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DDTB122LC_2 [DIODES]

PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR; PNP预偏置500毫安表面贴装晶体管
DDTB122LC_2
型号： DDTB122LC_2
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
PNP预偏置500毫安表面贴装晶体管

晶体 晶体管
文件： 总3页 (文件大小：194K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DDTB (LO-R1) C  
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
A
•
•
•
•
Epitaxial Planar Die Construction  
Complementary NPN Types Available (DDTD)  
Built-In Biasing Resistors  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 1 and 3)  
SOT-23  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
TOP VIEW  
B
C
Mechanical Data  
D
G
E
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
K
M
•
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
G
H
J
J
L
K
L
•
•
•
Marking Information: See Table Below & Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
OUT  
M
α
0.085 0.180  
0° 8°  
3
C
All Dimensions in mm  
R1  
B
P/N  
R1 (NOM) R2 (NOM) Type Code  
0.22KΩ  
0.47KΩ  
0.22KΩ  
0.47KΩ  
DDTB122LC  
DDTB142JC  
DDTB122TC  
DDTB142TC  
10KΩ  
10KΩ  
OPEN  
OPEN  
P75  
P76  
P77  
P78  
R2  
E
1
2
GND(+)  
IN  
Schematic and Pin Diagram  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage, (3) to (2)  
-50  
V
VCC  
Input Voltage, (1) to (2)  
Input Voltage, (2) to (1)  
DDTB122LC  
DDTB142JC  
DDTB122TC  
DDTB142TC  
+5 to -6  
+5 to -6  
V
V
VIN  
VEBO (MAX)  
IC  
-5  
-500  
Output Current  
All  
(Note 2)  
(Note 2)  
mA  
mW  
°C/W  
°C  
Power Dissipation  
200  
PD  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DDTB (LO-R1) C  
© Diodes Incorporated  
DS30403 Rev. 6 - 2  
1 of 3  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
VCC = -5V, IO = -100μA  
DDTB122LC  
DDTB142JC  
-0.3  
-0.3  
V
Vl(off)  
⎯
⎯
Input Voltage  
VO = -0.3V, IO = -20mA  
VO = -0.3V, IO = -20mA  
DDTB122LC  
DDTB142JC  
-2.0  
-2.0  
V
V
Vl(on)  
VO(on)  
Il  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Voltage  
Input Current  
-0.3V  
IO/Il = -50mA/-2.5mA  
VI = -5V  
DDTB122LC  
DDTB142JC  
-28  
-13  
mA  
Output Current  
DC Current Gain  
-0.5  
IO(off)  
Gl  
μA VCC = -50V, VI = 0V  
DDTB122LC  
DDTB142JC  
56  
56  
⎯
⎯
VO = -5V, IO = -50mA  
Gain-Bandwidth Product*  
200  
MHz  
fT  
⎯
⎯
VCE = -10V, IE = -5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1- Only Types  
Characteristic  
Symbol  
BVCBO  
BVCEO  
Min  
-50  
-40  
Typ  
⎯
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
V
V
⎯
⎯
IC = -50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
⎯
IC = -1mA  
IE = -50μA  
IE = -50μA  
DDTB122TC  
DDTB142TC  
-5  
V
BVEBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
Collector Cutoff Current  
-0.5  
⎯
μA VCB = -50V  
μA VEB = -4V  
DDTB122TC  
DDTB142TC  
⎯
⎯
-0.5  
-0.5  
Emitter Cutoff Current  
IEBO  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
-0.3  
V
VCE(sat)  
hFE  
⎯
IC = -50mA, IB = -2.5mA  
IC = -5mA, VCE = -5V  
DDTB122TC  
DDTB142TC  
100  
100  
250  
250  
600  
600  
⎯
Gain-Bandwidth Product*  
200  
MHz  
fT  
⎯
⎯
VCE = -10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Power Derating Curve  
DDTB (LO-R1) C  
© Diodes Incorporated  
DS30403 Rev. 6 - 2  
2 of 3  
www.diodes.com  
Ordering Information (Note 4)  
Packaging  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DDTB122LC-7-F  
DDTB142JC-7-F  
DDTB122TC-7-F  
DDTB142TC-7-F  
Notes:  
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
XXX = Product Type Marking Code, See Table on Page 1  
YM = Date Code Marking  
XXX  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DDTB (LO-R1) C  
© Diodes Incorporated  
DS30403 Rev. 6 - 2  
3 of 3  
www.diodes.com  

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