BYV28200 [DIODES]

3.0A SUPER-FAST GLASS BODY RECTIFIER; 3.0A超高速玻璃体整流器
BYV28200
型号: BYV28200
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

3.0A SUPER-FAST GLASS BODY RECTIFIER
3.0A超高速玻璃体整流器

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中文:  中文翻译
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BYV28/50 - BYV28/200  
3.0A SUPER-FAST GLASS BODY RECTIFIER  
Features  
·
·
·
·
Hermetically Sealed Glass Body Construction  
Controlled Avalanche Characteristics  
Super-Fast Switching for High Efficiency  
A
B
A
High Current Capability and Low Forward  
Voltage Drop  
·
·
Surge Overload Rating to 90A Peak  
Low Reverse Leakage Current  
C
D
Mechanical Data  
SOD-64  
Min  
26.0  
¾
Dim  
A
Max  
·
·
Case: SOD-64, Glass  
¾
4.2  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
·
·
·
·
Polarity: Cathode Band  
Weight: 1.0 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
C
¾
1.35  
4.3  
D
¾
All Dimensions in mm  
@ T = 25°C unless otherwise specified  
j
Maximum Ratings and Electrical Characteristics  
Characteristic  
Symbol  
BYV28/50  
BYV28/100  
BYV28/150  
BYV28/200  
Unit  
V
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
50  
100  
150  
200  
V
R
V
RMS Reverse Voltage  
35  
55  
70  
100  
165  
140  
220  
V
V
A
R(RMS)  
V
Non-Repetitive Peak Reverse Voltage  
Average Rectified Output Current  
110  
RSM  
I
(Note 1)  
3.5  
90  
O
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
I
A
FSM  
I
Repetitive Forward Surge Current  
25  
A
V
FRM  
Forward Voltage  
@ I = 5.0A  
F
V
1.1  
FM  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ T = 25°C  
j
@ T = 165°C  
j
1.0  
150  
I
mA  
RM  
Non-Repetitive Reverse Avalanche Energy  
E
RSM  
20  
mJ  
I
= 0.6A Inductive Load  
@ T = 175°C  
j
R
t
Reverse Recovery Time  
(Note 2)  
30  
25  
ns  
K/W  
°C  
rr  
R
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
qJA  
T T  
j, STG  
-65 to +175  
Notes:  
1.Leads maintained at ambient temperature at a distance of 10mm from the case.  
2. Measured with I = 0.5A, I = 1.0A, I = 0.25A. See Figure 4.  
F
R
rr  
DS30033 Rev. A - PRELIMINARY  
1 of 2  
BYV28/50 - BYV28/200  
4
100  
10  
Single phase half wave  
Resistive or Inductive load  
3
2
1
T = 25°C  
j
1
0.1  
0.01  
0
0
0.6  
1.2  
1.8  
2.4  
3.0  
0
25  
50  
75  
100 125  
150 175  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
1000  
100  
10  
1
V
= V  
RRM  
R
0.1  
0
40  
80  
120  
160  
200  
Tj, Junction Temperature (°C)  
Fig. 3 Typical Reverse Characteristics  
trr  
+0.5A  
50NI  
50NI  
Device  
Under  
Test  
(-)  
0
(+)  
(-)  
Pulse  
Generator  
(Note 2)  
50V DC  
Approx  
-0.25A  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
1. Rise Time = 7.0ns max. Input impedance = 1.0M, 22pF.  
2. Rise Time = 10ns max. Input impedance = 50.  
-1.0A  
Set time base for 50/100 ns/cm  
Fig. 4 Reverse Recovery Time Characteristic and Test Circuit  
DS30033 Rev. A - PRELIMINARY  
2 of 2  
BYV28/50 - BYV28/200  

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