DCX114YH [DIODES]
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号SOT- 563双表面贴装晶体管型号: | DCX114YH |
厂家: | DIODES INCORPORATED |
描述: | COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR |
文件: | 总6页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: DCX124EH DCX144EH DCX143EH DCX114YH DCX123JH DCX114EH DCX143TH DCX114TH
Pb
Lead-free
DCX (xxxx) H
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL
SOT-563 DUAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
Epitaxial Planar Die Construction
Built-In Biasing Resistors
SOT-563
A
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.25
0.18
Typ
0.25
1.20
1.60
Lead Free By Design/RoHS Compliant (Note 2)
A
B
C
D
G
H
K
L
0.15
1.10
1.55
B
CXXYM
C
Mechanical Data
·
·
Case: SOT-563
D
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
0.90
1.50
0.56
0.15
0.10
1.00
1.60
0.60
0.20
0.11
·
·
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
M
K
·
·
Terminal Connections: See Diagram
Weight: 0.005 grams (approx.)
M
H
L
All Dimensions in mm
P/N
R1
R2
MARKING
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
22KW
47KW
4.7KW
10KW
2.2KW
10KW
4.7KW
10KW
22KW
47KW
4.7KW
47KW
47KW
10KW
-
C17
C20
C08
C14
C06
C13
C07
C12
R1
R2
R1
R1
R2
R1
-
R1, R2
SCHEMATIC DIAGRAM, TOP VIEW
R1 Only
@ TA = 25°C unless otherwise specified
Maximum Ratings NPN Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
50
V
Input Voltage
DCX124EH
DCX144EH
-10 to +40
-10 to +40
-10 to +30
-6 to +40
-5 to +12
-10 to +40
-5 Vmax
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
VIN
V
-5 Vmax
Output Current
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
30
30
100
70
IO
mA
100
50
100
100
I
C (Max)
Pd
Output Current
All
100
150
mA
mW
°C/W
°C
Power Dissipation (Total)
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
833
Tj, TSTG
-55 to +150
Notes:
1. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30422 Rev. 2 - 2
1 of 6
DCX (xxxx) H
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Maximum Ratings PNP Section
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage
50
V
Input Voltage
DCX124EH
DCX144EH
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
VIN
V
Output Current
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
DCX143TH
DCX114TH
-30
-30
-100
-70
IO
mA
-100
-50
-100
-100
IC (Max)
Pd
Output Current
All
-100
150
mA
mW
°C
Power Dissipation (Total)
Tj, TSTG
Operating and Storage and Temperature Range
-55 to +150
Electrical Characteristics NPN Section @ TA = 25°C unless otherwise specified
Characteristic (DDC143TH & DDC114TH only) Symbol
Min Typ
Max
¾
Unit
V
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IC = 50mA
IC = 1mA
IE = 50mA
VCB = 50V
VEB = 4V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
50
50
5
¾
¾
¾
¾
¾
¾
V
--
V
¾
¾
0.5
0.5
mA
mA
IEBO
Emitter Cutoff Current
IC/IB = 2.5mA / 0.25mA
IC/IB = 1mA / 0.1mA
DCX143TH
DCX114TH
VCE(sat)
Collector-Emitter Saturation Voltage
¾
¾
0.3
V
hFE
fT
IC = 1mA, VCE = 5V
DC Current Transfer Ratio
Gain-Bandwidth Product*
100
250
250
600
¾
VCE = 10V, IE = -5mA, f = 100MHz
¾
¾
MHz
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DCX124EH
0.5
0.5
0.5
0.3
0.5
0.5
1.1
1.1
1.1
¾
¾
1.1
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(off)
Vl(on)
VO(on)
V
V
CC = 5V, IO = 100mA
¾
Input Voltage
V
V
O = 0.3V, IO = 5mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
1.9
1.9
1.9
--
--
1.9
3.0
3.0
3.0
1.4
1.1
3.0
VO = 0.3V, IO = 2mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 1mA
VO = 0.3V, IO = 5mA
VO = 0.3V, IO = 10mA
¾
¾
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 10mA / 0.5mA
IO/Il = 5mA / 0.25mA
IO/Il = 5mA / 0.25mA
IO/Il = 10mA / 0.5mA
Output Voltage
0.1
0.3
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
0.36
0.18
1.8
VI = 5V
Il
Input Current
¾
¾
¾
¾
¾
mA
mA
¾
0.88
3.6
0.88
VCC = 50V, VI = 0V
