AP2142AMPG-13 [DIODES]

Power Supply Support Circuit, Fixed, 2 Channel, PDSO8, GREEN, MSOP-8;
AP2142AMPG-13
型号: AP2142AMPG-13
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Power Supply Support Circuit, Fixed, 2 Channel, PDSO8, GREEN, MSOP-8

光电二极管
文件: 总16页 (文件大小:871K)
中文:  中文翻译
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AP2142A/ AP2152A  
0.5A DUAL CHANNEL CURRENT-LIMITED  
POWER SWITCH WITH OUTPUT DISCHARGE  
Description  
Pin Assignments  
The AP2142A and AP2152A are dual channel current-limited  
integrated high-side power switches optimized for Universal Serial  
Bus (USB) and other hot-swap applications. The family of devices  
complies with USB standards and available with both polarities of  
enable input.  
( Top View )  
1
2
3
4
8
7
6
5
GND  
FLG1  
OUT1  
OUT2  
FLG2  
IN  
The devices have fast short-circuit response time for improved overall  
system robustness, and have integrated output discharge function to  
ensure completely controlled discharging of the output voltage  
capacitor. They provide a complete protection solution for application  
subject to heavy capacitive loads and the prospect of short circuit,  
and offer reverse current blocking, over-current, over-temperature  
and short-circuit protection, as well as controlled rise time and under-  
voltage lockout functionality. A 7ms deglitch capability on the open-  
drain flag output prevents false over-current reporting and does not  
require any external components.  
EN1  
EN2  
SO-8  
( Top View )  
1
8
7
6
FLG1  
GND  
IN  
2
OUT1  
OUT2  
FLG2  
3
4
EN1  
EN2  
All devices are available in SO-8, MSOP-8EP and U-DFN3030-8  
packages.  
5
MSOP-8EP  
( Top View )  
Features  
Dual Channel Current-Limited Power Switch with Output  
Discharge  
1
Fast Short-Circuit Response Time: 2µs  
0.7A Accurate Current Limiting  
GND  
8
7
6
5
FLG1  
2
3
4
IN  
OUT1  
OUT2  
FLG2  
Reverse Current Blocking  
85mOn-Resistance  
EN1  
EN2  
Input Voltage Range: 2.7V – 5.5V  
Built-In Soft-Start with 0.6ms Typical Rise Time  
Short Circuit and Thermal Protection  
Fault Report (FLG) with Blanking Time (7ms typ)  
ESD protection: 2kV HBM, 300V MM  
Active High (AP2152A) or Active Low (AP2142A) Enable  
Ambient Temperature Range: -40°C to +85°C  
SO-8, MSOP-8EP and DFN3030E-8 (Exposed Pad): Available  
in “Green” Molding Compound (No Br, Sb)  
U-DFN3030-8  
Applications  
LCD TVs & Monitors  
Set-Top-Boxes, Residential Gateways  
Laptops, Desktops, Servers,  
.
.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Printers, Docking Stations, HUBs  
UL Recognized, File Number E322375  
IEC60950-1 CB Scheme Certified  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
1 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Applications Circuit  
AP2152A Enable Active High  
Power Supply  
2.7V to 5.5V  
Load  
IN  
OUT 1  
OUT 2  
1uF  
1uF  
4.7uF*  
1uF  
10k  
10k  
FLG 1  
FLG 2  
Load  
4.7uF*  
ON  
EN1  
EN2  
GND  
OFF  
Note: * USB 2.0 requires 120uF per hub  
Available Options  
Part Number  
Enable Pin  
(EN)  
Current Limit  
Recommended Maximum  
Continuous Load Current  
Channel  
(typ)  
0.7A  
0.7A  
AP2142A  
AP2152A  
2
2
Active Low  
Active High  
0.5A  
0.5A  
Pin Descriptions  
Pin Number  
Pin Name  
Function  
MSOP-8EP  
U-DFN3030-8  
SO-8  
GND  
IN  
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
Ground  
Voltage input pin  
EN1  
Switch 1 enable input, active low (AP2142A) or active high (AP2152A)  
Switch 2 enable input, active low (AP2142A) or active high (AP2152A)  
EN2  
FLG2  
OUT2  
OUT1  
FLG1  
Switch 2 over-current and over-temperature fault report; open-drain flag is active low when triggered  
Switch 2 voltage output pin  
Switch 1 voltage output pin  
Switch 1 over-current and over-temperature fault report; open-drain flag is active low when triggered  
Exposed Pad:  
Exposed Pad  
-
Exposed Pad It should be connected to GND and thermal mass for enhanced thermal impedance.  
