B530C-7 [DIODES]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, PLASTIC, SMC, 2 PIN;
| 型号： | B530C-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, PLASTIC, SMC, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B520C - B560C
5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SPICE MODELS: B520C B530C B540C B550C B560C
Features
·
Guard Ring Die Construction for Transient
Protection
·
·
·
·
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 175A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
SMC
Min
B
Dim
A
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
A
J
C
D
B
·
Plastic Material - UL Flammability
Classification 94V-0
C
D
E
Mechanical Data
G
H
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal
Solderable per MIL-STD-202, Method 208
G
J
H
E
All Dimensions in mm
·
·
·
Polarity: Cathode Band or Cathode Notch
Approx. Weight: 0.21grams
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol B520C
B530C
30
B540C
B550C
50
B560C
60
Unit
VRRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
20
40
V
VR
VR(RMS)
14
RMS Reverse Voltage
21
28
35
42
V
A
Average Rectified Output Current
@ TT = 90°C
IO
5.0
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave Superimposed on Rated Load
(JEDEC method)
IFSM
175
A
Forward Voltage
@ IF = 5.0A DC
VFM
IRM
0.55
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TA 25°C
=
0.5
20
mA
@ TA = 100°C
Cj
Typical Junction Capacitance (Note 2)
300
10
pF
K/W
°C/W
°C
RqJT
RqJA
Tj
Typical Thermal Resistance, Junction to Terminal (Note 1)
Typical Thermal Resistance, Junction to Ambient
Operating Temperature Range
50
-55 to +125
-55 to +150
TSTG
Storage Temperature Range
°C
Notes:
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS13012 Rev. C-2
1 of 2
B520C-B560C
www.diodes.com
ã Diodes Incorporated
100
10
5.0
4.0
B520C - B540C
3.0
2.0
B550C - B560C
1.0
0.1
1.0
0
Tj = 25ºC
IF Pulse Width = 300 ms
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TT, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
175
140
1000
Single Half-Sine-Wave
(JEDEC Method)
Tj = 25°C
105
100
70
35
0
10
0.1
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
10
Tj = 125°C
Tj = 100°C
1.0
0.1
0.01
0.001
Tj = 25°C
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS13012 Rev. C-2
2 of 2
B520C-B560C
www.diodes.com
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