BAV170T-13 [DIODES]

Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
BAV170T-13
型号: BAV170T-13
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-3

文件: 总3页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODELS: BAS116T BAW156T BAV170T BAV199T  
BAS116T, BAW156T,  
BAV170T, BAV199T  
SURFACE MOUNT LOW LEAKAGE DIODE  
Features  
·
·
·
Ultra-Small Surface Mount Package  
SOT-523  
A
Very Low Leakage Current  
Dim Min Max Typ  
Available in Lead Free/RoHS Compliant Version  
(Note 2)  
C
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
B
TOP VIEW  
Mechanical Data  
E
B
¾
¾
0.50  
·
·
Case: SOT-523  
G
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
H
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
J
M
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
N
Terminals: Solderable per MIL-STD-202, Method 208  
K
L
L
D
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See Ordering  
Information, Note 5, on Page 3  
M
N
a
·
·
·
·
Polarity: See Diagrams Below  
0°  
8°  
¾
Marking: See Diagrams Below & Page 3  
Weight: 0.002 grams (approx.)  
All Dimensions in mm  
Ordering Information: See Page 3  
BAV199T Marking: 52  
BAW156T Marking: 53  
BAV170T Marking: 51  
BAS116T Marking: 50  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
85  
VR(RMS)  
RMS Reverse Voltage  
60  
V
Forward Continuous Current (Note 1)  
Single Diode  
Double Diode  
215  
125  
IFM  
mA  
mA  
IFRM  
Repetitive Peak Forward Current  
500  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
Power Dissipation (Note 1)  
150  
833  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30258 Rev. 7 - 2  
1 of 3  
BAS116T, BAW156T, BAV170T, BAV199T  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IR = 100mA  
V(BR)R  
Reverse Breakdown Voltage (Note 3)  
85  
¾
¾
V
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.90  
1.0  
VF  
Forward Voltage (Note 3)  
¾
¾
V
1.1  
1.25  
V
R = 75V  
5.0  
80  
nA  
nA  
IR  
CT  
trr  
Leakage Current (Note 3)  
Total Capacitance  
¾
¾
¾
¾
2
VR = 75V, Tj = 150°C  
VR = 0, f = 1.0MHz  
¾
pF  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
¾
3.0  
ms  
Notes:  
3. Short duration test pulse used to minimize self-heating effect.  
1000  
250  
200  
150  
100  
10  
100  
50  
0
1.0  
0.1  
0.01  
0
25  
50  
75  
100  
125  
150  
0
1
2
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Power Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
10  
160  
VR = 75V  
140  
120  
IF = 1mA  
100  
80  
60  
40  
20  
0
IF = 150mA  
1
IF = 10mA  
IF = 50mA  
0.1  
0
50  
100  
150  
200  
0.00  
0.60  
1.40  
0.40  
0.80  
1.00  
1.20  
0.20  
TA, AMBIENT TEMPERATURE (°C)  
VF(AVE), AVERAGE FORWARD VOLTAGE (V)  
Fig. 3 Typical Reverse Characteristics  
Fig. 4 Typical Forward Voltage vs Ambient Temperature  
DS30258 Rev. 7 - 2  
2 of 3  
www.diodes.com  
BAS116T, BAW156T, BAV170T, BAV199T  
(Note 4)  
Ordering Information  
Device  
Packaging  
SOT-523  
SOT-523  
SOT-523  
SOT-523  
Shipping  
BAS116T-7  
BAW156T-7  
BAV170T-7  
BAV199T-7  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Notes:  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BAV199T-7-F.  
Marking Information  
XX = Product Type Marking Code (See Page 1, e.g. 50 = BAS116T)  
YM = Date Code Marking  
Y = Year (ex: N = 2002)  
XXYM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30258 Rev. 7 - 2  
3 of 3  
BAS116T, BAW156T, BAV170T, BAV199T  
www.diodes.com  

相关型号:

BAV170T-7

SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170T-7-F

SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170T/R

DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
NXP

BAV170VL

DIODE ARRAY GP 85V 125MA SOT23
ETC

BAV170W

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
PANJIT

BAV170W_16

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT

BAV170W_R1_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT

BAV170W_R2_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE
PANJIT

BAV170_03

Low-leakage double diode
DIODES

BAV170_07

Silicon Low Leakage Diode Array
INFINEON

BAV170_0805

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV170_1

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES