BC847BS [DIODES]
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR; 双NPN表面贴装小信号晶体管
| 型号： | BC847BS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847BS
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
ꢁ
ꢁ
ꢁ
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
SOT-363
Min
Dim
A
Max
0.30
1.35
2.20
Mechanical Data
A
0.10
ꢁ
ꢁ
Case: SOT-363, Molded Plastic
C2
B1
E1
B
1.15
Case material - UL Flammability Rating
Classification 94V - 0
C
2.00
C
B
D
0.65 Nominal
ꢁ
ꢁ
Moisture sensitivity: Level 1 perJ-STD-020A
E2
B2
C1
F
0.30
1.80
ꢂ
0.40
2.20
0.10
1.00
0.40
0.25
Terminals: Solderable per MIL-STD-202,
Method 208
G
H
H
J
ꢁ
ꢁ
ꢁ
ꢁ
Terminal Connections: See Diagram
Marking: K1F (See Page 2)
K
J
K
M
0.90
0.25
0.10
Weight: 0.006 grams
L
Ordering & Date Code Information: See Page 2
M
L
D
F
a
°8
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCBO
V
50
Collector-Base Voltage
VCEO
VEBO
IC
V
V
Collector-Emitter Voltage
45
5.0
Emitter-Base Voltage
Collector Current
100
mA
mA
mA
mW
°C/W
°C
ICM
Peak Collector Current
200
IBM
Peak Base Current
200
Pd
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
200
RꢀJA
Tj, TSTG
500
-55 to +125
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
DS30222 Rev. 3 - 2
1 of 3
BC847BS
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
hFE
DC Current Gain (Note 2)
200
—
450
—
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
—
—
100
400
VCE(SAT)
—
mV
Collector-Emitter Saturation Voltage (Note 2)
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
VCE = 5.0V, IC = 2.0mA
VCB = 30V, IE = 0
VBE(SAT)
VBE
ICBO
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
—
755
665
—
mV
mV
580
700
Collector Cutoff Current (Note 2)
—
—
15
5.0
nA
µA
—
—
VCB = 30V, Tj = 125°C
ICBO
VEB = 5.0V, IC = 0
IEBO
Emitter Cutoff Current (Note 2)
Gain Bandwidth Product
—
—
100
—
nA
VCE = 5.0V, IC = 10mA,
f = 100MHz
fT
100
MHz
V
CB = 10V, f = 1.0MHz
CCBO
CEBO
Collector-Base Capacitance
Emitter-Base Capacitance
—
—
—
1.5
—
pF
pF
VEB = 0.5V, f = 1.0MHz
11
(Note 3)
Ordering Information
Device
Packaging
Shipping
BC847BS-7
SOT-363
3000/Tape & Reel
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1F = Product Type Marking Code
K1F
Y M
YM
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K 1 F
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30222 Rev. 3 - 2
2 of 3
BC847BS
250
200
1000
VCE = 5V
(see Note 1)
100°C
TA = 25°C
100
150
100
50
-50°C
10
1
0
0
100
200
0.01
0.1
1.0
10
100
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Power Derating Curve
Fig. 2, DC Current Gain vs Collector Current
0.5
0.4
1000
100
10
TA = 25°C
IC / IB = 20
VCE = 10V
5V
2V
0.3
0.2
0.1
0
TA = 100°C
25°C
-50°C
0.1
1.0
10
100
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
Notes:
1. Device mounted on FR4 printed circuit board.
DS30222 Rev. 3 - 2
3 of 3
BC847BS
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