BCX52TA [DIODES]
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89; 在SOT89 PNP硅平面中功率晶体管
| 型号： | BCX52TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 |
| 文件： | 总7页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX 51 / 52 / 53
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
Features
Mechanical Data
•
•
Case: SOT89
Case Material: Molded Plastic, “Green” Molding
Compound (Note 2)
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
•
•
•
•
•
•
•
•
IC = -1A Continuous Collector Current
Low Saturation Voltage VCE(sat) < -500mV @ -0.5A
Gain groups 10 and 16
Epitaxial Planar Die Construction
Complementary NPN types: BCX54, 55, and 56
Lead-Free, RoHS Compliant (Note 1)
•
•
•
•
Halogen and Antimony Free. “Green” Devices (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.072 grams (Approximate)
Applications
•
•
Medium Power Switching or Amplification Applications
AF driver and output stages
SOT89
C
E
C
B
C
B
E
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Note 3)
Product
BCX51TA
BCX5110TA
BCX5116TA
BCX52TA
BCX5210TA
BCX5216TA
BCX53TA
BCX5310TA
BCX5316TA
BCX5316TC
BCX5316-13R
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
AA
AC
AD
AE
AG
AM
AH
AK
AL
7
7
7
7
7
7
7
7
7
12
12
12
12
12
12
12
12
12
12
12
1,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
AL
AL
13
13
4,000
4,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
xx = Product Type Marking Code, as follows:
BCX51 = AA
BCX5110 = AC
BCX5116 = AD
BCX52 = AE
BCX5210 = AG
BCX5316 = AM
BCX53 = AH
BCX5310 = AK
BCX5316 = AL
xx
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June 2011
© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
BCX51
-45
BCX52
-60
BCX53
-100
-80
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-45
-60
V
-5
V
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
-1
A
-1.5
-100
-200
ICM
IB
mA
IBM
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation (Note 4)
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
124
°C/W
°C/W
°C
10.0
RθJL
-65 to +150
TJ, TSTG
Notes:
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
Thermal Characteristics
120
25mm x 25mm 1oz Cu
25mm x 25mm 1oz Cu
T
= 25°C
T
= 25°C
amb
amb
D=0.5
D=0.2
100
10
1
100
80
60
40
20
0
Single pulse
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
1.0
25mm x 25mm 1oz Cu
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
-45
-60
-100
-45
-60
-80
-5
Typ
Max
Unit
Test Condition
BCX51
BCX52
BCX53
BCX51
BCX52
BCX53
Collector-Base
Breakdown Voltage
-
-
V
BVCBO
IC = -100µA
Collector-Emitter
-
-
-
V
BVCEO
IC = -10mA
Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
-
-
-
V
BVEBO
ICBO
IE = -10µA
VCB = -30V
CB = -30V, TA = 150°C
-0.1
-20
-
-
µA
nA
V
Emitter Cut-off Current
-20
IEBO
VEB = -4V
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
25
40
25
-
-
-
-
250
-
All versions
I
I
I
C = -500mA, VCE = -2V
C = -150mA, VCE = -2V
C = -150mA, VCE = -2V
Static Forward Current Transfer Ratio (Note 6)
hFE
10 gain grp
16 gain grp
63
-
-
-
-
160
250
-0.5
-1.0
100
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
-
-
V
V
VCE(sat)
VBE(on)
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
I
C = -50mA, VCE = -10V
Transition Frequency
Output Capacitance
fT
150
-
-
-
-
MHz
pF
f = 100MHz
Cobo
25
VCB = -10V, f = 1MHz
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
500
1.0
0.8
V
= -5V
CE
I
= 10mA
B
I
= 8mA
B
400
300
T
T
= 150°C
A
I
= 6mA
B
0.6
0.4
= 85°C
= 25°C
I
= 4mA
A
A
B
T
T
200
100
0
I
= 2mA
B
0.2
0
= -55°C
A
0.001
0.01
0.1
1
10
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
vs. Collector-Emitter Voltage
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
0.5
0.4
1.0
0.8
T
T
= -55°C
A
0.3
0.2
0.6
0.4
0.2
0
= 25°C
= 85°C
A
T
= 150°C
A
T
T
= 85°C
A
A
T
= 150°C
A
T
= 25°C
A
0.1
0
V
= -2V
CE
T
= -55°C
A
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT(A)
-IC, COLLECTOR CURRENT (A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
300
250
200
150
100
1.0
0.8
0.6
T
= -55°C
A
T
= 25°C
= 85°C
A
T
A
0.4
V
= -5V
T
= 150°C
CE
A
f = 100MHz
0.2
0
50
0
I
/ I = 10
B
C
0.001
0.01
0.1
1
10
0
20
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
40
60
80
100
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
160
140
f = 1MHz
120
100
80
C
ibo
60
40
20
0
C
obo
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
Package Outline Dimensions
D1
C
SOT89
Min
Dim
A
B
B1
C
D
Max
1.40
0.44
0.35
0.35
4.40
1.52
2.29
1.60
0.62
0.54
0.43
4.60
1.83
2.60
E
H
L
B
D1
E
e
B1
e1
e
e1
H
1.50 Typ
3.00 Typ
3.94
0.89
4.25
1.20
A
L
All Dimensions in mm
D
Suggested Pad Layout
X1
Dimensions Value (in mm)
X
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
X1
X2
Y
Y1
Y2
Y3
Y4
C
X2 (2x)
Y1
Y3
Y4
Y2
C
Y
X (3x)
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
BCX 51 / 52 / 53
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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© Diodes Incorporated
BCX 51 / 52 / 53
Datasheet Number: DS35368 Rev. 2 – 2
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