BAV199 [DIODES]

DUAL SURFACE MOUNT LOW LEAKAGE DIODE; 双表面安装低漏电二极管
BAV199
型号: BAV199
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
双表面安装低漏电二极管

整流二极管
文件: 总2页 (文件大小:157K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV199  
DUAL SURFACE MOUNT LOW LEAKAGE DIODE  
Features  
·
Surface Mount Package Ideally Suited for  
SOT-23  
Automatic Insertion  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
·
Very Low Leakage Current  
A
Mechanical Data  
B
C
·
·
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: K52 & Date Code (See Page 2)  
Weight: 0.008 grams (approx.)  
TOP VIEW  
D
E
G
H
G
H
J
K
M
J
·
·
·
L
K
L
D
M
a
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
BAV199  
85  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
RMS Reverse Voltage  
60  
V
Forward Continuous Current (Note 2)  
Single diode  
Double diode  
160  
140  
IFM  
mA  
mA  
IFRM  
Repetitive Peak Forward Current (Note 2)  
500  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
Power Dissipation (Note 2)  
250  
500  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 1)  
IR = 100mA  
85  
¾
¾
V
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.90  
1.0  
VF  
Forward Voltage (Note 1)  
¾
¾
V
1.1  
1.25  
VR = 75V  
5.0  
80  
nA  
nA  
IR  
CT  
trr  
Leakage Current (Note 1)  
Total Capacitance  
¾
¾
¾
¾
2
VR = 75V, Tj = 150°C  
VR = 0, f = 1.0MHz  
¾
pF  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
¾
3.0  
ms  
Notes:  
1. Short duration test pulse to minimize self-heating effect.  
2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30232 Rev. 3 - 2  
1 of 2  
BAV199  
300  
300  
Device mounted on an  
FR4 printed-circuit board  
250  
250  
200  
200  
150  
150  
Single diode loaded  
100  
100  
50  
0
50  
Double diode loaded  
0
0
50  
100  
150  
200  
0
25  
50  
75  
100  
125  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 2 Current Derating Curve  
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 1 Power Derating Curve  
1000  
100  
10  
10  
V
R
= 75V  
1
1.0  
0.1  
0.1  
0.01  
0
50  
0
1
2
100  
150  
200  
T , AMBIENT TEMPERATURE (°C)  
A
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Fig. 3 Typical Forward Characteristics  
Fig. 4 Typical Reverse Characteristics  
(Note 3)  
Ordering Information  
Device  
Packaging  
SOT-23  
Shipping  
BAV199-7  
3000/Tape & Reel  
Notes:  
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K52 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K52  
M = Month ex: 9 = September  
Date Code Key  
Year  
2001  
2002  
2003  
2004  
2005  
Code  
M
N
P
R
S
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30232 Rev. 3 - 2  
2 of 2  
BAV199  

相关型号:

BAV199,215

BAV199 - Low-leakage double diode TO-236 3-Pin
NXP

BAV199,235

BAV199 - Low-leakage double diode TO-236 3-Pin
NXP

BAV199-13

Rectifier Diode, 2 Element, 0.16A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
DIODES

BAV199-13-F

Rectifier Diode, 2 Element, 0.16A, 85V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3
DIODES

BAV199-7

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV199-7-F

DUAL SURFACE MOUNT LOW LEAKAGE DIODE
DIODES

BAV199-AU

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
PANJIT

BAV199-Q

Low-leakage double diodeProduction
NEXPERIA

BAV199-T

Rectifier Diode
MCC

BAV199-T

DIODE 0.16 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
NXP

BAV199-T1

Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
WTE

BAV199-T1-LF

Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE