BZT52C5V1Q-7-F [DIODES]
Zener Diode, 5.1V V(Z), 5.88%, 0.37W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2;型号: | BZT52C5V1Q-7-F |
厂家: | DIODES INCORPORATED |
描述: | Zener Diode, 5.1V V(Z), 5.88%, 0.37W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2 测试 光电二极管 |
文件: | 总5页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZT52C2V0 - BZT52C51
SURFACE MOUNT ZENER DIODE
Features
Mechanical Data
•
•
•
•
•
•
•
Planar Die Construction
500mW Power Dissipation
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: SOD123
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
•
•
•
•
Weight: 0.010 grams (approximate)
SOD123
Top View
Ordering Information (Notes 5 & 6)
Part Number
Qualification
Commercial
Automotive
Commercial
Automotive
Case
Packaging
(Type Number)-7-F
(Type Number)Q-7-F
(Type Number)-13-F
(Type Number)Q-13-F
SOD123
SOD123
SOD123
SOD123
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com.
6. For (Type Number), please see the Electrical Characteristics Table. Example: 6.2V Zener = BZT52C6V2Q-13-F.
Marking Information
xx = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
xx
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
1 of 5
www.diodes.com
September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
BZT52C2V0 - BZT52C51
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
0.9
V
Forward Voltage
@ IF = 10mA
VF
Thermal Characteristics
Characteristic
Power Dissipation (Note 7) @TL = +75°C
Power Dissipation (Note 8) @TA = +25°C
Symbol
PD
Value
500
Unit
mW
mW
370
PD
Thermal Resistance, Junction to Ambient Air (Note 8)
Thermal Resistance, Junction to Lead (Note 9)
Operating and Storage Temperature Range
338
°C/W
°C/W
°C
Rθ
Rθ
JA
150
JL
-65 to +150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Maximum
Reverse
Current
Maximum Zener
Impedance
f = 1kHz
Temperature
Coefficient
Zener Voltage Range
(Note 10)
Test
Current
IZTC
Type
Number
Marking
Codes
@ IZTC
mV/°C
(Note 10)
VZ @ IZT
IZT
ZZT @ IZT
ZZK @ IZK
IZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
IR
uA
150
50
@ VR
V
1.0
1.0
Nom (V) Min (V) Max (V) mA
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
Max
0
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
-
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
Ω
BZT52C2V0
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
WY
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
2.0
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
1.91
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
2.09
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
100
100
600
600
600
600
600
600
600
600
500
480
400
150
80
20
1.0
10
1.0
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32.0
35.0
38.0
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
750
750
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
7.0
9.2
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
WV
WW
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
-
-
-
-
-
-
-
-
51
-
Notes:
7. RθJL = 132°C/W
8. Device mounted on ceramic PCB with copper pad areas 40mm2.
9. Thermal Resistance measurement obtained via infrared scan method.
10. Short duration pulse test used to minimize self-heating effect.
2 of 5
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September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
BZT52C2V0 - BZT52C51
20
15
0.4
0.3
C2V0
C2V4
R
= 338°C/W
JA
θ
Note 8
C2V7
C3V0
C3V3
C3V6
C3V9
C4V3
C4V7
0.2
10
C5V1
C5V6
C6V2
C6V8
0.1
0
5
0
C7V5
0
25
50
75
100
125
C)
150
0
2
4
6
8
10
TA, AMBIENT TEMPERATURE (
°
VZ, ZENER VOLTAGE (V)
Fig. 1 Power Derating Curve
Fig. 2 Typical Zener Breakdown Characteristics
30
20
10
T
= 25°C
C10
C12
J
8
6
C15
C18
Test Current I
2mA
Z
4
C22
10
C27
Test Current I
Z
5mA
C33
C36
2
0
0
0
10
20
30
40
0
10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Fig. 3 Typical Zener Breakdown Characteristics
Fig. 4 Typical Zener Breakdown Characteristics
1,000
100
10
T = 25 °C
J
f = 1MHz
V
= 1V
R
V
= 2V
R
V
= 1V
R
V
= 2V
R
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Typical Total Capacitance vs. Nominal Zener Voltage
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September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
BZT52C2V0 - BZT52C51
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
C
H
SOD123
Min
Dim
A
Max
0.55 Typ
A
B
B
C
H
J
K
L
M
α
1.40
3.55
2.55
0.00
1.00
0.25
0.10
0
1.70
3.85
2.85
0.10
1.35
0.40
0.15
8°
K
M
L
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X
Y
Dimensions Value (in mm)
G
X
X1
Y
2.250
0.900
4.050
0.950
G
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September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
BZT52C2V0 - BZT52C51
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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September 2012
© Diodes Incorporated
BZT52C2V0 - BZT52C51
Document number: DS18004 Rev. 37 - 2
相关型号:
BZT52C5V1S-13
Zener Diode, 5.1V V(Z), 5.88%, 0.2W, Silicon, Unidirectional, ULTRA SMALL, PLASTIC PACKAGE-2
DIODES
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