BAS70T-05-13 [DIODES]

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon;
BAS70T-05-13
型号: BAS70T-05-13
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon

文件: 总2页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS70T/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
Low Turn-on Voltage  
SOT-523  
Fast Switching  
TOP VIEW  
Dim Min Max Typ  
PN Junction Guard Ring for Transient and  
ESD Protection  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
·
Ultra-Small Surface Mount Package  
B
C
Mechanical Data  
¾
¾
0.50  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
·
Case: SOT-523, Molded Plastic  
A
G
H
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
·
·
·
·
Polarity: See Diagram  
Marking: See Diagram  
K
J
M
N
M
N
Weight: 0.002 grams (approx.)  
Ordering Information, see Sheet 2  
D
L
All Dimensions in mm  
BAS70T-06 Marking: 7F  
BAS70T-04 Marking: 7D  
BAS70T-05 Marking: 7E  
BAS70T Marking: 7C  
Maximum Ratings and Electrical Characteristics, Single Diode@ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
BAS70T  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IF  
IFSM  
Pd  
RMS Reverse Voltage  
49  
70  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current  
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s  
Power Dissipation (Note 1)  
100  
150  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
833  
-55 to +125  
-65 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Ratings  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
Forward Voltage (Note 2)  
70  
IR = 10mA  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
VFM  
mV  
IRM  
Cj  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
Leakage Current (Note 2)  
Junction Capacitance  
¾
¾
100  
2.0  
nA  
pF  
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30261 Rev. B-2  
1 of 2  
BAS70T/ -04/ -05/ -06  
(Note 3)  
Ordering Information  
Device  
Packaging  
SOT-523  
SOT-523  
SOT-523  
SOT-523  
Shipping  
BAS70T-7  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
BAS70T-04-7  
BAS70T-05-7  
BAS70T-06-7  
Notes:  
3. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
DS30261 Rev. B-2  
2 of 2  
BAS70T/ -04/ -05/ -06  

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