It should not be used as electrical ground conduction path.  
2 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Functional Block Diagram  
FLG 1  
Therm al  
Sense  
AP2142A, AP2152A  
Deglitch  
Current  
Lim it  
EN1  
Driver  
G ND  
UVLO  
Current  
Sense  
O UT1  
Discharge  
Control  
IN  
Current  
Sense  
O UT2  
FLG 2  
Discharge  
Control  
UVLO  
Current  
Lim it  
Driver  
EN2  
Deglitch  
Therm al  
Sense  
G ND  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Symbol  
ESD HBM  
ESD MM  
VIN  
Parameter  
Human Body Model ESD Protection  
Machine Model ESD Protection  
Input Voltage  
Ratings  
Unit  
kV  
V
2
300  
6.5  
V
Output Voltage  
V
VOUT  
VIN +0.3  
6.5  
Enable Voltage  
V
VEN , VFLG  
ILOAD  
TJ(MAX)  
TST  
Maximum Continuous Load Current  
Maximum Junction Temperature  
Storage Temperature Range (Note 4)  
Internal Limited  
150  
A
°C  
°C  
-65 to +150  
Note:  
4. UL Recognized Rating from -30°C to +70°C (Diodes qualified TST from -65°C to +150°C)  
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)  
Symbol  
VIN  
Parameter  
Min  
2.7  
0
Max  
5.5  
Unit  
V
Input Voltage  
Output Current  
500  
VIN  
0.8  
mA  
V
IOUT  
VIH  
2
High-Level Input Voltage on EN or  
EN  
0
V
VIL  
Low-Level Input Voltage on EN or EN  
Operating Ambient Temperature Range  
-40  
+85  
°C  
TA  
3 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.)  
Symbol  
VUVLO  
ISHDN  
IQ  
Parameter  
Test Conditions (Note 5)  
Min  
Typ  
2.0  
Max  
2.4  
1
Unit  
V
Input UVLO  
1.6  
Input Shutdown Current  
Input Quiescent Current, Dual  
Input Leakage Current  
0.1  
µA  
µA  
µA  
µA  
Disabled, IOUT = 0  
115  
180  
1
Enabled, IOUT = 0  
Disabled, OUT grounded  
ILEAK  
IREV  
Reverse Leakage Current  
0.01  
90  
0.1  
110  
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN  
SO-8  
V
IN = 5V, IOUT = 0.5A,  
MSOP-8EP,  
TA = +25°C  
85  
105  
U-DFN3030-8  
Switch On-Resistance  
135  
130  
mΩ  
RDS(ON)  
VIN = 5V, IOUT = 0.5A, -40°C TA +85°C  
SO-8  
110  
105  
VIN = 3.3V, IOUT = 0.5A,  
MSOP-8EP,  
U-DFN3030-8  
TA = +25°C  
125  
170  
VIN = 3.3V, IOUT = 0.5A, -40°C TA +85°C  
Over-Load Current Limit  
0.55  
1.1  
0.7  
1.4  
1.0  
1.0  
0.85  
A
A
A
A
ILIMIT  
ILIMIT_G  
ITrig  
VIN = 5V, VOUT = 4V, CL = 4.7µF -40°C TA +85°C  
VIN = 5V, VOUT = 4V, OUT1 &  
-40°C TA +85°C  
Ganged Over-Load Current Limit  
1.7  
OUT2 tied together, CL = 4.7µF  
Current Limiting Trigger Threshold  
Output Current Slew rate (<100A/s), CL = 4.7µF  
OUT1 & OUT2 tied together, Output Current Slew rate  
(<100A/s), CL = 4.7µF  
Ganged Current Limiting Trigger  
Threshold  
ITrig_G  
OUTx connected to ground, device enabled into short  
circuit, CL = 4.7µF  
Short-Circuit Current per Channel  
Ganged Short-Circuit Current  
0.7  
A
A
IOS  
OUT1 & OUT2 connected to ground, device enabled into  
short-circuit, CL = 4.7µF  
1.1  
2
1.4  
2
1.7  
0.8  
IOS_G  
Short-Circuit Response Time  
EN Input Logic Low Voltage  
EN Input Logic High Voltage  
EN Input Leakage  
µs  
V
TSHORT  
VIL  
VOUT = 0V to IOUT = ILIMIT (output shorted to ground)  
VIN = 2.7V to 5.5V  
V
VIH  
VIN = 2.7V to 5.5V  
1
µA  
µA  
ms  
ms  
ms  
ms  
ISINK  
ILEAK-O  
TR  
VEN = 0V to 5.5V  
Output Leakage Current  
Output Turn-On Rise Time  
Output Turn-Off Fall Time  
Output Turn-On Delay Time  
Output Turn-Off Delay Time  
FLG Output FET On-Resistance  
FLG Off Current  
0.5  
0.6  
0.05  
0.2  
0.1  
20  
1
Disabled, VOUT = 0V  
1.5  
0.3  
0.5  
0.3  
40  
1
CL = 1µF, RLOAD = 10Ω  
CL = 1µF, RLOAD = 10Ω  
CL = 100µF, RLOAD = 10Ω  
CL = 100µF, RLOAD = 10Ω  
TF  
TD(ON)  
TD(OFF)  
RFLG  
IFOH  
I
FLG = 10mA  
0.01  
7
µA  
ms  
VFLG = 5V  
CL =4.7µF  
FLG Blanking Time  
4
15  
TBlank  
RDIS  
Discharge Resistance (Note 6)  
Thermal Shutdown Threshold  
Thermal Shutdown Hysteresis  
100  
140  
V
IN = 5V, disabled, IOUT =1mA  
TSHDN  
THYS  
Enabled, RLOAD =1kΩ  
C  
C  
25  
115  
75  
SO-8 (Note 7)  
Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 8)  
U-DFN3030-8 (Note 8)  
°C/W  
θJA  
60  
Notes:  
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.  
6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when VIN < VUVLO). The  
discharge function offers a resistive discharge path for the external storage capacitor for limited time.  
7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.  
8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top  
layer and thermal vias to bottom layer ground plane.  
4 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics  
VEN  
VEN  
50%  
50%  
50%  
50%  
TD(OFF)  
TD(OFF)  
TR  
TR  
TF  
TF  
TD(ON)  
TD(ON)  
90%  
90%  
90%  
90%  
VOUT  
VOUT  
10%  
10%  
10%  
10%  
Figure 1 Voltage Waveforms: AP2142A (left), AP2152A (right)  
Figure 2 Response Time to Short Circuit Waveform  
All Enable Plots are for AP2152A Active High  
Turn-On Delay and Rise Time  
Turn-Off Delay and Fall Time  
EN  
5V/div  
EN  
5V/div  
Iin  
500mA/div  
Iin  
500mA/div  
C =1µF  
L
T
= +25°C  
C =1µF  
A
L
Vout  
2V/div  
Vout  
2V/div  
R =10  
T
= +25°C  
L
A
R =10ꢀ  
L
500µs/div  
500µs/div  
5 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics (cont.)  
