BAS70W [DIODES]

SURFACE MOUNT SCHOTTKY BARRIER DIODE; 表面贴装肖特基二极管
BAS70W
型号: BAS70W
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

SURFACE MOUNT SCHOTTKY BARRIER DIODE
表面贴装肖特基二极管

肖特基二极管
文件: 总1页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS70W/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
Low Turn-on Voltage  
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
SOT-323  
Dim  
A
Min  
0.30  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
A
·
Ultra-Small Surface Mount Package  
B
TOP VIEW  
C
B
C
Mechanical Data  
D
0.65 Nominal  
·
·
Case: SOT-323, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagrams  
Marking: See Diagrams  
Mounting Position: Any  
Approx. Weight: 0.006 grams  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.25  
D
E
G
H
G
H
·
·
·
·
J
M
K
K
0.90  
0.25  
0.10  
J
L
L
M
All Dimensions in mm  
BAS70W-06 Marking: K76  
BAS70W-04 Marking: K74  
BAS70W-05 Marking: K75  
BAS70W Marking: K73  
Maximum Ratings and Electrical Characteristics, Single Diode @ T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
BAS70W  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
70  
V
VR(RMS)  
IF  
RMS Reverse Voltage  
49  
70  
V
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ tp < 1.0s  
Power Dissipation (Note 1)  
mA  
mA  
mW  
K/W  
°C  
IFSM  
Pd  
100  
200  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
625  
-55 to +125  
-65 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Ratings  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
70  
tp <300µs, IF = 1.0mA  
tp <300µs, IF = 15mA  
410  
1000  
VFM  
Forward Voltage  
mV  
IRM  
Cj  
tp < 300µs, VR = 50V  
VR = 0V, f = 1.0MHz  
Peak Reverse Current  
Junction Capacitance  
¾
¾
100  
2.0  
nA  
pF  
IF = IR = 10mA to IR = 1.0mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Notes:  
1. Valid provided that terminals are kept at ambient temperature.  
2. Test period <3000ms.  
DS30113 Rev. A-2  
1 of 1  
BAS70W/ -04/ -05/ -06  

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