DDTA115GCA [DIODES]
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR; PNP预偏置小信号SOT- 23表面贴装晶体管型号: | DDTA115GCA |
厂家: | DIODES INCORPORATED |
描述: | PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR |
文件: | 总3页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DDTA (R2-ONLY SERIES) CA
PNP PRE-BIASED SMALL SIGNAL SOT-23
SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDTC)
A
C
SOT-23
·
Built-In Biasing Resistor, R2 only
TOP VIEW
B
C
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.85
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.80
8°
E
B
Mechanical Data
D
B
E
G
H
·
·
·
·
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 2)
C
D
K
M
E
J
L
G
H
·
·
J
K
C
·
·
Weight: 0.008 grams (approx.)
Ordering Information (See Page 2)
L
M
B
a
R2
All Dimensions in mm
P/N
R2 (NOM)
MARKING
DDTA114GCA
DDTA124GCA
DDTA144GCA
DDTA115GCA
10KW
22KW
47KW
100KW
P26
P27
P28
P29
E
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Characteristic Symbol
Maximum Ratings
Value
-50
Unit
V
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC (Max)
Pd
Collector Current
-100
mA
mW
°C/W
°C
Power Dissipation
200
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30336 Rev. 2 - 2
1 of 3
DDTA (R2-ONLY SERIES) CA
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
-50
-50
Typ
¾
Max Unit
Test Condition
IC = -50mA
¾
¾
V
V
IC = -1mA
¾
IE = -720mA, DDTA114GCA
I
I
I
E = -330mA, DDTA124GCA
E = -160mA, DDTA144GCA
E = -72mA, DDTA115GCA
BVEBO
¾
Emitter-Base Breakdown Voltage
Collector Cutoff Current
5
¾
¾
¾
¾
¾
V
mA
mA
V
VCB = -50V
ICBO
¾
-0.5
DDTA114GCA
-300
-140
-65
-580
-260
-130
-58
DDTA124GCA
DDTA144GCA
DDTA115GCA
VEB = -4V
IEBO
Emitter Cutoff Current
-30
I
I
C = -10mA, IB = -0.5mA
C = -5mA, VCE = -5V
¾
VCE(sat)
hFE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
¾
-0.3
DDTA114GCA
DDTA124GCA
DDTA144GCA
DDTA115GCA
30
56
68
82
¾
¾
Bleeder Resistor (R2) Tolerance
Gain-Bandwidth Product*
DR2
-30
¾
+30
%
VCE = -10V, IE = 5mA,
f = 100MHz
fT
¾
250
¾
MHz
* Transistor - For Reference Only
(Note 2)
Ordering Information
Device
Packaging
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
DDTA114GCA-7
DDTA124GCA-7
DDTA144GCA-7
DDTA115GCA-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code
See Sheet 1 Diagrams
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30336 Rev. 2 - 2
2 of 3
DDTA (R2-ONLY SERIES) CA
TYPICAL CURVES - DDTA114GCA
1
250
200
I /I = 10
C
B
75°C
0.1
-25°C
150
100
50
25°C
0.01
0
-50
0.001
150
50
0
100
10
40
20
0
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Derating Curve
1000
12
VCE = 10
IE = 0V
10
8
75°C
6
100
25°C
4
-25°C
2
0
0
10
15
30
25
10
5
20
1
10
100
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC CURRENT GAIN
10
1000
75°C
VO = 0.2
VO = 5V
100
75°C
25°C
10
1
-25°C
25°C
-25°C
1
0.1
0.01
0.001
0.1
6
7
8
9
0
1
2
3
4
5
10
0
200
100
300 400
500
600 700
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30336 Rev. 2 - 2
3 of 3
DDTA (R2-ONLY SERIES) CA
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