DCX124EH_2 [DIODES]

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR; 互补NPN / PNP预偏置小信号双表面贴装晶体管
DCX124EH_2
型号: DCX124EH_2
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
互补NPN / PNP预偏置小信号双表面贴装晶体管

晶体 晶体管
文件: 总6页 (文件大小:236K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DCX (xxxx) H  
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Built-In Biasing Resistors  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 3 and 4)  
SOT-563  
A
Dim Min  
Max Typ  
0.30 0.25  
1.25 1.20  
1.70 1.60  
0.50  
A
B
C
D
G
H
K
L
0.15  
1.10  
1.55  
B
CXX YM  
C
Mechanical Data  
Case: SOT-563  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Alloy 42  
leadframe. Solderable per MIL-STD-202, Method 208  
D
G
0.90  
1.50  
0.56  
0.15  
0.10  
1.10 1.00  
1.70 1.60  
0.60 0.60  
0.25 0.20  
0.18 0.11  
M
K
Terminal Connections: See Diagram  
Weight: 0.005 grams (approximate)  
M
H
All Dimensions in mm  
L
P/N  
R1  
R2  
22KΩ  
47KΩ  
4.7KΩ  
47KΩ  
47KΩ  
10KΩ  
MARKING  
22KΩ  
47KΩ  
4.7KΩ  
10KΩ  
2.2KΩ  
10KΩ  
4.7KΩ  
10KΩ  
C17  
C20  
C08  
C14  
C06  
C13  
C07  
C12  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
DCX143TH  
DCX114TH  
R1  
R1  
R1  
R2  
R2  
R1  
R1 Only  
R1, R2  
SCHEMATIC DIAGRAM, TOP VIEW  
Maximum Ratings NPN Section  
@TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage  
Input Voltage  
50  
V
VCC  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
DCX143TH  
DCX114TH  
DCX124EH  
DCX144EH  
DCX143EH  
-10 to +40  
-10 to +40  
-10 to +30  
-6 to +40  
-5 to +12  
-10 to +40  
-5V max  
-5V max  
30  
V
VIN  
Output Current  
30  
100  
DCX114YH  
DCX123JH  
70  
100  
mA  
IO  
DCX114EH  
DCX143TH  
DCX114TH  
50  
100  
100  
Output Current  
All  
(Total)  
100  
150  
mA  
mW  
°C/W  
°C  
IC (Max)  
Pd  
Power Dissipation  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
(Note 1)  
833  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30422 Rev. 3 - 2  
DCX (xxxx) H  
© Diodes Incorporated  
1 of 6  
www.diodes.com  
Maximum Ratings PNP Section  
@TA = 25°C unless otherwise specified  
Characteristic  
Supply Voltage  
Input Voltage  
Symbol  
VCC  
DCX124EH  
Value  
50  
Unit  
V
+10 to -40  
+10 to -40  
+10 to -30  
+6 to -40  
+5 to -12  
+10 to -40  
+5V max  
+5V max  
-30  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
DCX143TH  
DCX114TH  
DCX124EH  
DCX144EH  
DCX143EH  
V
VIN  
Output Current  
-30  
-100  
DCX114YH  
DCX123JH  
-70  
-100  
mA  
IO  
DCX114EH  
DCX143TH  
DCX114TH  
-50  
-100  
-100  
Output Current  
Power Dissipation (Total)  
Operating and Storage Temperature Range  
All  
-100  
150  
-55 to +150  
mA  
mW  
°C  
IC (Max)  
Pd  
Tj, TSTG  
Electrical Characteristics NPN Section  
@TA = 25°C unless otherwise specified  
Characteristic (DDC143TH & DDC114TH only)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
50  
50  
5
Typ  
Max  
−−  
0.5  
Unit  
V
V
Test Condition  
IC = 50μA  
IC = 1mA  
IE = 50μA  
VCB = 50V  
VEB = 4V  
V
μA  
μA  
Emitter Cutoff Current  
0.5  
IEBO  
IC/IB = 2.5mA / 0.25mA  
IC/IB = 1mA / 0.1mA  
IC = 1mA, VCE = 5V  
DCX143TH  
DCX114TH  
Collector-Emitter Saturation Voltage  
0.3  
V
VCE(sat)  
DC Current Transfer Ratio  
Gain-Bandwidth Product*  
100  
250  
250  
600  
hFE  
fT  
MHz  
VCE = 10V, IE = -5mA, f = 100MHz  
