BC847A-13 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3;
| 型号： | BC847A-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846A - BC848C
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
SPICE MODEL: BC846A BC846B BC846C BC847A BC847B
BC847C BC848A BC848B BC848C
Features
·
·
·
·
Ideally Suited for Automatic Insertion
SOT-23
Complementary PNP Types Available (BC856-BC858)
For Switching and AF Amplifier Applications
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
C
Available in Lead Free/RoHS Compliant Version
(Note 3)
B
B
C
C
Mechanical Data
TOP VIEW
E
B
D
D
G
E
·
·
Case: SOT-23
E
Case material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
G
H
K
M
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C
J
J
L
Terminals: Solderable per MIL-STD-202, Method 208
K
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 6, on Page 4
L
C
M
·
·
Pin Connections: See Diagram
a
Marking Codes (See Table Below & Diagram
on Page 4)
All Dimensions in mm
E
B
·
·
Ordering & Date Code Information: See Page 4
Approx. Weight: 0.008 grams
Marking Code (Note 2)
Type
Marking
1A, K1Q
Type
Marking
1G, K1M
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
1B, K1R
1J, K1J, K1E, K1Q
1E, K1E, K1Q
1F, K1F, K1R
1K, K1K, K1F, K1R
1L, K1L, K1M
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
80
50
30
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC846
BC847
BC848
VCBO
V
65
45
30
BC846
BC847
BC848
VCEO
V
V
6.0
5.0
BC846, BC847
BC848
VEBO
IC
ICM
Collector Current
100
200
mA
mA
Peak Collector Current
Peak Emitter Current
Power Dissipation (Note 1)
IEM
200
mA
Pd
300
mW
°C/W
°C
RqJA
Tj, TSTG
417
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC846.
3. No purposefully added lead.
DS11108 Rev. 17 - 2
1 of 4
BC846A-BC848C
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 4)
BC846
BC847
BC848
80
50
30
—
—
—
—
—
—
V(BR)CBO
V
Collector-Emitter Breakdown Voltage (Note 4) BC846
65
45
30
—
—
—
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
BC847
BC848
V
V
Emitter-Base Breakdown Voltage
(Note 3)
BC846, BC847
BC848
6
5
V(BR)EBO
IE = 1mA, IC = 0
—
—
H-Parameters
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
Small Signal Current Gain
Current Gain Group A
—
—
—
—
—
—
—
—
—
—
—
—
220
330
—
—
—
—
—
—
—
—
—
—
—
—
—
—
B
C
600
—
Input Impedance
Current Gain Group A
2.7
kW
kW
kW
µS
µS
µS
—
B
C
V
CE = 5.0V, IC = 2.0mA,
4.5
f = 1.0kHz
8.7
Output Admittance
Current Gain Group A
18
B
C
A
B
C
30
60
1.5x10-4
2x10-4
3x10-4
Reverse Voltage Transfer Ratio
Current Gain Group
—
—
DC Current Gain
Current Gain Group A
B
110
200
420
180
290
520
220
450
800
hFE
—
V
CE = 5.0V, IC = 2.0mA
(Note 4)
C
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
90
250
600
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
mV
mV
mV
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
200
I
C = 10mA, IB = 0.5mA
700
900
—
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
580
—
660
—
700
770
Base-Emitter Voltage (Note 4)
Collector-Cutoff Current (Note 4)
V
CE = 80V
ICES
ICES
ICES
ICBO
ICBO
BC846
BC847
BC848
—
—
—
—
—
—
—
—
—
—
15
15
15
15
5.0
nA
nA
nA
nA
µA
VCE = 50V
VCE = 30V
VCB = 40V
VCB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
Gain Bandwidth Product
100
—
300
3.0
—
—
MHz
pF
VCB = 10V, f = 1.0MHz
CCBO
Collector-Base Capacitance
V
CE = 5V, IC = 200µA,
Noise Figure
RS = 2.0kW,
NF
—
2
10
dB
f = 1.0kHz, Df = 200Hz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
DS11108 Rev. 17 - 2
2 of 4
BC846A-BC848C
www.diodes.com
0.4
0.3
IC
IB
= 20
350
300
250
200
150
TA = 25°C
0.2
TA = 150°C
100
0.1
0
TA = -50°C
100
50
0
200
0.1
1
10
1000
0
175
25
50
150
75 100 125
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
100
10
1000
100
VCE = 5V
TA = 150°C
TA = 25°C
TA = -50°C
10
1
1
1
10
100
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
DS11108 Rev. 17 - 2
3 of 4
www.diodes.com
BC846A-BC848C
(Note 5)
Ordering Information
Device
Packaging
Shipping
BC84xx-7*
SOT-23
3000/Tape & Reel
Notes:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
* xx = device type, e.g. BC846A-7.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above.
Example: BC846A-7-F.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K1Q or 1A = BC846A
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS11108 Rev. 17 - 2
4 of 4
BC846A-BC848C
www.diodes.com
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