BC857BV [DIODES]

PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP双小信号表面贴装晶体管
BC857BV
型号: BC857BV
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PNP双小信号表面贴装晶体管

晶体 晶体管 光电二极管
文件: 总3页 (文件大小:348K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODEL: BC857BV  
BC857BV  
PNP DUAL SMALL SIGNAL SURFACE MOUNT  
TRANSISTOR  
Pb  
Lead-free  
Features  
·
Epitaxial Die Construction  
A
·
Complementary NPN Types Available  
(BC847BV)  
B
2
C
E
2
1
SOT-563  
·
·
Ultra-Small Surface Mount Package  
B
C
K5V YM  
Dim Min  
Max  
0.30  
1.25  
1.70  
0.50  
1.10  
1.70  
0.60  
0.30  
0.18  
Typ  
0.25  
1.20  
1.60  
Lead Free By Design/RoHS Compliant (Note 3)  
A
B
C
D
G
H
K
L
0.15  
1.10  
1.55  
E
B
C
2
1
1
D
Mechanical Data  
G
·
Case: SOT-563  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
0.90  
1.50  
0.56  
0.10  
0.10  
1.00  
1.60  
0.60  
0.20  
0.11  
M
K
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
H
L
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
SEE NOTE 1  
M
All Dimensions in mm  
·
·
·
Marking (See Page 2): K5V  
C1  
B2  
E2  
Ordering & Date Code Information: See Page 2  
Weight: 0.003 grams (approximate)  
E1  
B1  
C2  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
-45  
-5.0  
V
-100  
mA  
mW  
°C/W  
°C  
Pd  
Power Dissipation (Note 2)  
150  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 2)  
Operating and Storage Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Notes:  
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
DS30433 Rev. 3 - 2  
1 of 3  
BC857BV  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
Symbol Min  
Typ  
Max  
Unit  
V
Test Condition  
IC = 10mA, IB = 0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE  
(Note 4)  
(Note 4)  
(Note 4)  
(Note 4)  
-50  
-45  
-5  
IC = 10mA, IB = 0  
V
IE = 1mA, IC = 0  
V
VCE = -5.0V, IC = -2.0mA  
220  
290  
475  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
-100  
-400  
VCE(SAT)  
VBE(SAT)  
VBE(ON)  
ICBO  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
(Note 4)  
(Note 4)  
(Note 4)  
(Note 4)  
mV  
mV  
mV  
IC = -10mA, IB = -0.5mA  
IC = -100mA, IB = -5.0mA  
-700  
-900  
VCE = -5.0V, IC = -2.0mA  
VCE = -5.0V, IC = -10mA  
-600  
-750  
-820  
VCB = -30V  
VCB = -30V, TA = 150°C  
-15  
-4.0  
nA  
µA  
Collector-Cutoff Current  
VCE = -5.0V, IC = -10mA,  
f = 100MHz  
fT  
Gain Bandwidth Product  
Output Capacitance  
100  
MHz  
pF  
VCB = -10V, f = 1.0MHz  
COB  
4.5  
IC = -0.2mA, VCE = -5.0Vdc,  
RS = 2.0KW, f = 1.0KHz,  
BW = 200Hz  
Noise Figure  
NF  
10  
dB  
(Note 5)  
Ordering Information  
Device  
Packaging  
Shipping  
BC857BV-7  
SOT-563  
3000/Tape & Reel  
Notes:  
4. Short duration pulse test used to minimize self-heating effect.  
5. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K5V = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: T = 2006)  
K5V YM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30433 Rev. 3 - 2  
2 of 3  
BC857BV  
www.diodes.com  
250  
200  
150  
100  
0.5  
I
C
= 10  
I
B
0.4  
0.3  
T
A
= 25°C  
0.2  
T = 150°C  
A
0.1  
50  
T = -50°C  
A
0
0
1000  
0.1  
1
10  
100  
-50  
0
50  
100  
150  
I , COLLECTOR CURRENT (mA)  
C
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 2 Collector Emitter Saturation Voltage  
vs. Collector Current  
Fig. 1 Derating Curve - Total  
1000  
1000  
100  
10  
T = 150°C  
A
V
= 5V  
CE  
V
= 5V  
CE  
100  
10  
1
T
A
= 25°C  
T = -50°C  
A
10  
1
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Fig. 3, DC Current Gain vs. Collector Current  
Fig. 4, Gain Bandwidth Product vs Collector Current  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodes Incorporatedand all thecompanies whoseproducts arerepresentedonourwebsite, harmless againstall damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the  
President ofDiodes Incorporated.  
DS30433 Rev. 3 - 2  
3 of 3  
BC857BV  
www.diodes.com  

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