BC846AW [DIODES]
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR; NPN表面贴装小信号晶体管
| 型号： | BC846AW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846AW - BC848CW
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
Ideally Suited for Automatic Insertion
SOT-323
Complementary PNP Types Available
(BC856W-BC858W)
A
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
·
For Switching and AF Amplifier Applications
B
Mechanical Data
C
B
C
·
·
Case: SOT-323, Molded Plastic
D
0.65 Nominal
B
E
Case material - UL Flammability Rating
Classification 94V-0
G
H
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
·
·
Moisture sensitivity: Level 1 perJ-STD-020A
K
J
Terminals: Solderable per MIL-STD-202,
Method 208
M
J
K
0.90
0.25
0.10
0°
·
·
Pin Connections: See Diagram
L
D
F
L
Marking Codes (See Table Below & Diagram
on Page 2)
M
·
·
Ordering & Date Code Information: See Page 2
Approx. Weight: 0.006 grams
a
All Dimensions in mm
Marking Code (Note 2)
Type
Marking
K1Q
Type
Marking
K1M
BC846AW
BC846BW
BC847AW
BC847BW
BC847CW
BC848AW
BC848BW
BC848CW
K1R
K1J, K1E, K1Q
K1K, K1F, K1R
K1L, K1M
K1E, K1Q
K1F, K1R
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
80
50
30
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC846
BC847
BC848
VCBO
V
65
45
30
BC846
BC847
BC848
VCEO
V
V
6.0
5.0
BC846, BC847
BC848
VEBO
IC
ICM
Collector Current
100
200
mA
mA
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
IEM
200
mA
Pd
200
mW
°C/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
-65 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC846W.
DS30250 Rev. 3 - 2
1 of 2
BC846AW - BC848CW
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 3)
BC846
BC847
BC848
80
50
30
—
—
—
—
—
—
V(BR)CBO
V
Collector-Emitter Breakdown Voltage (Note 3) BC846
BC847
BC848
65
45
30
—
—
—
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
V(BR)EBO
hFE
V
V
Emitter-Base Breakdown Voltage
(Note 3)
BC846, BC847
BC848
6
5
IE = 1mA, IC = 0
—
—
DC Current Gain
Current Gain Group A
B
110
200
420
180
290
520
220
450
800
—
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
(Note 3)
C
90
200
250
600
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
mV
mV
mV
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
700
900
—
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
580
—
660
—
700
770
VCB = 30V
VCB = 30V, TA = 150°C
ICBO
ICBO
—
—
—
—
15
5.0
nA
µA
Collector-Cutoff Current (Note 3)
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Gain Bandwidth Product
100
—
300
3.0
—
MHz
pF
VCB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
4.5
VCE = 5V, IC = 200µA,
RS = 2.0kW,
f = 1.0kHz, Df = 200Hz
Noise Figure
NF
—
—
10
dB
(Note 4)
Ordering Information
Device
Packaging
Shipping
BC84xxW-7*
SOT-323
3000/Tape & Reel
Notes: 3. Short duration pulse test to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC846AW-7.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K1Q = BC846AW
YM = Date Code Marking
Y = Year ex: N = 2002
XXX
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30250 Rev. 3 - 2
2 of 2
BC846AW - BC848CW
相关型号：
BC846AW-13
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
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