BC857BV [DIODES]
PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP双小信号表面贴装晶体管![BC857BV](http://pdffile.icpdf.com/pdf1/p00105/img/icpdf/BC857BV_566571_icpdf.jpg)
型号: | BC857BV |
厂家: | ![]() |
描述: | PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
文件: | 总3页 (文件大小:348K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SPICE MODEL: BC857BV
BC857BV
PNP DUAL SMALL SIGNAL SURFACE MOUNT
TRANSISTOR
Pb
Lead-free
Features
·
Epitaxial Die Construction
A
·
Complementary NPN Types Available
(BC847BV)
B
2
C
E
2
1
SOT-563
·
·
Ultra-Small Surface Mount Package
B
C
K5V YM
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
Lead Free By Design/RoHS Compliant (Note 3)
A
B
C
D
G
H
K
L
0.15
1.10
1.55
E
B
C
2
1
1
D
Mechanical Data
G
·
Case: SOT-563
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
0.90
1.50
0.56
0.10
0.10
1.00
1.60
0.60
0.20
0.11
M
K
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
H
L
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
SEE NOTE 1
M
All Dimensions in mm
·
·
·
Marking (See Page 2): K5V
C1
B2
E2
Ordering & Date Code Information: See Page 2
Weight: 0.003 grams (approximate)
E1
B1
C2
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
-45
-5.0
V
-100
mA
mW
°C/W
°C
Pd
Power Dissipation (Note 2)
150
R
qJA
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
833
Tj, TSTG
-55 to +150
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
DS30433 Rev. 3 - 2
1 of 3
BC857BV
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol Min
Typ
—
Max
—
Unit
V
Test Condition
IC = 10mA, IB = 0
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
(Note 4)
(Note 4)
(Note 4)
(Note 4)
-50
-45
-5
IC = 10mA, IB = 0
—
—
V
IE = 1mA, IC = 0
—
—
V
VCE = -5.0V, IC = -2.0mA
220
290
475
—
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-100
-400
VCE(SAT)
VBE(SAT)
VBE(ON)
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
(Note 4)
(Note 4)
(Note 4)
(Note 4)
—
mV
mV
mV
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
—
—
-700
-900
—
—
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
—
—
—
-750
-820
VCB = -30V
VCB = -30V, TA = 150°C
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Gain Bandwidth Product
Output Capacitance
100
—
—
—
—
MHz
pF
VCB = -10V, f = 1.0MHz
COB
4.5
IC = -0.2mA, VCE = -5.0Vdc,
RS = 2.0KW, f = 1.0KHz,
BW = 200Hz
Noise Figure
NF
—
—
10
dB
(Note 5)
Ordering Information
Device
Packaging
Shipping
BC857BV-7
SOT-563
3000/Tape & Reel
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K5V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
K5V YM
M = Month (ex: 9 = September)
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30433 Rev. 3 - 2
2 of 3
BC857BV
www.diodes.com
250
200
150
100
0.5
I
C
= 10
I
B
0.4
0.3
T
A
= 25°C
0.2
T = 150°C
A
0.1
50
T = -50°C
A
0
0
1000
0.1
1
10
100
-50
0
50
100
150
I , COLLECTOR CURRENT (mA)
C
T , AMBIENT TEMPERATURE (°C)
A
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
Fig. 1 Derating Curve - Total
1000
1000
100
10
T = 150°C
A
V
= 5V
CE
V
= 5V
CE
100
10
1
T
A
= 25°C
T = -50°C
A
10
1
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs. Collector Current
Fig. 4, Gain Bandwidth Product vs Collector Current
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodes Incorporatedand all thecompanies whoseproducts arerepresentedonourwebsite, harmless againstall damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President ofDiodes Incorporated.
DS30433 Rev. 3 - 2
3 of 3
BC857BV
www.diodes.com
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