BC856AW [DIODES]
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR; PNP表面贴装小信号晶体管
| 型号： | BC856AW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
Ideally Suited for Automatic Insertion
SOT-323
Complementary NPN Types Available
(BC846W-BC848W)
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
A
C
·
For Switching and AF Amplifier Applications
B
Mechanical Data
C
B
C
·
·
Case: SOT-323, Molded Plastic
D
0.65 Nominal
B
E
Case material - UL Flammability Rating
Classification 94V-0
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
G
H
·
·
Moisture sensitivity: Level 1 perJ-STD-020A
Terminals: Solderable per MIL-STD-202, Method K
208
M
J
K
0.90
0.25
0.10
0°
J
·
·
Pin Connections: See Diagram
L
D
F
L
Marking Code: See Table Below & Diagram
on Page 2
M
a
·
·
Ordering & Date Code Information: See Page 2
Approx. Weight: 0.006 grams
Marking Code (Note 2)
All Dimensions in mm
Type
Marking
K3A
Type
Marking
K3G
BC856AW
BC856BW
BC857AW
BC857BW
BC857CW
BC858AW
BC858BW
BC858CW
K3B
K3J, K3A, K3V
K3K, K3B, K3W
K3L, K3G
K3V, K3A
K3W, K3B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
-80
-50
-30
Collector-Base Voltage
BC856
BC857
BC858
VCBO
V
-65
-45
-30
Collector-Emitter Voltage
BC856
BC857
BC858
VCEO
V
VEBO
IC
-5.0
-100
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
ICM
Peak Collector Current
-200
IEM
Peak Emitter Current
-200
Pd
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
200
RqJA
Tj, TSTG
625
-65 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
DS30251 Rev. A-2
1 of 2
BC856AW - BC858CW
@ TA =25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage (Note 3)
BC856
BC857
BC858
-80
-50
-30
—
—
—
—
—
—
V(BR)CBO
V
BC856
BC857
BC858
-65
-45
-30
—
—
—
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
V(BR)EBO
hFE
V
V
-5
—
—
IE = 1mA, IC = 0
DC Current Gain (Note 3)
Current Gain Group A
125
220
420
180
290
520
250
475
800
B
C
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
—
-75
-250
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
—
mV
mV
mV
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-700
-850
—
-950
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
—
-650
—
-750
-820
VCB = -30V
VCB = -30V, TA = 150°C
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current (Note 3)
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
100
—
200
3
—
4.5
10
MHz
pF
V
CB = -10V, f = 1.0MHz
CE = -5.0V, IC = 200µA,
CCBO
V
RS = 2kW, f = 1kHz,
Df = 200Hz
NF
—
—
dB
Notes:
3. Short duration pulse test to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
Shipping
BC85xxW-7*
SOT-323
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30251 Rev. A-2
2 of 2
BC856AW - BC858CW
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