BCW66F [DIODES]
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
| 型号： | BCW66F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN IOT 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PART OBSOLETE - USE BCW66H
SOT23 NPN SILICON PLANAR
BCW65
BCW66
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS
BCW65A EA
BCW65B EB
BCW65C EC
BCW66F EF
BCW66G EG
BCW66H EH
BCW65AR 4V
BCW65BR 5V
BCW65CR 6V
BCW66FR 7P
BCW66GR 5T
BCW66HR 7M
E
C
B
COMPLEMENTARY TYPES
BCW65 BCW67
SOT23
BCW66 BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
BCW65
60
BCW66
75
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
32
45
V
5
V
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
800
1000
100
330
mA
mA
mA
mW
°C
ICM
IB
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
Tj:Tstg
-55 to +150
3 - 27
PART OBSOLETE - USE BCW66H
BCW65
BCW66
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW65 V(BR)CEO 32
BCW66 45
V
V
V
ICEO=10mA
ICEO=10mA
BCW65 V(BR)CES 60
IC=10µA
IC=10µA
BCW66
75
Emitter-Base Breakdown Voltage
V(BR)EBO
5
IEBO=10µA
Collector-Emitter
Cut-off Current
BCW65 ICES
20
20
nA VCES= 32V
µA
VCES= 32V ,Tamb=150oC
BCW66
20
20
V
CES= 45V
nA
µA
VCES= 45V ,Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA VEBO=4V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
0.3
0.7
V
V
IC=100mA, IB=10mA
IC= 500mA, IB=50mA*
VBE(SAT)
2
V
IC=500mA, IB=50mA*
Static
BCW65A hFE
BCW66F
35
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
Forward
Current
Transfer
75
100
35
160
250
350
250
BCW65B hFE
BCW66G
50
110
160
60
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
400
630
BCW65C hFE
BCW66H
80
180
250
100
IC=100µA, VCE =10V
IC= 10mA, VCE = 1V
IC=100mA, VCE = 1V*
IC=500mA, VCE = 2V*
Transition Frequency
fT
100
MHz IC =20mA, VCE =10V
f = 100MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
Ccbo
Cebo
N
8
2
12
80
10
pF VCBO=10V, f =1MHz
pF VEBO=0.5V, f =1MHz
dB IC= 0.2mA, VCE = 5V
RG =1kΩ
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns IC=150mA
ns IB1=- IB2 =15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 28
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