AP4310P-G1 [DIODES]

Analog Circuit, 2 Func, PDIP8, GREEN, DIP-8;
AP4310P-G1
型号: AP4310P-G1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Analog Circuit, 2 Func, PDIP8, GREEN, DIP-8

光电二极管
文件: 总11页 (文件大小:663K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
General Description  
Features  
The AP4310/A is a monolithic IC specifically Op Amp  
designed to regulate the output current and voltage lev-  
els of switching battery chargers and power supplies.  
·
·
Input Offset Voltage: 0.5mV  
Supply Current: 75µA per Op Amp at 5.0V Sup-  
ply Voltage  
The device contains two Op Amps and a 2.5V preci-  
sion shunt voltage reference. Op Amp 1 is designed for  
voltage control with its non-inverting input internally  
connected to the output of the shunt regulator. Op  
Amp 2 is for current control with both inputs uncom-  
mitted. The IC offers the power converter designer a  
control solution that features increased precision with a  
corresponding reduction in system complexity and  
cost. AP4310A has more strigent reference voltage  
tolerance than AP4310.  
·
·
Unity Gain Bandwidth: 1MHz  
Output Voltage Swing: 0 to (V -1.5) V  
CC  
·
Power Supply Range: 3 to 36V  
Voltage Reference  
·
·
Fixed Output Voltage Reference: 2.5V  
Reference Voltage Tolerance  
AP4310A: ± 0.4%,  
AP4310: ± 1%  
·
·
Sink Current Capability: 0.05 to 80mA  
Typical Output Impedance: 0.2Ω  
The AP4310/A is available in standard packages of  
DIP-8 and SOIC-8.  
Applications  
·
·
Battery Charger  
Switching Power Supply  
SOIC-8  
DIP-8  
Figure 1. Package Types of AP4310/A  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Pin Configuration  
M Package  
(SOIC-8)  
P Package  
(DIP-8)  
1
2
8
7
VCC  
OUTPUT 1  
INPUT 1-  
OUTPUT 1  
INPUT 1-  
VCC  
8
7
1
2
3
4
OUTPUT 2  
OUTPUT 2  
INPUT 2-  
INPUT 2+  
INPUT 1+/VKA  
INPUT 2-  
INPUT 2+  
3
4
6
5
6
5
INPUT 1+/VKA  
GND  
GND  
Figure 2. Pin Configuration of AP4310/A (Top View)  
Functional Block Diagram  
1
8
7
OUTPUT 1  
INPUT 1-  
V
CC  
Op  
Amp 1  
-
+
2
3
OUTPUT 2  
INPUT 2-  
INPUT 2+  
-
+
INPUT 1+ / V  
KA  
6
5
Op  
Amp 2  
GND  
4
Figure 3. Functional Block Diagram of AP4310/A  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Ordering Information  
AP4310  
-
G1: Green  
Circuit Type  
TR: Tape and Reel  
Blank: Tube  
Blank: AP4310  
A: AP4310A  
Package  
M: SOIC-8  
P: DIP-8  
Reference  
Voltage  
Voltage  
Tolerance  
Temperature  
Range  
Package  
Part Number  
Marking ID  
Packing Type  
± 0.4%  
± 1%  
AP4310AP-G1  
AP4310AP-G1  
AP4310P-G1  
-40 to 105oC  
-40 to 105oC  
-40 to 105oC  
DIP-8  
2.5V  
Tube  
AP4310P-G1  
AP4310AM-G1  
AP4310AMTR-G1  
AP4310M-G1  
AP4310AM-G1  
AP4310AM-G1  
AP4310M-G1  
AP4310M-G1  
Tube  
± 0.4%  
± 1%  
Tape & Reel  
Tube  
SOIC-8  
2.5V  
AP4310MTR-G1  
Tape & Reel  
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Power Supply Voltage (V to GND)  
V
40  
V
CC  
CC  
Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6)  
Op Amp 2 Input Differential Voltage (Pins 5, 6)  
Voltage Reference Cathode Current (Pin 3)  
V
-0.3 to V +0.3  
V
V
IN  
ID  
K
CC  
V
40  
I
100  
mA  
DIP-8  
SOIC-8  
800  
500  
o
P
mW  
Power Dissipation (T =25 C)  
D
A
o
Operating Junction Temperature  
Storage Temperature Range  
Lead Temperature (Soldering 10s)  
ESD (Human Body Model)  
T
150  
J
C
o
T
-65 to 150  
260  
STG  
C
o
T
LEAD  
C
ESD  
V
2000  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the  
device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-  
imum Ratings" for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Min  
3
Max  
36  
Unit  
Supply Voltage  
Ambient Temperature  
V
o
-40  
105  
C
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Electrical Characteristics  
Operating Conditions: VCC =+5V, TA=25oC unless otherwise specified.  
Parameter  
Conditions  
CC=5V, no load, -40oCTA105oC  
Min  
Typ  
Max  
Unit  
0.15  
0.25  
0.30  
V
Total Supply Current, excluding Cur-  
rent in Voltage Reference  
mA  
VCC=30V, no load, -40oCTA105oC  
0.20  
Voltage Reference Section  
TA=25oC  
2.49  
2.48  
2.50  
2.50  
2.50  
2.50  
2.51  
2.52  
AP4310A  
Reference Voltage  
V
-40oCTA105oC  
IK=10mA  
TA=25oC  
2.475  
2.45  
2.525  
2.55  
AP4310  
V
-40oCTA105oC  
Reference Voltage Deviation  
Over Full Temperature Range  
IK=10mA, TA=-40 to 105oC  
5
24  
mV  
Minimum Cathode Current  
