BST52TA [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN;
| 型号： | BST52TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN 开关 晶体管 |
| 文件： | 总6页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
BST52
80V NPN SILICON PLANAR DARLINGTON TRANSISTOR
IN SOT89
Features
Mechanical Data
•
•
•
•
•
Case: SOT89
•
•
•
•
•
•
•
BVCEO > 80V
High current gain
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Rating 94V-0
Terminals: Matte Tin Finish
Max Continuous Current IC = 500mA
Fast switching
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free, “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.052 grams (Approximate)
SOT89
Top View
Device symbol
Top View
Pin-out
Ordering Information (Note 3)
Product
BST52TA
Marking
AS3
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
7
12
Notes:
1. No purposefully added lead.
2. Halogen and Antimony Free. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
AS3 = Product Type Marking Code
BST52
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December 2011
© Diodes Incorporated
Datasheet Number: DS33022 Rev. 4 - 2
A Product Line of
Diodes Incorporated
BST52
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
90
Unit
V
80
V
10
V
Continuous Collector Current
Peak Pulse Current
500
1.5
mA
A
ICM
Base Current
100
mA
IB
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation (Note 4)
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Leads (Note 5)
Operating and Storage Temperature Range
125
°C/W
°C/W
°C
8.66
RθJL
-55 to +150
TJ,TSTG
Notes:
4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics
120
25mm x 25mm 1oz Cu
= 25°C
25mm x 25mm 1oz Cu
T
T
= 25°C
amb
amb
D=0.5
D=0.2
100
10
1
100
80
60
40
20
0
Single pulse
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
1.0
25mm x 25mm 1oz Cu
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
BST52
Datasheet Number: DS33022 Rev. 4 - 2
2 of 6
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December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
BST52
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Notes 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICES
Min
90
80
10
-
Typ.
Max
-
-
Unit
V
Test Condition
-
-
-
-
-
IC = 10µA
IC = 10mA
IE = 10µA
VCE = 80V
VEB = 8V
V
-
V
10
10
µA
µA
Emitter Cutoff Current
-
IEBO
I
I
C = 150mA, VCE = 10V
C = 500mA, VCE = 10V
1000
2000
DC current transfer Static ratio (Notes 6)
-
-
-
hFE
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA, TJ=150°C
IC = 500mA, IB = 0.5mA
IC = 500mA,
1.3
1.3
-
-
-
Collector-Emitter Saturation Voltage (Notes 6)
V
V
VCE(sat)
Base-Emitter Saturation Voltage (Notes 6)
Turn On Time
-
1.9
VBE(sat)
tON
0.4
1.5
-
µs
Turn Off Time
IBon = IBoff = 0.5mA
tOFF
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
BST52
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December 2011
© Diodes Incorporated
Datasheet Number: DS33022 Rev. 4 - 2
A Product Line of
Diodes Incorporated
BST52
Typical Electrical Characteristics
BST52
4 of 6
www.diodes.com
December 2011
© Diodes Incorporated
Datasheet Number: DS33022 Rev. 4 - 2
A Product Line of
Diodes Incorporated
BST52
Package Outline Dimensions
D1
C
SOT89
Dim
A
B
B1
C
D
Min
1.40
0.44
0.35
0.35
4.40
1.52
2.29
Max
1.60
0.62
0.54
0.43
4.60
1.83
2.60
E
H
L
D1
E
B
e
B1
e1
e
e1
H
1.50 Typ
3.00 Typ
3.94
0.89
4.25
1.20
L
A
All Dimensions in mm
D
Suggested Pad Layout
X1
Dimensions Value (in mm)
X
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
X1
X2
Y
Y1
Y2
Y3
Y4
C
X2 (2x)
Y1
Y3
Y
Y4
Y2
C
X (3x)
BST52
5 of 6
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December 2011
© Diodes Incorporated
Datasheet Number: DS33022 Rev. 4 - 2
A Product Line of
Diodes Incorporated
BST52
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2011, Diodes Incorporated
www.diodes.com
BST52
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December 2011
© Diodes Incorporated
Datasheet Number: DS33022 Rev. 4 - 2
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