Turn-On Delay and Rise Time  
Turn-Off Delay and Fall Time  
EN  
5V/div  
EN  
5V/div  
Iin  
500mA/div  
Iin  
500mA/div  
C =100F  
L
T
= +25°C  
A
R =10ꢀ  
L
Vout  
2V/div  
Vout  
2V/div  
C =100F  
L
T
= +25°C  
A
R =10ꢀ  
L
500µs/div  
500µs/div  
Short Circuit Current,  
Inrush Current with  
Device Enabled Into Short  
Different Load Capacitance  
EN  
5V/div  
EN  
5V/div  
V
=5V  
IN  
CL=470F  
T
= +25°C  
A
CL=100F CL=220F  
C =1F  
L
VIN=5V  
TA= +25°C  
RL=10ꢀ  
Iin  
Iout  
500mA/div  
500mA/div  
1ms/div  
500µs/div  
3 Load Connected to Enabled Device  
2 Load Connected to Enabled Device  
V
=5V  
IN  
V
=5V  
IN  
T
= +25°C  
T = +25°C  
A
A
C =1F  
L
C =1F  
L
FLG  
FLG  
2V/div  
2V/div  
Iout  
500mA/div  
Iout  
500mA/div  
2ms/div  
2ms/div  
6 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics (cont.)  
Short Circuit with Blanking Time and Recovery  
Power On  
FLG  
5V/div  
Vout  
5V/div  
T
= +25°C  
A
C =1F  
R =10ꢀ  
L
L
Iout  
200mA/div  
FLG  
5V/div  
V
=5V  
IN  
Vin  
5V/div  
T
= +25°C  
A
C =1F  
L
Iout  
Vout  
5V/div  
1A/div  
20ms/div  
1ms/div  
Power Off  
Device Enabled  
FLG  
5V/div  
FLG  
5V/div  
T
= +25°C  
A
C =1F  
L
R =10ꢀ  
L
Iout  
200mA/div  
Iout  
200mA/div  
Vin  
5V/div  
EN  
5V/div  
Vout  
5V/div  
T
= +25°C  
Vout  
5V/div  
A
C =1F  
L
R =10ꢀ  
L
10ms/div  
1ms/div  
Device Disabled  
UVLO Increasing  
FLG  
5V/div  
Vin  
2V/div  
T
= +25°C  
A
Iout  
200mA/div  
C =1F  
L
Vout  
5V/div  
R =10ꢀ  
L
EN  
5V/div  
Iout  
200mA/div  
T
= +25°C  
A
Vout  
5V/div  
C =1F  
L
R =10ꢀ  
L
1ms/div  
1ms/div  
7 of 16  
www.diodes.com  
March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics (cont.)  
UVLO Decreasing  
UVLO Increasing (No Load)  
T
= +25°C  
A
Vin  
2V/div  
C =1F  
R =10ꢀ  
L
L
Vin  
2V/div  
Vout  
5V/div  
Vout  
5V/div  
Iout  
200mA/div  
T
= +25°C  
A
C =1F  
L
R =0ꢀ  
L
20ms/div  
1ms/div  
Channel 1 Enabled and Shorted  
with Channel 2 Enabled  
UVLO Decreasing (No Load)  
V
=5V  
IN  
T
= +25°C  
A
T
= +25°C  
A
C =1F  
R =0ꢀ  
L
L
Vin  
2V/div  
Vout1  
5V/div  
C =1F  
L
FLG1  
5V/div  
Vout2  
5V/div  
Vout  
5V/div  
FLG2  
5V/div  
20ms/div  
5ms/div  
Channel 2 Enabled and Shorted  
with Channel 1 Enabled  
Channels 1 and 2 Enabled and Shorted  
Vout1  
5V/div  
Vout1  
5V/div  
FLG1  
5V/div  
FLG1  
5V/div  
V
=5V  
IN  
T
=25°C  
A
C =1F  
L
Vout2  
5V/div  
Vout2  
5V/div  
FLG2  
5V/div  
FLG2  
5V/div  
5ms/div  
5ms/div  
8 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics (cont.)  
C =100uF  
L
C =100uF  
L
R =10ꢀ  
L
R =10ꢀ  
L
T = +25°C  
A
T
= +25°C  
A
C =1µF  
L
R =10ꢀ  
L
T
= +25°C  
A
C =1µF  
L
R =10ꢀ  
L
T
= +25°C  
A
Vin=5.0V  
Vin=5.0V  
Vin=5.5V  
Vin=5.5V  
Vin=2.7V  
Vin=2.7V  
9 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Typical Performance Characteristics (cont.)  
