首页 |元器件品牌

DDTA142TE-7 [DIODES]

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;
DDTA142TE-7
型号： DDTA142TE-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

光电二极管 晶体管
文件： 总3页 (文件大小：131K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
DDTA (LO-R1) E  
PNP PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR  
Features  
A
•
•
Epitaxial Planar Die Construction  
Complementary NPN Types Available  
(DDTC)  
Built-In Biasing Resistors  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device (Note 3 and 4)  
SOT-523  
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
•
•
•
TOP VIEW  
C
B
0.50  
⎯
⎯
G
H
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
Mechanical Data  
•
•
Case: SOT-523  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish – Matte Tin Solderable per MIL-STD 202,  
Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe)  
K
J
M
K
L
N
•
•
M
N
α
L
D
0°  
8°  
⎯
•
All Dimensions in mm  
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Table Below & Page 3  
Ordering Information: See Page 3  
Weight: 0.002 grams (approximate)  
OUT  
3
C
R1  
B
R2  
P/N  
R1 (NOM) R2 (NOM)  
Type Code  
E
0.22KΩ  
0.47KΩ  
0.22KΩ  
0.47KΩ  
DDTA122LE  
DDTA142JE  
DDTA122TE  
DDTA142TE  
10KΩ  
10KΩ  
OPEN  
OPEN  
P81  
P82  
P83  
P84  
1
2
GND(+)  
IN  
Schematic and Pin Diagram  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
-50  
Unit  
Supply Voltage, (2) to (3)  
V
VCC  
Input Voltage, (1) to (2)  
Input Voltage, (2) to (1)  
DDTA122LE  
DDTA142JE  
DDTA122TE  
DDTA142TE  
+5 to -6  
+5 to -6  
V
V
VIN  
VEBO (MAX)  
IC  
-5  
Output Current  
All  
-100  
mA  
Power Dissipation  
(Note 1)  
(Note 1)  
150  
625  
mW  
°C/W  
°C  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DDTA (LO-R1) E  
© Diodes Incorporated  
DS30405 Rev. 6 - 2  
1 of 3  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
VCC = -5V, IO = -100μA  
DDTA122LE  
DDTA142JE  
-0.3  
-0.3  
V
Vl(off)  
⎯
⎯
Input Voltage  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -20mA  
DDTA122LE  
DDTA142JE  
-2.0  
-2.0  
V
V
Vl(on)  
VO(on)  
Il  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Voltage  
Input Current  
-0.3V  
IO/Il = -5mA/-0.25mA  
VI = -5V  
DDTA122LE  
DDTA142JE  
-28  
-13  
mA  
Output Current  
DC Current Gain  
-0.5  
IO(off)  
Gl  
μA VCC = -50V, VI = 0V  
DDTA122LE  
DDTA142JE  
56  
56  
⎯
⎯
VO = -5V, IO = -10mA  
Gain-Bandwidth Product*  
200  
MHz  
fT  
⎯
⎯
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1-Only Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
-50  
V
V
BVCBO  
⎯
⎯
⎯
IC = -50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
-40  
-5  
BVCEO  
BVEBO  
⎯
⎯
IC = -1mA  
IE = -50μA  
IE = -50μA  
DDTA122TE  
DDTA142TE  
V
⎯
Collector Cutoff Current  
-0.5  
ICBO  
IEBO  
VCE(sat)  
hFE  
⎯
⎯
⎯
⎯
μA VCB = -50V  
μA VEB = -4V  
DDTA122TE  
DDTA142TE  
⎯
⎯
-0.5  
-0.5  
Emitter Cutoff Current  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
-0.3  
V
⎯
IC = -5mA, IB = -0.25mA  
IC = -1mA, VCE = -5V  
DDTA122TE  
DDTA142TE  
100  
100  
250  
250  
600  
600  
⎯
Gain-Bandwidth Product*  
200  
MHz  
fT  
⎯
⎯
VCE = -10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Power Derating Curve  
DDTA (LO-R1) E  
© Diodes Incorporated  
DS30405 Rev. 6 - 2  
2 of 3  
www.diodes.com  
Ordering Information (Note 5)  
Packaging  
SOT-523  
SOT-523  
SOT-523  
SOT-523  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DDTA122LE-7-F  
DDTA142JE-7-F  
DDTA122TE-7-F  
DDTA142TE-7-F  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
XXX = Product Type Marking Code (See Page 1)  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
XXXYM  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DDTA (LO-R1) E  
© Diodes Incorporated  
DS30405 Rev. 6 - 2  
3 of 3  
www.diodes.com  

相关型号：

DDTA142TE-7-F

 PNP PRE-BIASED 100 mA SOT-523 SURFACE MOUNT TRANSISTOR
DIODES

DDTA142TU

 PNP PRE-BIASED 100 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTA142TU-7-F

 PNP PRE-BIASED 100 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143ECA

 PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143ECA-7

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES

DDTA143ECA-7-F

 PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143EE

 PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143EE-7

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES

DDTA143EE-7-F

 PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143EKA

 PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR
DIODES

DDTA143EKA-13

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-59, 3 PIN
DIODES

DDTA143EKA-7-F

 PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR
DIODES
©2020 ICPDF网 联系我们和版权申明