B1100B-7 [DIODES]
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN;
| 型号： | B1100B-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: B170 B180 B190 B1100
B170B B180B B190B B1100B
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
·
·
·
·
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
SMA
Min
SMB
Min
B
Dim
A
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
A
J
C
D
B
C
·
·
D
E
G
H
Mechanical Data
G
H
J
E
All Dimensions in mm
·
·
Case: SMA / SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
·
·
·
·
·
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
B170/B
70
B180/B
80
B190/B
90
B1100/B
100
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
VR(RMS)
IO
RMS Reverse Voltage
49
56
63
70
V
A
Average Rectified Output Current
@ TT = 125°C
1.0
30
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
A
Forward Voltage @ IF = 1.0A
@ TA
@ TA = 100°C
@ TA 25°C
@ TA = 100°C
= 25°C
0.79
0.69
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
=
0.5
5.0
mA
Cj
Typical Junction Capacitance (Note 2)
80
25
pF
K/W
°C
RqJT
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30018 Rev. B-2
1 of 2
B170/B - B1100/B
10
1.0
1.0
0.5
0.1
0
0.01
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
TT, TERMINAL TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
1000
100
10
40
30
Tj = 25°C
Single Half Sine-Wave
(JEDEC Method)
f = 1.0MHz
20
10
0
Tj = 150°C
0.1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
DS30018 Rev. B-2
2 of 2
B170/B - B1100/B
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