Low Gate Threshold Voltage
60V
0.23A
7.5Ω @ VGS = 5V
Low Input Capacitance
Fast Switching Speed
Description
Low Input/Output Leakage
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
•
•
Motor Control
Power Management Functions
•
•
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
•
•
•
•
Weight: 0.006 grams (approximate)
SOT363
D2
G1
S1
S2
G2
D1
Top View
Top View
Internal Schematic
Ordering Information (Note 5)
Part Number
2N7002DW-7-F
2N7002DWQ-7-F
2N7002DW-13-F
2N7002DWQ-13-F
Compliance
Standard
Automotive
Standard
Case
Packaging
SOT363
SOT363
SOT363
SOT363
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
Automotive
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
YM
2 K 7
YM
2 K 7
K72
Y M
K72
Y M
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
…
2011
2012
2013
2014
2015
2016
2017
Code
J
K
L
M
N
P
R
…
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2013
© Diodes Incorporated
2N7002DW
Document number: DS30120 Rev. 16 - 2
2N7002DW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
V
V
60
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
VGSS
Continuous
±20
±40
Gate-Source Voltage
Pulsed
VGSS
TA = +25°C
0.23
0.18
0.14
Steady
State
TA = +70°C
A
Continuous Drain Current (Note 7) VGS = 5V
ID
TA = +100°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
0.53
0.8
A
A
IS
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.31
0.2
Units
W
T
A = +25°C
Total Power Dissipation (Note 6)
TA = +70°C
TA = +100°C
Steady state
PD
0.12
410
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
Rθ
JA
0.4
TA = +25°C
0.25
0.15
318
TA = +70°C
TA = +100°C
Steady state
PD
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
°C/W
°C/W
°C
Rθ
Rθ
JA
Steady state
135
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
60
⎯
⎯
70
⎯
⎯
V
BVDSS
IDSS
⎯
1.0
500
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
@ TC = +25°C
@ TC = +125°C
µA
nA
Gate-Body Leakage
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
2.0
V
VGS(th)
⎯
3.2
4.4
VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Static Drain-Source On-Resistance
@ TJ = +25°C
@ TJ = +125°C
7.5
13.5
RDS (ON)
⎯
Ω
On-State Drain Current
0.5
80
⎯
1.0
⎯
0.78
A
mS
V
ID(ON)
gFS
⎯
⎯
1.5
Forward Transconductance
Diode Forward Voltage
VSD
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
22
11
50
25
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
2.0
5.0
7.0
20
20
tD(on)
tD(off)
⎯
⎯
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
ns
Turn-Off Delay Time
11.0
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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November 2013
© Diodes Incorporated
2N7002DW
Document number: DS30120 Rev. 16 - 2
2N7002DW
7
6
5
1.0
0.8
0.6
0.4
0.2
0
4
3
2
1
0
1
2
3
4
5
0
0
0.2
0.4
ID, DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
0.6
0.8
1.0
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
2.0
1.5
6
5
4
3
2
VGS = 5.0V, ID = 0.05A
1.0
0.5
0
1
0
-55 -30
-5
20
45
70 95
120 145
C)
0
2
4
6
8
10 12 14 16 18
TJ, JUNCTION TEMPERATURE (
°
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3 On-Resistance vs. Junction Temperature
Figure 4 On-Resistance vs. Gate-Source Voltage
1
R
DS(on)
Limited
DC
P
= 10s
0.1
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.01
P
= 100µs
W
T
T
= 150°C
J(max)
= 25°C
A
Single Pulse
0.001
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 5 SOA, Safe Operation Area
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© Diodes Incorporated
2N7002DW
Document number: DS30120 Rev. 16 - 2
2N7002DW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT363
Min
0.10
1.15
2.00
Dim
Max
0.30
1.35
2.20
A
B
C
D
F
H
J
K
L
B C
0.65 Typ
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
H
K
J
M
M
α
L
D
F
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
C1
C2
0.42
0.6
1.9
C1
G
Y
Z
0.65
X
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November 2013
© Diodes Incorporated
2N7002DW
Document number: DS30120 Rev. 16 - 2
2N7002DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
2N7002DW
Document number: DS30120 Rev. 16 - 2
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