BCP5616TC [DIODES]
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223; 采用SOT223 NPN硅平面中功率晶体管
| 型号： | BCP5616TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 |
| 文件： | 总7页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP 54 / 55 / 56
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
Features
Mechanical Data
•
•
Case: SOT223
Case Material: Molded Plastic, “Green” Molding
Compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
•
•
•
•
•
•
•
•
IC = 1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary PNP types: BCP51, 52 and 53
Lead-Free, RoHS Compliant (Note 1)
•
•
•
•
Halogen and Antimony Free. “Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.112 grams (Approximate)
Applications
•
•
Medium Power Switching or Amplification Applications
AF driver and output stages
SOT223
C
E
E
C
B
C
B
Device Symbol
Top View
Top View
Pin-Out
Ordering Information (Note 3)
Product
BCP54TA
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
BCP 54
BCP 5410
BCP 5416
BCP 55
BCP 5510
BCP 5516
BCP 56
BCP 5610
BCP 5616
BCP 5616
7
7
7
7
7
7
7
7
7
12
12
12
12
12
12
12
12
12
12
BCP5410TA
BCP5416TA
BCP55TA
BCP5510TA
BCP5516TA
BCP56TA
BCP5610TA
BCP5616TA
BCP5616TC
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
13
4,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
BCP = Product Type Marking Code, Line 1.
XXXX = Product Type Marking Code, Line 2 as follows:
BCP
xxxx
BCP54 = 54
BCP55 = 55
BCP56 = 56
BCP5610 = 5610
BCP5616 = 5616
BCP5410 = 5410
BCP5416 = 5416
BCP5510 = 5510
BCP5516 = 5516
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© Diodes Incorporated
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
BCP54
45
BCP55
60
BCP56
100
80
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
45
60
V
5
V
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
1
A
2
ICM
100
200
IB
mA
IBM
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
2
62
Unit
W
Power Dissipation (Note 4)
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
°C/W
°C/W
°C
19.4
RθJL
-65 to +150
TJ, TSTG
Notes:
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
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© Diodes Incorporated
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
Thermal Characteristics
160
140
120
100
80
60
50
40
30
50mm x 50mm 1oz Cu
= 25°C
50mm x 50mm 1oz Cu
= 25°C
T
amb
T
amb
Single pulse
D=0.5
60
20 D=0.2
10
Single Pulse
D=0.05
D=0.1
40
20
0
0
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
50mm x 50mm
1oz Cu
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80 100 120 140 160
Temperature (°C)
Derating Curve
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June 2011
© Diodes Incorporated
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
45
60
100
45
60
80
5
Typ
Max
Unit
Test Condition
BCP54
BCP55
BCP56
BCP54
BCP55
BCP56
Collector-Base
Breakdown Voltage
-
-
V
BVCBO
IC = 100µA
Collector-Emitter
-
-
-
V
BVCEO
IC = 10mA
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-
-
-
V
BVEBO
ICBO
IE = 10µA
VCB = 30V
CB = 30V, TA = 150°C
0.1
20
-
-
µA
nA
V
Emitter Cut-off Current
20
IEBO
VEB = 4V
25
40
25
-
-
-
-
250
-
IC = 5mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, VCE = 2V
All versions
Static Forward Current Transfer Ratio (Note 6)
hFE
10 gain grp
16 gain grp
63
100
-
-
-
-
-
-
160
250
0.5
IC = 150mA, VCE = 2V
IC = 150mA, VCE = 2V
IC = 500mA, IB = 50mA
IC = 500mA, VCE = 2V
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
V
V
VCE(sat)
VBE(on)
1.0
IC = 50mA, VCE = 10V
f = 100MHz
Transition Frequency
Output Capacitance
fT
150
-
-
-
-
MHz
pF
Cobo
25
VCB = 10V, f = 1MHz
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0.8
250
200
150
100
0.6
0.4
0.2
0
50
0
0
1
2
3
4
5
0.001
0.01
0.1
1
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage
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BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
1.2
1.0
0.4
0.3
0.8
0.6
0.4
0.2
0.1
0.2
0
0
0.0001 0.001
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
140
120
100
80
0.8
0.6
0.4
0.2
0
60
40
20
0
0.0001 0.001
0.01
0.1
1
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics
300
250
200
150
100
V
= 5V
CE
50
0
f = 100MHz
0
20
40
60
80
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product
vs. Collector Current
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BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
Package Outline Dimensions
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
A
Q
All Dimensions in mm
A1
Suggested Pad Layout
X1
Y1
Dimensions Value (in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
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BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
BCP 54 / 55 / 56
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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June 2011
© Diodes Incorporated
BCP 54 / 55 / 56
Datasheet Number: DS35367 Rev. 2 – 2
相关型号：
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