BAS19W [DIODES]
SURFACE MOUNT FAST SWITCHING DIODE; 表面装载快速开关二极管型号: | BAS19W |
厂家: | DIODES INCORPORATED |
描述: | SURFACE MOUNT FAST SWITCHING DIODE |
文件: | 总3页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS19W - BAS21W
SURFACE MOUNT FAST SWITCHING DIODE
Features
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
A
SOT-323
Dim
A
B
C
D
E
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
·
·
C
B
G
H
Mechanical Data
0.65 Nominal
·
·
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
K
J
M
G
H
J
L
D
F
·
·
K
L
0.90
0.25
0.10
0°
·
·
·
·
·
Terminal Connections: See Diagram
BAS19W Marking: KA8 or KT2 or KT3 (See Page 3)
BAS20W Marking: KT2 or KT3 (See Page 3)
BAS21W Marking: KT3 (See Page 3)
Weight: 0.006 grams (approx.)
M
a
TOP VIEW
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
BAS19W
BAS20W
BAS21W
Unit
VRRM
Repetitive Peak Reverse Voltage
120
200
250
V
VRWM
VR
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
71
150
200
141
VR(RMS)
IFM
RMS Reverse Voltage
106
400
200
V
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
mA
mA
IO
2.5
0.5
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
IFSM
A
@ t = 1.0s
IFRM
Pd
Repetitive Peak Forward Surge Current
Power Dissipation
625
200
mA
mW
°C/W
°C
RqJA
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
625
Tj , TSTG
-65 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Test Condition
¾
¾
¾
Reverse Breakdown Voltage (Note 2)
BAS19W
BAS20W
BAS21W
120
200
250
V(BR)R
I
R = 100mA
V
1.0
1.25
IF = 100mA
IF = 200mA
VF
Forward Voltage (Note 2)
V
¾
Tj = 25°C
Tj = 100°C
nA
Reverse Current
100
15
IR
CT
trr
¾
¾
¾
@ Rated DC Blocking Voltage (Note 2)
mA
V
R = 0, f = 1.0MHz
Total Capacitance
5.0
50
pF
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
ns
Notes:
1. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on our website at
http:/www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30118 Rev. 6 - 2
1 of 3
BAS19W - BAS21W
www.diodes.com
100
10
1
TA = 150ºC
TA = 125ºC
TA = 75ºC
TA = 25ºC
1
0.1
0.1
0.01
TA = -40ºC
TA = 0ºC
TA = 0ºC
0.01
TA = 25ºC
TA = 75ºC
TA = -40ºC
0.001
TA = 125ºC
TA = 150ºC
0.0001
0.001
150
200
0
50
100
250
0.2
0.4
0.8
1.0
0. 6
1.2
1.4
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
4.0
3.5
3.0
250
200
150
100
f = 1.0MHz
2.5
2.0
1.5
1.0
0.5
0.0
50
0
10
0
30
40
20
0
100
200
TA, AMBIENT TEMPERATURE (°C)
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance vs. Reverse Voltage
Fig. 4 Power Derating Curve, Total Package
DS30118 Rev. 6 - 2
2 of 3
www.diodes.com
BAS19W - BAS21W
(Note 3)
Ordering Information
Device
Packaging
SOT-323
SOT-323
SOT-323
Shipping
BAS19W-7
BAS20W-7
BAS21W-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code (See Page 1 Diagrams)
YM = Date Code Marking
Y = Year ex: N = 2002
XXX
M = Month ex: 9 = September
Date Code Key
Year
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30118 Rev. 6 - 2
3 of 3
BAS19W - BAS21W
www.diodes.com
相关型号:
BAS19W-T1-LF
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
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