首页 |元器件品牌

BAV99DW-13 [DIODES]

Rectifier Diode, 4 Element, 0.215A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6;
BAV99DW-13
型号： BAV99DW-13
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Rectifier Diode, 4 Element, 0.215A, 75V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

光电二极管
文件： 总3页 (文件大小：75K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SPICE MODEL: BAV99DW  
BAV99DW  
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY  
Features  
·
·
·
·
·
·
Fast Switching Speed  
SOT-363  
Ultra-Small Surface Mount Package  
For General Purpose Switching Applications  
High Conductance  
A
Dim  
A
B
C
D
E
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
C
B
Two “BAV99” Circuits In One Package  
Available in Lead Free/RoHS Compliant Version (Note 4)  
G
H
0.65 Nominal  
Mechanical Data  
·
0.30  
1.80  
1.80  
¾
0.40  
2.20  
2.20  
0.10  
1.00  
0.40  
0.25  
8°  
Case: SOT-363  
K
J
M
G
H
J
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
D
F
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
AC  
1
C2  
A2  
Terminals: Solderable per MIL-STD-202, Method 208  
K
L
0.90  
0.25  
0.10  
0°  
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See Ordering  
Information, Note 6, on Page 3  
M
a
AC  
2
A1  
C1  
·
·
·
Polarity: See Diagram  
TOP VIEW  
All Dimensions in mm  
Marking: KJG (See Page 3)  
Weight: 0.006 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
75  
VR(RMS)  
IFM  
RMS Reverse Voltage  
53  
V
Forward Continuous Current (Note 1)  
215  
mA  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
2.0  
1.0  
0.5  
IFSM  
A
@ t = 1.0ms  
@ t = 1.0s  
Pd  
RqJA  
Power Dissipation (Note 1)  
200  
625  
mW  
°C/W  
mW  
°C/W  
°C  
Thermal Resistance Junction to Ambient Air (Note 1)  
Power Dissipation (Note 2)  
Pd  
300  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
417  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
¾
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 3)  
IR = 2.5mA  
75  
V
0.715  
0.855  
1.0  
IF = 1.0mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
VF  
Forward Voltage (Note 3)  
Reverse Current (Note 3)  
¾
¾
V
1.25  
V
R = 75V  
2.5  
50  
30  
25  
mA  
mA  
mA  
nA  
VR = 75V, Tj = 150°C  
VR = 25V, Tj = 150°C  
VR = 20V  
IR  
VR = 0, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
2.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration test pulse used to minimize self-heating effect.  
4. No purposefully added lead.  
DS30145 Rev. 6 - 2  
1 of 3  
BAV99DW  
www.diodes.com  
ã Diodes Incorporated  
1
10000  
1000  
100  
TA = 150ºC  
TA = 125ºC  
0.1  
TA = 150ºC  
TA = 75ºC  
TA = 75ºC  
TA = 25ºC  
TA = 25ºC  
TA = 0ºC  
10  
1
TA = -40ºC  
TA = 0ºC  
0.01  
TA = -40ºC  
0.1  
0.001  
20  
40  
60  
80  
100  
0
0.5  
1.0  
1.5  
0
VR, INSTANTANEOUS REVERSE VOLTAGE (V)  
Fig. 2 Typical Reverse Characteristics  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 1 Forward Characteristics  
2.0  
1.8  
300  
250  
200  
150  
100  
50  
f = 1.0MHz  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
10  
0
30  
40  
20  
0
25  
50  
75  
100  
125  
150  
VR, REVERSE VOLTAGE (V)  
Fig. 3 Typical Capacitance vs. Reverse Voltage  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 4 Power Derating Curve  
DS30145 Rev. 6 - 2  
2 of 3  
www.diodes.com  
BAV99DW  
Ordering Information (Note 5 & 6)  
Device  
Packaging  
Shipping  
BAV99DW-7  
SOT-363  
3000/Tape & Reel  
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BAV99DW-7-F.  
Marking Information  
KJG = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
KJG YM  
Y M K J G  
M = Month ex: 9 = September  
Date Code Key  
Year  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30145 Rev. 6 - 2  
3 of 3  
www.diodes.com  
BAV99DW  

相关型号：

BAV99DW-13-F

 Rectifier Diode, 4 Element, 0.215A, 75V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-6
DIODES

BAV99DW-7

 QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
DIODES

BAV99DW-7-F

 QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
DIODES

BAV99DW-T

 Rectifier Diode,
MCC

BAV99DW-T1

 Rectifier Diode, 4 Element, 0.215A, 75V V(RRM), Silicon, PLASTIC PACKAGE-6
WTE

BAV99DW-T1-LF

 Rectifier Diode, 4 Element, 0.215A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
WTE

BAV99DW-TP

 200mW 75Volt Plastic-Encapsulate Diode
MCC

BAV99DW-TP-HF

 暂无描述
MCC

BAV99DWP

 DIODE 0.15 A, 4 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-6, Signal Diode
MCC

BAV99DWQ

 SURFACE MOUNT SWITCHING DIODE ARRAY
DIODES

BAV99DWQ-7-F

 SURFACE MOUNT SWITCHING DIODE ARRAY
DIODES

BAV99DWS

 Multiple Terminals SMD Switching Diode
TAITRON
©2020 ICPDF网 联系我们和版权申明