BCW67CTC [DIODES]
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;
| 型号： | BCW67CTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN 晶体 晶体管 局域网 |
| 文件： | 总2页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PART OBSOLETE - USE BCW68H
SOT23 PNP SILICON PLANAR
BCW67
BCW68
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS
BCW67A DA
BCW67B DB
BCW67C DC
BCW68F DF
BCW68G DG
BCW68H DH
BCW67AR 4W
BCW67BR 5W
BCW67CR 6W
BCW68FR 7T
BCW68GR 5T
BCW68HR 7N
E
C
B
COMPLEMENTARY TYPES
BCW67 BCW65
SOT23
BCW68 BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCES
VCEO
VEBO
ICM
BCW67
-45
BCW68
-60
UNIT
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-32
-45
V
-5
V
Peak Pulse Current(10ms)
Continuous Collector Current
Base Current
-1000
-800
-100
330
mA
mA
mA
mW
°C
IC
IB
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
Tj:Tstg
-55 to +150
3 - 29
PART OBSOLETE - USE BCW68H
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
V(BR)CEO -32
-45
V
ICEO=-10mA
ICEO=-10mA
BCW67
BCW68
V(BR)CES -45
-60
IC=-10µA
IC=-10µA
Emitter-Base Breakdown Voltage
V(BR)EBO -5
ICES
V
I
EBO=-10µA
Collector-Emitter
Cut-off Current
BCW67
-20
-10
nA
µA
VCES=-32V
VCES=-32V ,Tamb=150 C
°
BCW68
-20
-10
VCES=-45V
VCES=-45V , Tamb=150°C
nA
µA
Emitter-Base Cut-Off Current
IEBO
-20
nA
VEBO=-4V
Collector-Emitter Saturation Voltage VCE(sat)
-0.3
V
V
IC=-100mA, IB= -10mA
IC= -500mA, IB=-50mA*
-0.7
Base-Emitter Saturation Voltage
VBE(sat)
-2
V
IC=-500mA, IB=-50mA*
Static
BCW67A hFE
BCW68F
75
100 170 250
35
IC=-10mA, VCE =-1V
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Forward
Current
Transfer
BCW67B hFE
BCW68G
120
160 250 400
60
IC=-10mA, VCE =-1V
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW67C hFE
BCW68H
180
250 350 630
100
IC=-10mA, VCE =-1V
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency
fT
100
MHz IC =-20mA, VCE =-10V
f = 100MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
Ccbo
Cebo
N
12
2
18
80
10
pF
pF
dB
VCBO =-10V, f =1MHz
VEBO=-0.5V, f =1MHz
IC= -0.2mA, VCE =- 5V
RG =1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100 ns
400 ns
IC=-150mA
IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 30
相关型号：
BCW67LEADFREE
Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明