B130LB-7-F [DIODES]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, PLASTIC, SMB, 2 PIN;
B130LB-7-F
型号: B130LB-7-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon, PLASTIC, SMB, 2 PIN

功效 瞄准线 光电二极管
文件: 总2页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
B130LB  
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
SPICE MODEL: B130LB  
Features  
·
·
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
·
·
·
·
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
Surge Overload Rating to 40A Peak  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Application  
High Temperature Soldering:  
260°C/10 Second at Terminal  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
B
SMB  
Min  
Dim  
A
Max  
3.94  
4.57  
2.21  
0.31  
5.59  
0.20  
1.27  
2.62  
3.30  
4.06  
1.96  
0.15  
5.00  
0.10  
0.76  
2.00  
A
J
C
D
B
·
·
C
D
E
G
H
Mechanical Data  
·
G
H
J
Case: SMB, Molded Plastic  
Terminals: Solder Plated Terminal -  
Solderable per MIL-STD-202, Method 208  
E
·
All Dimensions in mm  
·
·
·
Polarity: Cathode Band or Cathode Notch  
Weight: 0.093 grams (approx.)  
Marking: B13LB  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
B130LB  
30  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
RMS Reverse Voltage  
21  
V
A
Average Rectified Output Current  
@ TT = 120°C  
@ TT = 110°C  
1.0  
2.0  
IO  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
40  
A
Forward Voltage  
@ IF = 1.0A  
@ IF = 2.0A  
0.395  
0.445  
VFM  
IRM  
V
1.0  
20  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA = 25°C  
@ TA = 100°C  
mA  
Cj  
Typical Junction Capacitance (Note 1)  
90  
12  
pF  
K/W  
°C  
RqJT  
Typical Thermal Resistance Junction to Terminal  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +125  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30043 Rev. C-2  
1 of 2  
www.diodes.com  
B130LB  
ã Diodes Incorporated  
5
4
10  
Tj = 125°C  
3
2
Tj = 25°C  
1.0  
1
0
Tj = 125°C  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
25  
50  
75  
100  
125  
150  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
1000  
50  
Single Half-Sine-Wave  
(JEDEC Method)  
f = 1.0MHz  
Tj = 25°C  
40  
30  
100  
20  
10  
0
10  
0.1  
1
10  
100  
1
10  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
100  
VR, REVERSE VOLTAGE (V)  
Fig. 4 Typical Junction Capacitance  
100  
Tj = 100°C  
10  
1.0  
Tj = 25°C  
0.1  
0.01  
0
5
10  
15  
20  
25  
30  
35  
VR, RATED PEAK REVERSE VOLTAGE (V)  
Fig. 5 Typical Reverse Characteristics  
DS30043 Rev. C-2  
2 of 2  
B130LB  
www.diodes.com  

相关型号:

B130LBT-01-13

Rectifier Diode, SMB, 2 PIN
DIODES

B130LB_1

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

B130LB_10

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

B130L_09

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

B130L_1

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DIODES

B130NH02L

N-CHANNEL 24V - 0.0034 з - 120A DPAK/TO-220 STripFET⑩ III POWER MOSFET FOR DC-DC CONVERSION
STMICROELECTR

B130SL

LOW VF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
PACELEADER

B130W-30

Surface Mount Schottky Barrier Diodes
WEITRON

B1310

KEILRIEMEN V TYP B WIRKLAENGE 1310MM
ETC

B1312BA1

FEMALE HEADER PROFILE : 4.5mm STRAIGHT
DBLECTRO

B1312BB1

FEMALE HEADER PROFILE : 4.5mm STRAIGHT
DBLECTRO

B1312BC1

FEMALE HEADER PROFILE : 4.5mm STRAIGHT
DBLECTRO