BAW56 [DIODES]
DUAL SURFACE MOUNT SWITCHING DIODE; 双表面贴装开关二极管
| 型号： | BAW56 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL SURFACE MOUNT SWITCHING DIODE |
| 文件： | 总2页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW56
DUAL SURFACE MOUNT SWITCHING DIODE
Features
• Fast Switching Speed
SOT-23
• Surface Mount Package Ideally Suited for
Dim
A
B
C
D
E
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.85
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.80
8°
Automatic Insertion
A
• For General Purpose Switching Applications
• High Conductance
B
C
Mechanical Data
TOP VIEW
D
• Case: SOT-23, Molded Plastic
• Case material - UL Flammability Rating
Classification 94V-0
• Moisture sensitivity: Level 1 per J-STD-020A
• Terminals: Solderable per MIL-STD-202,
Method 208
• Polarity: See Diagram
• Marking: KJD (See Page 2)
• Weight: 0.008 grams (approx.)
E
G
H
G
H
J
K
M
J
L
K
L
D
M
a
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
BAW56
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
75
VR(RMS)
IFM
IFSM
Pd
RMS Reverse Voltage
53
V
Forward Continuous Current (Note 1)
300
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
2.0
1.0
A
@ t = 1.0s
Power Dissipation (Note 1)
350
357
mW
°C/W
°C
R
qJA
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150
@ T = 25°C unless otherwise specified
Electrical Characteristics
A
Characteristic
Symbol
Min
Max
Unit
Test Condition
IF = 1.0mA
0.715
0.855
1.0
IF = 10mA
IF = 50mA
IF = 150mA
VF
Forward Voltage (Note 2)
Reverse Current (Note 2)
¾
V
1.25
VR = 75V|
2.5
50
30
25
mA
mA
mA
nA
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
IR
¾
VR = 0, f = 1.0MHz
CT
trr
Total Capacitance
¾
¾
2.0
4.0
pF
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Reverse Recovery Time
Notes:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS12008 Rev. 9 - 2
1 of 2
BAW56
1000
100
10
10,000
1000
100
1.0
10
0.1
V
= 20V
R
0.01
1
0
100
T, JUNCTION TEMPERATURE (°C)
200
0
1
2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
j
Fig. 2 Leakage Current vs Junction Temperature
Fig. 1 Forward Characteristics
500
400
300
200
100
0
100
0
200
T , AMBIENT TEMPERATURE, (°C)
A
Fig. 3 Power Derating Curve, total package
(Note 3)
Ordering Information
Device
Packaging
Shipping
BAW56-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KJD = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
KJD
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS12008 Rev. 9 - 2
2 of 2
BAW56
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