Characteristic  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
1.1  
1.1  
1.1  
1.1  
0.5  
0.5  
0.5  
0.3  
0.5  
0.5  
V
Vl(off)  
VCC = 5V, IO = 100μA  
Input Voltage  
VO = 0.3V, IO = 5mA  
VO = 0.3V, IO = 2mA  
VO = 0.3V, IO = 20mA  
VO = 0.3V, IO = 1mA  
VO = 0.3V, IO = 5mA  
VO = 0.3V, IO = 10mA  
IO/Il = 10mA / 0.5mA  
IO/Il = 10mA / 0.5mA  
IO/Il = 10mA / 0.5mA  
IO/Il = 5mA / 0.25mA  
IO/Il = 5mA / 0.25mA  
IO/Il = 10mA / 0.5mA  
1.9  
1.9  
1.9  
1.9  
DCX124EH  
3.0  
3.0  
3.0  
1.4  
1.1  
3.0  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
Vl(on)  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
Output Voltage  
0.1  
0.3  
V
VO(on)  
DCX124EH  
DCX144EH  
0.36  
0.18  
1.8  
0.88  
3.6  
0.88  
0.5  
DCX143EH  
Input Current  
DCX114YH  
mA  
Il  
VI = 5V  
DCX123JH  
DCX114EH  
Output Current  
IO(off)  
μA VCC = 50V, VI = 0V  
VO = 5V, IO = 5mA  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
56  
68  
20  
68  
80  
30  
VO = 5V, IO = 5mA  
VO = 5V, IO = 10mA  
VO = 5V, IO = 10mA  
DC Current Gain  
Gl  
VO = 5V, IO = 10mA  
VO = 5V, IO = 5mA  
* Transistor - For Reference Only  
DS30422 Rev. 3 - 2  
DCX (xxxx) H  
© Diodes Incorporated  
2 of 6  
www.diodes.com  
Electrical Characteristics PNP Section  
@TA = 25°C unless otherwise specified  
Characteristic (DCX143TH & DCX114TH only)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
-50  
V
BVCBO  
BVCEO  
BVEBO  
ICBO  
IC = -50μA  
IC = -1mA  
IE = -50μA  
VCB = -50V  
VEB = -4V  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
-50  
-5  
V
V
-0.5  
-0.5  
μA  
μA  
V
Emitter Cutoff Current  
IEBO  
IC/IB = 2.5mA / 0.25mA  
IC/IB = 1mA / 0.1mA  
DCX143TH  
DCX114TH  
Collector-Emitter Saturation Voltage  
-0.3  
600  
VCE(sat)  
100  
DC Current Transfer Ratio  
Gain-Bandwidth Product*  
250  
250  
hFE  
fT  
IC = -1mA, VCE = -5V  
MHz  
VCE = -10V, IE = 5mA, f = 100MHz  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
-1.1  
-1.1  
-1.1  
1.1  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
-0.5  
-0.5  
-0.5  
-0.3  
-0.5  
-0.5  
Vl(off)  
VCC = -5V, IO = -100μA  
Input Voltage  
V
DCX124EH  
VO = -0.3V, IO = -5mA  
VO = -0.3V, IO = - 2mA  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -1mA  
VO = -0.3V, IO = -5mA  
VO = -0.3V, IO = -10mA  
IO/Il = -10mA / -0.5mA  
IO/Il = -10mA / -0.5mA  
IO/Il = -10mA / -0.5mA  
IO/Il = -5mA / -0.25mA  
IO/Il = -5mA / -0.25mA  
IO/Il = -10mA / -0.5mA  
-1.9  
-1.9  
-1.9  
-1.9  
-3.0  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
-3.0  
-3.0  
-1.4  
-1.1  
-3.0  
Vl(on)  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
Output Voltage  
-0.1  
-0.3  
V
VO(on)  
DCX124EH  
DCX144EH  
-0.36  
-0.18  
-1.8  
-0.88  
-3.6  
DCX143EH  
Input Current  
DCX114YH  
mA  
Il  
VI = -5V  
DCX123JH  
DCX114EH  
-0.88  
Output Current  
-0.5  
IO(off)  
μA VCC = 50V, VI = 0V  
DCX124EH  
DCX144EH  
DCX143EH  
DCX114YH  
DCX123JH  
DCX114EH  
VO = -5V, IO = -5mA  
VO = -5V, IO = -5mA  
VO = -5V, IO = -10mA  
VO = -5V, IO = -10mA  
VO = -5V, IO = -10mA  
VO = -5V, IO = -5mA  
56  
68  
20  
68  
80  
30  
DC Current Gain  
Gl  
fT  
Gain-Bandwidth Product*  
250  
MHz  
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
DS30422 Rev. 3 - 2  
DCX (xxxx) H  
© Diodes Incorporated  
3 of 6  
www.diodes.com  
Typical Curves – DCX143EH NPN Section  
250  
1
I
/I = 10  
