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元器件品牌
AP02002
[DIODES]
PACKAGE OUTLINE DIMENSIONS; 包装外形尺寸
元器件型号：
AP02002
生产厂家：
DIODES INCORPORATED
描述和应用：
PACKAGE OUTLINE DIMENSIONS
包装外形尺寸
PDF文件：
总51页 (文件大小：1138K)
下载文档：
下载PDF数据表文档文件
型号参数：AP02002参数
查看货源
AP02002_1
PACKAGE OUTLINE DIMENSIONS
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DIODES
AP02002_12
PACKAGE OUTLINE DIMENSIONS
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8
DIODES
AP0203GMT-HF
Simple Drive Requirement SO-8 Compatible with Heatsink
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46
A-POWER
AP025R6-00
Transfer Switch, 23000MHz Min, 26000MHz Max, 1 Func, 2.3dB Insertion Loss-Max, GAAS, DIE
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0
SKYWORKS
AP028R4-00
SP4T, 23000MHz Min, 31000MHz Max, 1 Func, 1.9dB Insertion Loss-Max, GAAS, DIE
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156
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0
SKYWORKS
AP02N40H
TRANSISTOR 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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0
A-POWER
AP02N40H/J
Fast Switching Characteristic
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0
A-POWER
AP02N40H-HF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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31
A-POWER
AP02N40H-J
Fast Switching Characteristic
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156
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0
A-POWER
AP02N40I-HF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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19
A-POWER
AP02N40J-HF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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17
A-POWER
AP02N40K-HF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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20
A-POWER
AP02N40K-HF
TRANSISTOR 0.45 A, 400 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
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0
A-POWER
AP02N40P
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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18
A-POWER
AP02N60H
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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A-POWER
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