BC857BT-13 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | BC857BT-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: BC847AT BC857BT BC857CT
BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Die Construction
Complementary NPN Types Available
(BC847AT, BT, CT)
SOT-523
·
·
Ultra-Small Surface Mount Package
A
Dim Min Max Typ
Available in Lead Free/RoHS Compliant Version
(Note 2)
A
B
C
D
G
H
J
C
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
C
B
TOP VIEW
Mechanical Data
·
·
¾
¾
0.50
Case: SOT-523
E
B
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C
K
J
M
Terminals: Solderable per MIL-STD-202, Method 208
K
L
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 5, on Page 2
L
D
M
N
a
·
·
·
·
Terminal Connections: See Diagram
Weight: 0.002 grams (approx.)
0°
8°
¾
Marking Codes (See Table Below & Diagrams on Page 2)
Ordering & Date Code Information: See Page 2
All Dimensions in mm
Type
Marking
3V
BC857AT
BC857BT
BC857CT
3W
3G
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-45
-5.0
-100
150
833
V
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 1)
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30275 Rev. 5 - 2
1 of 3
BC857AT, BT, CT
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
—
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage (Note 3)
-50
-45
-5
IC = 10mA, IB = 0
—
—
V
IE = 1mA, IC = 0
—
—
V
DC Current Gain (Note 3)
Current Gain A
125
220
420
—
250
475
800
hFE
B
C
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
290
520
—
—
—
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
—
mV
mV
mV
I
C = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
—
—
-700
-900
—
—
I
C = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
-600
—
—
—
-750
-820
V
CE = -5.0V, IC = -10mA
VCB = -30V
—
—
—
—
-15
NA
µA
Collector-Cutoff Current (Note 3)
V
CB = -30V, TA = 150°C
ICBO
fT
-4.0
VCE = -5.0V, IC = -10mA,
f = 100MHz
Gain Bandwidth Product
Output Capacitance
100
—
—
—
—
MHz
pF
VCB = -10V, f = 1.0MHz
COB
4.5
IC = -0.2mA, VCE = -5.0Vdc,
Noise Figure
NF
—
—
10
dB
RS = 2.0KW, f = 1.0KHz,
BW = 200Hz
Notes:
3. Short duration pulse test used to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
Shipping
BC857AT-7
BC857BT-7
BC857CT-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
4. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above.
Example: BC857CT-7-F.
Marking Information
XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT
YM = Date Code Marking
Y = Year (ex: N = 2002)
XXYM
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30275 Rev. 5 - 2
2 of 3
BC857AT, BT, CT
www.diodes.com
250
200
150
100
50
0.5
0.4
IC
IB
= 10
0.3
0.2
TA = 25°C
TA = 150°C
0.1
0
TA = -50°C
1000
100
0
200
0
175
25
50
150
100 125
75
0.1
1
10
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
1000
100
10
TA = 150°C
VCE = 5V
VCE = 5V
100
10
1
TA = 25°C
TA = -50°C
10
1
100
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30275 Rev. 5 - 2
3 of 3
www.diodes.com
BC857AT, BT, CT
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