BCW61CRTC [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | BCW61CRTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon 晶体 晶体管 局域网 |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 95
BCW61
PARTMARKING DETAIL
BCW61A
BCW61B
BCW61C
BCW61D
BA
BB
BC
BD
BCW61AR CA
BCW61BR CB
BCW61CR CC
BCW61DR CD
E
C
B
COMPLEMENTARY TYPE BCW60
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
-32
-32
Collector-Emitter Voltage
Emitter-Base Voltage
V
-5
V
Continuous Collector Current
Base Current
-200
mA
mA
mW
°C
IB
-50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
Tj:Tstg
330
-55 to +150
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)
CE
c
hFEGroup A
hFEGroup B
hFE GroupC
hFEGroup D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e
h12e
h21e
h22e
1.6
2.7
1.5
200
18
4.5
30
2.5
3.6
2
6.0
50
3.2
4.5
2
8.5
4.5
7.5
3
12
kΩ
10-4
260
24
330
30
520
50
60
100
µS
+VBB
VCC(-10V)
R
R
1µsec
R
-10V
tr < 5nsec
tr < 5nsec
Mark/Space ratio < 0.01
Zin ≥ 100kΩ
BAY 63
50Ω
Oscilloscope
Zs=50Ω
S
W
PAGE NO
ITCHING CIRCUIT
BCW61
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICES
-32
V
ICEO=-2mA
IEBO=-1µA
VCES=-32V
Emitter-Base
Breakdown Voltage
-5
V
Collector-Emitter Cut-off
Current
-20
-20
nA
µA
V
CES=-32V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
-20
nA
VEBO=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.12 -0.25
-0.25 -0.55
V
V
IC=-10mA,IB= -0.25mA
IC=-50mA, IB =-1.25mA
Base-Emitter
Saturation Voltage
VBE(sat)
VBE
-0.60 -0.70 -0.85
-0.68 -0.80 -1.05
V
V
IC =-10mA, IB=-0.25mA
IC =-50mA, IB=-1.25mA
Base - Emitter Voltage
-0.55
-0.65 -0.75
-0.72
V
V
V
IC=-10µA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-50mA, VCE =-1V
-0.6
Static
BCW61A
BCW61B
140
170
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
Forward
Current
Transfer
Ratio
hFE
120
60
220
310
460
630
30
180
80
200
250
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
BCW61C
BCW61D
40
250
100
270
350
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
100
380
110
340
500
IC=-10µA, VCE =-5V
IC=-2mA, VCE =-5V
IC=-50mA, VCE =-1V
Transition Frequency
fT
180
11
MHz
IC =10mA, VCE= -5V
f = 100MHz
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Cebo
Ccbo
N
pF
pF
dB
VEBO= -0.5V,f =1MHz
VCBO= -10V, f =1MHz
6
6
2
IC =- 0.2mA, VCE =- 5V
RG=2KΩ, f=1KHz
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
ns
ns
ns
ns
ns
ns
-IC : -IB1: IB2 =10:1:1mA
R1=R2=5KΩ
VBB =-3.6V, RL=990Ω
150
800
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
相关型号：
BCW61CS62Z
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
BCW61CT216
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, SST, 3 PIN
ROHM
BCW61CTF
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
BCW61CTI
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
BCW61CTR
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明