IO(off)
Output Current
DC Current Gain
0.5
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
56
68
20
68
80
30
Gl
¾
* Transistor - For Reference Only
DS30422 Rev. 2 - 2
2 of 6
www.diodes.com
DCX (xxxx) H
@ TA = 25°C unless otherwise specified
Electrical Characteristics PNP Section
Characteristic (DCX143TH & DCX114TH only) Symbol
Min Typ
Max
¾
Unit
V
Test Condition
IC = -50mA
IC = -1mA
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-5
¾
¾
¾
¾
¾
¾
V
IE = -50mA
VCB = -50V
VEB = -4V
¾
V
¾
-0.5
-0.5
mA
mA
IEBO
Emitter Cutoff Current
¾
IC/IB = 2.5mA / 0.25mA
IC/IB = 1mA / 0.1mA
DCX143TH
DCX114TH
VCE(sat)
Collector-Emitter Saturation Voltage
¾
¾
-0.3
V
hFE
fT
IC = -1mA, VCE = -5V
DC Current Transfer Ratio
Gain-Bandwidth Product*
100
250
250
600
¾
VCE = -10V, IE = 5mA, f = 100MHz
¾
¾
MHz
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DCX124EH
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
-1.1
¾
¾
-1.1
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
Vl(off)
Vl(on)
VO(on)
V
V
CC = -5V, IO = -100mA
¾
Input Voltage
V
V
O = -0.3V, IO = -5mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
-1.9
-1.9
-1.9
¾
¾
-1.9
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
VO = -0.3V, IO =- 2mA
VO = -0.3V, IO =- -20mA
VO = -0.3V, IO = -1mA
VO = -0.3V, IO = -5mA
VO = -0.3V, IO = -10mA
¾
¾
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -10mA / -0.5mA
IO/Il = -5mA / -0.25mA
IO/Il = -5mA / -0.25mA
IO/Il = -10mA /- 0.5mA
Output Voltage
-0.1
-0.3
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
-0.36
-0.18
-1.8
VI = -5V
Il
Input Current
¾
¾
¾
¾
¾
mA
mA
¾
-0.88
-3.6
-0.88
VCC = 50V, VI = 0V
IO(off)
Output Current
DC Current Gain
-0.5
VO = -5V, IO = -5mA
VO = -5V, IO = -5mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -10mA
VO = -5V, IO = -5mA
DCX124EH
DCX144EH
DCX143EH
DCX114YH
DCX123JH
DCX114EH
56
68
20
68
80
30
Gl
¾
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
250
¾
MHz
* Transistor - For Reference Only
DS30422 Rev. 2 - 2
3 of 6
www.diodes.com
DCX (xxxx) H
(Note 3)
Ordering Information
Device
Packaging
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
SOT-563
Shipping
DCX124EH-7
DCX144EH-7
DCX143EH-7
DCX114YH-7
DCX123JH-7
DCX114EH-7
DCX143TH-7
DCX114TH-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
CXX = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
CXXYM
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
Code
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30422 Rev. 2 - 2
4 of 6
DCX (xxxx) H
www.diodes.com
TYPICAL CURVES - DCX143EH NPN SECTION
1
250
200
150
100
I /I = 10
C
B
0.1
75°C
25°C
-25°C
0.01
50
0
0.001
-50
0
50
100
150
10
40
20
0
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve - Total
1000
5
4
IE = 0mA
VCE = 10
75°C
100
25°C
3
2
-25°C
10
1
0
1
0
10
15
30
25
5
20
1
10
100
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC CURRENT GAIN
10
100
VO = 0.2
75°C
25°C
10
-25°C
-25°C
75°C
1
1
25°C
0.1
0.01
1
6
7
8
9
0
1
2
3
4
5
10
0
10
20
30
40
50
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30422 Rev. 2 - 2
5 of 6
www.diodes.com
DCX (xxxx) H
TYPICAL CURVES - DCX143EH PNP SECTION
1
1000
I /I = 10
C
B
VCE = 10
75°C
75°C
0.1
100
-25°C
25°C
25°C
-25°C
0.01
10
0.001
1
10
40
20
0
30
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 VCE(SAT) vs. IC
IC, COLLECTOR CURRENT (mA)
Fig. 8 DC Current Gain
100
12
IE = 0mA
VO = 5V
75°C
25°C
10
8
10
1
-25°C
6
4
2
0
0.1
0.01
0
10
15
30
25
5
20
6
7
8
9
0
1
2
3
4
5
10
VR, REVERSE BIAS VOLTAGE (V)
Fig. 9 Output Capacitance
Vin, INPUT VOLTAGE (V)
Fig. 10 Collector Current Vs. Input Voltage
10
VO = 0.2
-25°C
75°C
1
25°C
1
0
10
IC, COLLECTOR CURRENT (mA)
Fig. 11 Input Voltage vs. Collector Current
20
30
40
50
DS30422 Rev. 2 - 2
6 of 6
DCX (xxxx) H
www.diodes.com
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