BS107PTSTOB [DIODES]
Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | BS107PTSTOB |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 小信号场效应晶体管 开关 |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
·
·
·
·
High Breakdown Voltage
High Input Impedance
Fast Switching Speed
Specially Suited for Telephone Subsets
E
A
TO-92
Min
B
C
Dim
A
Max
4.70
4.70
—
4.45
4.46
12.7
0.41
3.43
2.42
1.14
B
C
Mechanical Data
D
0.63
3.68
2.67
1.40
·
·
Case: TO-92 Plastic
Leads: Solderable per
MIL-STD-202, Method 208
Pin Connections: See Diagram
Weight: 0.18 grams (approx.)
E
D
G
H
BOTTOM S G D
VIEW
·
·
All Dimensions in mm
H
G
H
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
VDGS
VGS
Value
200
200
20
Unit
V
Drain-Source-Voltage
Drain-Gate-Voltage
V
Gate-Source-Voltage (pulsed) (Note 2)
Drain-Current (continuous)
V
ID
120
830
mA
mW
°C
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Pd
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Inverse Diode
Characteristic
Symbol
Value
Unit
IF
Maximum Forward Current (continuous)
0.5
A
Forward Voltage Drop (typical)
@ VGS = 0, IF = 0.5A, Tj = 25°C
VF
0.85
V
Electrical Characteristics @ T = 25°C unless otherwise specified
A
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
ID = 100µA, VGS = 0
V(BR)DSS
200
230
—
V
Gate-Body Leakage Current
VGS = 15V, VDS = 0
VDS =130V, VGS = 0
IGSS
—
—
—
—
—
10
nA
IDSS
IDSX
30
1.0
nA
µA
Drain-Cutoff Current
V
DS = 70V, VGS = 0.2V
Gate-Source Threshold Voltage
VGS = VDS, ID = 1.0mA
VGS(th)
1.8
3
V
Drain-Source ON Resistance
VGS = 2.8V, ID = 20 mA
(Note 1)
rDS(ON)
RqJA
—
—
18
—
28
W
Thermal Resistance, Junction to Ambient Air
150
K/W
Ciss
Coss
Crss
Input Capacitance
58
8.0
1.5
VDS = 20V, VGS = 0,f =1.0MHz
Output Capacitance
Feedback Capacitance
—
—
—
—
pF
ns
V
GS = 10V, VDS = 10V,
D = 100W
ton
toff
Turn On Time
Turn Off Time
5.0
15
R
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
DA21804 Rev. C-3
1 of 2
BS107
500
400
1
See Note 2
TA = 25°C
(See Note 1)
0.8
VGS = 4.0V
300
200
0.6
0.4
3.5
3.0
100
0
0.2
0
2.5
2.0
40
60
80
100
0
20
0
100
200
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2. Output Characteristics
TA, AMBIENT TEMPERATURE (ºC)
Fig. 1. Power Derating Curve
1.0
500
400
TA = 25°C
(See Note 2)
(See Note 2)
VDS = 25V
TA = 25°C
0.8
0.6
0.4
V
= 4V
GS
300
200
3.5V
3V
0.2
0
100
0
2.5V
2V
1
2
3
4
5
10
0
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4. Drain Current vs Gate-Source Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 3. Saturation Characteristics
500
400
500
VDS = 25V
See Note 2
(See Note 2)
VDS = 25V
400
300
200
300
200
100
0
100
0
0
1
2
3
4
5
200
100
0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Fig. 5. Transconductance vs Gate-Source Voltage
ID, DRAIN CURRENT (mA)
Fig. 6. Transconductance vs. Drain Current
DA21804 Rev. C-3
2 of 2
BS107
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