for Regulation  
0.01  
0.2  
0.05  
0.5  
mA  
IK=1.0 to 80mA, f<1kHz  
Dynamic Impedance  
Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted)  
TA=25oC  
Input Offset Voltage  
3
5
0.5  
mV  
TA=-40 to 105oC  
Input Offset Voltage Temperature  
TA=-40 to 105oC  
Drift  
o
7
µV/ C  
Input Bias Current  
TA=25oC  
20  
150  
nA  
(Inverting Input Only)  
VCC=15V, RL=2k, VO=1.4 to 11.4V  
CC=5 to 30V  
VCC=15V, VID =1V, VO=2V  
CC=15V, VID=-1V, VO=2V  
VCC=30V, RL=10k, VID=1V  
CC=30V, RL =10k, VID=-1V  
VCC=18V, RL=2k, AV =1,  
Large Signal Voltage Gain  
85  
70  
20  
5
dB  
dB  
100  
90  
40  
20  
28  
17  
V
Power Supply Rejection Ratio  
Source  
Output Current  
mA  
mA  
V
V
Sink  
Output Voltage Swing (High)  
Output Voltage Swing (Low)  
27  
V
100  
mV  
Slew Rate  
0.2  
0.7  
0.5  
1.0  
V/µ s  
VIN=0.5 to 2V, CL =100pF  
VCC=30V, RL =2k, CL=100pF  
Unity Gain Bandwidth  
MHz  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Electrical Characteristics (Continued)  
Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified.  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Op Amp 2 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted)  
TA=25oC  
Input Offset Voltage  
0.5  
3
5
mV  
TA=-40 to 105oC  
Input Offset Voltage Temperature  
Drift  
TA=-40 to 105oC  
µV/oC  
7
TA=25oC  
Input Offset Current  
2
30  
nA  
TA=25oC  
Input Bias Current  
20  
150  
nA  
V
VCC=0 to 36V  
VCC-1.5  
Input Voltage Range  
0
TA=25oC, VCM =0 to 3.5V  
Common Mode Rejection Ratio  
Large Signal Voltage Gain  
Power Supply Rejection Ratio  
70  
85  
70  
20  
5
85  
100  
90  
dB  
dB  
dΒ  
mA  
mA  
V
VCC=15V, RL =2k, VO=1.4 to 11.4V  
V
V
V
V
V
CC=5 to 30V  
CC=15V, VID=1V, VO=2V  
CC=15V, VID=-1V, VO=2V  
CC=30V, RL =10k, VID=1V  
CC=30V, RL =10k, VID=-1V  
Source  
Output Current  
40  
Sink  
20  
28  
Output Voltage Swing (High)  
Output Voltage Swing (Low)  
27  
17  
100  
mV  
VCC=18V, RL=2k, AV=1,  
VIN =0.5 to 2V, CL =100pF  
Slew Rate  
0.2  
0.7  
V/µ s  
0.5  
1.0  
VCC=30V, RL=2k, CL=100pF  
Unity Gain Bandwidth  
MHz  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Typical Performance Characteristics  
2.510  
2.505  
2.500  
2.495  
2.490  
2.485  
150  
100  
50  
VKA=VREF  
TA=250C  
0
-50  
2.480  
-40  
-100  
-2  
-20  
0
20  
40  
60  
80  
100  
120  
-1  
0
1
2
3
Ambient Temperature (oC)  
Cathode Voltage (V)  
Figure 4. Reference Voltage vs. Ambient Temperature  
Figure 5. Cathode Current vs. Cathode Voltage  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
RL=2KΩ  
RL=20KΩ  
70  
0
-40  
60  
-20  
0
20  
40  
60  
80  
100  
120  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Ambient Temperature (oC)  
Supply Voltage (V)  
Figure 6. Input Bias Current vs. Ambient Temperature  
Figure 7. Op Amp Voltage Gain  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Typical Application  
R1  
R6  
Opto  
Isolator  
-
Op Amp 2  
Battery  
Pack  
AC  
Line  
SMPS  
+
R7  
R4  
R5  
R3  
Current  
Sense  
-
R2  
Op Amp 1  
+
R8  
AP4310  
Figure 8. Application of AP4310/A in a Constant Current and Constant Voltage Charger  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Mechanical Dimensions  
DIP-8  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
6°  
3.200(0.126)  
3.600(0.142)  
3.710(0.146)  
4.310(0.170)  
0.510(0.020)MIN  
3.000(0.118)  
3.600(0.142)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)TYP  
8.200(0.323)  
9.400(0.370)  
2.540(0.100) TYP  
0.130(0.005)MIN  
0.360(0.014)  
0.560(0.022)  
6.200(0.244)  
6.600(0.260)  
R0.750(0.030)  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
9.000(0.354)  
9.600(0.378)  
Note: Eject hole, oriented hole and mold mark is optional.  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
DUAL OP AMP AND VOLTAGE REFERENCE  
AP4310/A  
Mechanical Dimensions (Continued)  
SOIC-8  
Unit: mm(inch)  
4.700(0.185)  
0.320(0.013)  
1.350(0.053)  
5.100(0.201)  
1.750(0.069)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
0.190(0.007)  
0.250(0.010)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
)
06  
(0.0  
150  
R0.  
0.450(0.017)  
0.800(0.031)  
Note: Eject hole, oriented hole and mold mark is optional.  
Jan. 2013 Rev. 1. 8  
BCD Semiconductor Manufacturing Limited  
10  
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  

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