B
C
200  
150  
0.1  
75°C  
-25°C  
25°C  
100  
50  
0.01  
0.001  
0
-50  
10  
40  
20  
0
50  
100  
150  
0
30  
50  
IC, COLLECTOR CURRENT (mA)  
Fig. 2 VCE(SAT) vs. IC  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Derating Curve - Total  
1,000  
100  
5
4
3
2
1
0
I
= 0mA  
E
V
= 10  
CE  
10  
1
1
10  
100  
0
10  
15  
30  
25  
5
20  
IC, COLLECTOR CURRENT (mA)  
Fig. 3 DC Current Gain  
VR, REVERSE BIAS VOLTAGE (V)  
Fig. 4 Output Capacitance  
100  
10  
V
= 0.2  
O
75°C  
10  
1
-25°C  
75°C  
1
25°C  
0.1  
0.01  
0.1  
6
7
8
9
0
1
2
3
4
5
10  
0
10  
20  
30  
40  
50  
Vin, INPUT VOLTAGE (V)  
Fig. 5 Collector Current vs. Input Voltage  
IC, COLLECTOR CURRENT (mA)  
Fig. 6 Input Voltage vs. Collector Current  
DS30422 Rev. 3 - 2  
DCX (xxxx) H  
© Diodes Incorporated  
4 of 6  
www.diodes.com  
Typical Curves – DCX143EH PNP Section  
1
1,000  
100  
10  
I
/I = 10  
B
C
V
= 10  
CE  
75  
C
°C  
0.1  
-25°C  
25  
°
0.01  
1
0.001  
12  
10  
40  
20  
0
30  
50  
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 8 DC Current Gain  
IC, COLLECTOR CURRENT (mA)  
Fig. 7 VCE(SAT) vs. IC  
100  
I
= 0mA  
E
V
= 5V  
O
10  
8
10  
1
6
4
0.1  
2
0.01  
0
0
6
7
8
9
0
1
2
3
4
5
10  
10  
15  
25  
30  
5
20  
VR, REVERSE BIAS VOLTAGE (V)  
Fig. 9 Output Capacitance  
Vin, INPUT VOLTAGE (V)  
Fig. 10 Collector Current vs. Input Voltage  
10  
V
= 0.2  
O
1
0.1  
0
10  
IC, COLLECTOR CURRENT (mA)  
Fig. 11 Input Voltage vs. Collector Current  
DS30422 Rev. 3 - 2  
20  
30  
40  
50  
DCX (xxxx) H  
© Diodes Incorporated  
5 of 6  
www.diodes.com  
Ordering Information (Note 5)  
Packaging  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
SOT-563  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DCX124EH-7  
DCX144EH-7  
DCX143EH-7  
DCX114YH-7  
DCX123JH-7  
DCX114EH-7  
DCX143TH-7  
DCX114TH-7  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
CXX = Product Type Marking Code (See Page 1)  
YM = Date Code Marking  
CXXYM  
Y = Year ex: P = 2003  
M = Month ex: 9 = September  
Date Code Key  
2007  
2008  
2009  
2010  
2011  
2012  
Year  
2006  
U
V
W
X
Y
Z
Code  
T
Aug  
Sep  
Oct  
Nov  
Dec  
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
8
9
O
N
D
1
2
3
4
5
6
7
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30422 Rev. 3 - 2  
DCX (xxxx) H  
© Diodes Incorporated  
6 of 6  
www.diodes.com  

相关型号:

DCX124EK

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX124EK-7

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX124EK-7-F

DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
DIODES

DCX124EK_1

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SC-74R DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX124EK_2

DUAL COMPLEMENTARY PRE-BIASED TRANSISTOR
DIODES

DCX124EU

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX124EU-13

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, PLASTIC PACKAGE-6
DIODES

DCX124EU-7

COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DIODES

DCX124EU-7-F

SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR
DIODES

DCX124EUQ-13R-F

Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, NPN and PNP, Silicon
DIODES

DCX124EUQ-7-F

Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, NPN and PNP, Silicon
DIODES

DCX124EU_1

SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR
DIODES