Vin=3.3V  
Vin=3.3V  
Vin=5V  
C =1uF  
L
Vin=5V  
UVLO Rising  
UVLO Falling  
V
V
=5V  
IN  
=4V  
OUT  
C =1µF  
L
V
=5V  
IN  
T
= +25°C  
A
C =1µF  
L
T
= +25°C  
A
C =1µF  
L
10 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Application Information  
Power Supply Considerations  
A 0.1μF to 1μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic  
capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may  
cause ringing on the input. Additionally, bypassing the output with a 1μF ceramic capacitor improves the immunity of the device to short-circuit  
transients.  
Over-Current and Short Circuit Protection  
An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series  
resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output  
voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.  
Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN  
has been applied. The AP2142A/AP2152A senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT  
.
In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher inrush  
current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the  
device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then gradually  
turning it on. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and  
the current is clamped at ILIMIT. The threshold for activating current limiting is 0.7A typical per channel.  
In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the  
current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2142A/AP2152A is capable of delivering current  
up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting  
mode and is set at ILIMIT  
.
FLG Response  
When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms  
deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive  
load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout.  
The AP2142A/AP2152A is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses.  
Power Dissipation and Junction Temperature  
The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating  
ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by:  
PD = RDS(ON)× I2  
Finally, calculate the junction temperature:  
TJ = PD x RJA + TA  
Where:  
TA = Ambient temperature C  
RJA = Thermal resistance  
P
D = Total power dissipation  
Thermal Protection  
Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The  
AP2142A/AP2152A implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die  
temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense  
circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the  
device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input  
power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch.  
11 of 16  
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© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Application Information (cont.)  
Under-Voltage Lockout (UVLO)  
Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if  
the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of  
hot-insertion systems where it is not possible to turn off the power switch before input power is removed.  
Discharge Function  
The discharge function of the device is active when enable is disabled or de-asserted. The discharge function with the N-MOS power switch  
implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of  
the output voltage when either no external output resistance or load resistance is present at the output.  
Host/Self-Powered HUBs  
Hosts and self-powered hubs (SPH) have a local power supply that powers the embedded functions and the downstream ports. This power supply  
must provide from 5.25V to 4.75V to the board side of the downstream connection under both full-load and no-load conditions. Hosts and SPHs are  
required to have current-limit protection and must report over-current conditions to the USB controller. Typical SPHs are desktop PCs, monitors,  
printers, and stand-alone hubs.  
Generic Hot-Plug Applications  
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are considered hot-plug  
applications. Such implementations require the control of current surges seen by the main power supply and the card being inserted. The most  
effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a  
power supply normally turns on. Due to the controlled rise times and fall times of the AP2142A/AP2152A, these devices can be used to provide a  
softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2142A/AP2152A also ensures that the switch is off  
after the card has been removed, and that the switch is off during the next insertion.  
By placing the AP2142A/AP2152A between the VCC input and the rest of the circuitry, the input power reaches these devices first after insertion.  
The typical rise time of the switch is approximately 1ms, providing a slow voltage ramp at the output of the device. This implementation controls  
system surge current and provides a hot-plugging mechanism for any device.  
