DDA143TK-13 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6;
| 型号： | DDA143TK-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC PACKAGE-6 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DDA (xxxx) K
PNP PRE-BIASED SMALL SIGNAL SOT-26
DUAL SURFACE MOUNT TRANSISTOR
Features
A
·
·
·
·
Epitaxial Planar Die Construction
SOT-26
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
Dim Min Max Typ
Y M P X X
B
A
B
C
D
G
H
J
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
0.95
C
Available in Lead Free/RoHS Compliant Version (Note 3)
PXX YM
G
H
Mechanical Data
1.90
·
·
Case: SOT-26
K
J
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
L
D
Terminals: Solderable per MIL-STD-202, Method 208
M
a
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Copper leadframe). Please see Ordering
Information, Note 5, on Page 2
0°
8°
¾
All Dimensions in mm
·
Marking: Date Code and Marking Code (See Diagrams &
Page 2)
6
5
4
3
6
1
5
4
3
·
·
Ordering Information (See Page 2)
Weight: 0.015 grams (approximate)
R1
R2
R1
R2
R1
R1
P/N
R1
R2
MARKING
1
2
2
22KW
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
22KW
47KW
47KW
47KW
10KW
-
P17
P20
P14
P06
P13
P07
P12
R1, R2
R1 Only
47KW
10KW
2.2KW
10KW
4.7KW
10KW
SCHEMATIC DIAGRAM
-
@ TA = 25°C unless otherwise specified
Characteristic
Maximum Ratings
Symbol
VCC
Value
Unit
Supply Voltage, (1) to (6) and (4) to (3)
Input Voltage, (2) to (1) and (5) to (4)
50
V
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
VIN
V
Output Current
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
DDA143TK
DDA114TK
-30
-30
-70
IO
-100
-50
-100
-100
mA
IC (Max)
Pd
Output Current
All
-100
300
mA
mW
°C/W
°C
Power Dissipation (Total)
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
416.7
Tj, TSTG
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. 200mW per element must not be exceeded.
3. No purposefully added lead.
DS30349 Rev. 5 - 2
1 of 6
DDA (xxxx) K
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic (DDA143TK & DDA114TK only) Symbol
Min Typ
Max
¾
Unit
V
Test Condition
IC = -50mA
IC = -1mA
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-50
-50
-5
¾
¾
¾
¾
¾
¾
V
IE = -50mA
VCB = -50V
VEB = -4V
¾
V
¾
-0.5
-0.5
mA
mA
IEBO
Emitter Cutoff Current
¾
IC/IB = -2.5mA /- 0.25mA
IC/IB = -1mA /- 0.1mA
DDA143TK
DDA114TK
VCE(sat)
Collector-Emitter Saturation Voltage
¾
¾
-0.3
V
hFE
DR1
fT
IC = -1mA, VCE = -5V
DC Current Transfer Ratio
Input Resistor (R1) Tolerance
Gain-Bandwidth Product*
100
-30
¾
250
¾
600
+30
¾
--
%
¾
VCE = -10V, IE = 5mA, f = 100MHz
250
MHz
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDA124EK
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
¾
¾
-1.1
DDA144EK
DDA114YK
DDA123JK
DDA114EK
Vl(off)
Vl(on)
VO(on)
V
CC = -5V, IO = -100mA
¾
Input Voltage
V
V
V
V
V
V
V
O = -0.3, IO = -5mA
O = -0.3, IO = -2mA
O = -0.3, IO = -1mA
O = -0.3, IO = -5mA
O = -0.3, IO = -10mA
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
-1.9
-1.9
¾
¾
-1.9
-3.0
-3.0
-1.4
-1.1
-3.0
¾
¾
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
IO/Il = -10mA /- 0.5mA
IO/Il = -10mA /- 0.5mA
IO/Il = -5mA / -0.25mA
IO/Il = -5mA / -0.25mA
IO/Il = -10mA / -0.5mA
-0.3
Output Voltage
-0.1
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
-0.36
-0.18
VI = -5V
Il
Input Current
¾
¾
¾
¾
¾
-0.88 mA
-3.6
-0.88
VCC = 50V, VI = 0V
VO = -5V, IO = -5mA
IO(off)
Output Current
DC Current Gain
-0.5
mA
DDA124EK
DDA144EK
DDA114YK
DDA123JK
DDA114EK
56
68
68
80
30
V
V
V
V
O = -5V, IO = -5mA
O = -5V, IO = -10mA
O = -5V, IO = -10mA
O = -5V, IO = -5mA
Gl
¾
¾
Input Resistor (R1) Tolerance
Resistance Ratio Tolerance
DR1
-30
-20
¾
¾
+30
+20
%
¾
¾
R2/R1
%
VCE = -10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
250
¾
MHz
* Transistor - For Reference Only
(Note 4)
Ordering Information
Device
Packaging
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
SOT-26
Shipping
DDA124EK-7
DDA144EK-7
DDA114YK-7
DDA123JK-7
DDA114EK-7
DDA143TK-7
DDA114TK-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDA114TK-7-F.
DS30349 Rev. 5 - 2
2 of 6
DDA (xxxx) K
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Marking Information
Y M P X X
PXX YM
PXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
2006
2009
2010
2011
2007
2008
2012
Code
T
W
X
Y
U
V
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30349 Rev. 5 - 2
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DDA (xxxx) K
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TYPICAL CURVES - DDA123JK
ONE SECTION
1
250
200
150
100
I /I = 10
C
B
75°C
0.1
-25°C
25°C
0.01
50
0
0.001
10
40
-50
20
0
30
50
0
50
100
150
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
12
10
1000
VCE = 10V
f = 1MHz
75°C
8
6
4
2
0
25°C
-25°C
100
0
10
15
30
20
25
5
10
1
10
100
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
10
100
75°C
VO = 5V
VO = 0.2V
25°C
10
1
-25°C
-25°C
75°C
1
0.1
0.01
25°C
0.001
0.1
1
6
7
8
9
0
2
3
4
5
10
0
10
20
30
40
50
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30349 Rev. 5 - 2
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DDA (xxxx) K
TYPICAL CURVES - DDA114TK
ONE SECTION
1
250
200
150
100
I /I = 10
C
B
25°C
0.1
-25°C
75°C
0.01
50
0
0.001
-50
10
40
20
0
50
100
150
0
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1000
12
10
VCE = 10V
f = 1MHz
75°C
-25°C
25°C
8
6
4
2
0
100
10
1
0
10
15
30
25
5
20
1
10
100
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
10
100
75°C
VO = 0.2V
25°C
10
-25°C
-25°C
1
75°C
1
0.1
0.01
25°C
0.001
1
6
7
8
9
0
1
2
3
4
5
10
0
10
20
30
40
50
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30349 Rev. 5 - 2
5 of 6
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DDA (xxxx) K
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
LIFE SUPPORT
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DS30349 Rev. 5 - 2
6 of 6
DDA (xxxx) K
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DIODES
DDA144EK-7-F
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
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