APD360VR-G1 [DIODES]

Rectifier Diode, Schottky, 1 Element, 3A, 60V V(RRM),;
APD360VR-G1
型号: APD360VR-G1
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, Schottky, 1 Element, 3A, 60V V(RRM),

CD
文件: 总8页 (文件大小:276K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Features  
Applications  
Low Forward Voltage Drop  
Very Small Conduction Losses  
High Surge Capability  
Low Voltage High Frequency Inverters  
DC-DC converters  
Free Wheeling  
Surge Overload Rating to 80A Peak  
Polarity Protection  
DO-27  
DO-214AC  
Figure 1. Package Type of APD360  
Pin Configuration  
VP Package  
(DO-27)  
VR Package  
DO-214AC  
Cathod  
Anode  
Cathod  
Anode  
Figure 2. Pin Configuration of APD360 (Top View)  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Ordering Information  
APD360  
-
E1: Lead Free  
G1: Green  
Circuit Type  
Blank: Bulk  
TR: Ammo  
Package  
VP: DO-27  
VR: DO-214AC  
Part Number  
Marking ID  
Lead  
Green  
Free  
Temperature  
Range  
Packing  
Type  
Package  
DO-27  
Lead Free  
Green  
APD360VP-E1  
APD360VP-G1  
D360VP  
D360VP  
D360VR  
D360VR  
360VPG  
360VPG  
360VRG  
360VRG  
Bulk  
Ammo  
Bulk  
-40 to 85°C  
-40 to 85°C  
APD360VPTR-E1 APD360VPTR-G1  
APD360VR-E1  
APD360VR-G1  
DO-214AC  
APD360VRTR-  
E1  
APD360VRTR-G1  
Ammo  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Products with “G1” suffix are available in green packages.  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Absolute Maximum Ratings (TA=25°C unless otherwise noted) (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Maximum repetitive peak reverse  
voltage  
VRRM  
60  
V
Maximum DC blocking voltage  
Maximum RMS voltage  
VDC  
60  
42  
V
V
VRMS  
Average rectified forward current  
0.375” (9.5mm)lead length  
Non-repetitive peak forward surge  
current 8.3ms single half sine-wave  
on rated load  
IF(AV)  
IFSM  
3.0  
80  
A
A
Operating junction temperature range  
Storage temperature range  
TJ  
-65 to 125  
-65 to 150  
°C  
°C  
TSTG  
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute  
Maximum Ratings” for extended periods may affect device reliability.  
Thermal Characteristics (TA=25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
40  
Unit  
DO-27  
DO-214AC  
Typical Thermal Resistance  
θJA  
°C/W  
75  
Electrical Characteristics (TA=25°C unless otherwise noted)  
Parameter  
Symbol  
Min  
Typ  
Max  
Units  
Forward voltage @ IF=3.0A  
VF  
0.68  
V
0.5  
10  
TA=25°C  
TA=100°C  
Reverse Current @  
rated VR (Note 2)  
IR  
mA  
Note 2: Pulse Test: 300µS pulse width, 1.0% duty cycle.  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Typical Performance Characteristics  
(TA=25°C unless otherwise noted)  
100  
10  
5
4
3
2
1
0
1
0.1  
250C  
1250C  
1500C  
0.01  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
nstantaneous Forward Voltage(V)  
Ambient Temperature  
Figure 3. Forward Current Derating Curve  
Figure 4. Typical Instantaneous Forward Characteristics  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100000  
10000  
1000  
250C  
1250C  
1500C  
100  
10  
1
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
NO of cycle at 60HZ  
Instantaneous Reverse Voltage(V)  
Figure 5. Maximum Non-Repetitive Surge Current  
Figure 6. Typical Reverse Characteristics  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Typical Performance Characteristics (Continued)  
400  
100  
10  
60  
1
10  
Reverse voltage  
Figure 7. Typical Junction Capacitance  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Mechanical Dimensions  
DO-27  
Unit: mm(inch)  
1.200(0.047)  
1.300(0.051)  
25.400(1.000) MIN  
DIA.  
8.500(0.375)  
9.500(0.335)  
5.000(0.197)  
5.600(0.220)  
DIA.  
25.400(1.000) MIN  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
SCHOTTKY BARRIER RECTIFIER  
APD360  
Mechanical Dimensions (Continued)  
DO-214AC  
Unit: mm(inch)  
3.990(0.157)  
4.500(0.177)  
0.152(0.006)  
0.305(0.012)  
1.980(0.078)  
2.290(0.090)  
0.100(0.004)  
0.200(0.008)  
0.760(0.030)  
1.520(0.060)  
4.910(0.194)  
5.280(0.208)  
Dec. 2009 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
7
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
o
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
518026, China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  

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