Ordering Information  
7”/13” Tape and Reel  
Part Number Suffix  
Package  
Code  
Part Number  
Packaging  
Quantity  
AP21X2ASG-13  
AP21X2AMPG-13  
AP21X2AFGEG-7  
S
SO-8  
250/Tape & Reel  
2500/Tape & Reel  
3000/Tape & Reel  
-13  
-13  
-7  
MP  
FGE  
MSOP-8EP  
U-DFN3030-8  
12 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Marking Information  
(1) SO-8  
( Top view )  
8
1
7
6
5
4
2 : 2 Channel  
YY : Year : 08, 09,10~  
WW : Week : 01~52; 52  
represents 52 and 53 week  
X : Internal Code  
Logo  
Part Number  
4 : Active Low  
5 : Active High  
AP21X X A  
YY WW X X  
G : Green  
2
3
(2) MSOP-8EP  
(3) U-DFN3030-8  
( Top View )  
XX : Identification Code  
Y : Year : 0~9  
X X  
W : Week : A~Z : 1~26 week;  
Y
X
W
a~z : 27~52 week; z represents  
52 and 53 week  
X : A~Z : Green  
Part Number  
Package  
Identification Code  
AP2142AFGEG-7  
AP2152AFGEG-7  
U-DFN3030-8  
U-DFN3030-8  
AA  
AB  
13 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Package Outline Dimensions (All dimensions in mm.)  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
(1) Package Type: SO-8  
SO-8  
Dim  
A
A1  
A2  
A3  
b
Min  
-
0.10  
1.30  
0.15  
0.3  
Max  
1.75  
0.20  
1.50  
0.25  
0.5  
E1  
E
Gauge Plane  
Seating Plane  
A1  
L
D
E
E1  
e
h
L
  
4.85  
5.90  
3.85  
1.27 Typ  
-
0.62  
0  
4.95  
6.10  
3.95  
Detail ‘A’  
7°~9°  
h
°
45  
0.35  
0.82  
8  
Detail ‘A’  
A2  
A3  
A
b
e
All Dimensions in mm  
D
(2) Package Type: MSOP-8EP  
MSOP-8EP  
Dim Min Max Typ  
D
A
A1  
A2  
A3  
b
-
1.10  
-
0.05 0.15 0.10  
0.75 0.95 0.86  
0.29 0.49 0.39  
0.22 0.38 0.30  
0.08 0.23 0.15  
2.90 3.10 3.00  
1.60 2.00 1.80  
4.70 5.10 4.90  
2.90 3.10 3.00  
1.30 1.70 1.50  
2.85 3.05 2.95  
D1  
x
c
D
E
E2  
Gauge Plane  
Seating Plane  
D1  
E
E1  
E2  
E3  
e
y
L
1
8Xb  
e
Detail C  
E3  
E1  
-
-
0.65  
A1  
A3  
c
L
0.40 0.80 0.60  
A2  
A
a
x
y
0°  
-
-
8°  
-
-
4°  
0.750  
0.750  
D
All Dimensions in mm  
See Detail C  
(3) Package Type: U-DFN3030-8  
U-DFN3030-8  
Type E  
Dim Min Max Typ  
A
A3  
A1  
A
A1  
A3  
b
0.57 0.63 0.60  
0
  
0.05 0.02  
0.15  
D
D2  
  
0.20 0.30 0.25  
2.95 3.05 3.00  
L (x8)  
D
D2 2.15 2.35 2.25  
E
e
2.95 3.05 3.00  
0.65  
E
E2  
  
  
E2 1.40 1.60 1.50  
L
Z
0.30 0.60 0.45  
0.40  
  
  
All Dimensions in mm  
Z (x4)  
e
b (x8)  
14 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
(1) Package Type: SO-8  
X
Dimensions Value (in mm)  
X
Y
C1  
C2  
0.60  
1.55  
5.4  
C1  
1.27  
C2  
Y
(2) Package Type: MSOP-8EP  
X
C
Y
Value  
(in mm)  
0.650  
0.450  
0.450  
2.000  
1.350  
1.700  
5.300  
G
Dimensions  
C
G
X
X1  
Y
Y1  
Y2  
Y2  
Y1  
X1  
(3) Package Type: U-DFN3030-8  
X (x8)  
C
Y
(x8)  
Dimensions  
Value (in mm)  
0.65  
C
C1  
X
2.35  
0.30  
Y
Y1  
Y2  
0.65  
1.60  
2.75  
Y1  
Y2  
C1  
15 of 16  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  
AP2142A/ AP2152A  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2013, Diodes Incorporated  
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March 2013  
© Diodes Incorporated  
AP2142A/ AP2152A  
Document number: DS32191 Rev. 3 - 2  

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