DDTC115EE-7 [DIODES]
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR; NPN预偏置小信号SOT -523表面贴装晶体管型号: | DDTC115EE-7 |
厂家: | DIODES INCORPORATED |
描述: | NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR |
文件: | 总3页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DDTC (R1 = R2 SERIES) E
NPN PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available
(DDTA)
A
OUT
SOT-523
·
Built-In Biasing Resistors, R1 = R2
Dim Min Max Typ
C
B
TOP VIEW
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
Mechanical Data
GND
IN
G
·
·
·
·
Case: SOT-523, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
H
¾
¾
0.50
K
J
M
N
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
L
D
·
·
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 2)
K
L
OUT
M
N
a
·
·
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
R1
IN
0°
8°
¾
R2
P/N
R1, R2 (NOM) MARKING
All Dimensions in mm
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
2.2KW
4.7KW
10KW
22KW
47KW
100KW
N04
N08
N13
N17
N20
N24
GND
OUT
IN
GND
SCHEMATIC DIAGRAM
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
50
V
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
-10 to +12
-10 to +30
-10 to +40
-10 to +40
-10 to +40
-10 to +40
VIN
V
Output Current
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
100
100
50
IO
mA
30
100
20
Pd
mW
°C/W
°C
Power Dissipation
150
833
RqJA
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Tj, TSTG
-55 to +150
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
DS30313 Rev. 3 - 2
1 of 3
DDTC (R1 = R2 SERIES) E
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
VCC = 5V, IO = 100mA
O = 0.3V, IO = 20mA, DDTC123EE
Vl(off)
0.5
1.1
¾
V
VO = 0.3V, IO = 20mA, DDTC143EE
VO = 0.3V, IO = 10mA, DDTC114EE
VO = 0.3V, IO = 5mA, DDTC124EE
VO = 0.3V, IO = 2mA, DDTC144EE
VO = 0.3V, IO = 1mA, DDTC115EE
Input Voltage
V
3
Vl(on)
¾
¾
1.9
0.1
IO/Il =10mA/0.5mA, DDTC123EE
IO/Il =10mA/0.5mA, DDTC143EE
IO/Il =10mA/0.5mA, DDTC114EE
IO/Il =10mA/0.5mA, DDTC124EE
IO/Il =10mA/0.5mA, DDTC144EE
IO/Il =5mA/0.25mA, DDTC115EE
VO(on)
0.3
V
Output Voltage
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
3.8
1.8
0.88
VI = 5V
Il
Input Current
¾
¾
¾
¾
¾
mA
0.36
0.18
0.15
VCC = 50V, VI = 0V
IO(off)
Output Current
DC Current Gain
0.5 mA
V
O = 5V, IO = 20mA
DDTC123EE
DDTC143EE
DDTC114EE
DDTC124EE
DDTC144EE
DDTC115EE
20
20
30
56
68
82
VO = 5V, IO = 10mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
VO = 5V, IO = 5mA
Gl
¾
¾
Input Resistor (R1) Tolerance
Resistance Ratio
DR1
-30
0.8
¾
+30
1.2
%
¾
¾
R2/R1
1
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
250
¾
MHz
* Transistor - For Reference Only
(Note 2)
Ordering Information
Device
Packaging
SOT-523
SOT-523
SOT-523
SOT-523
SOT-523
SOT-523
Shipping
DDTC123EE-7
DDTC143EE-7
DDTC114EE-7
DDTC124EE-7
DDTC144EE-7
DDTC115EE-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code (See Page 1, e.g. N04 = DDTC123EE)
YM = Date Code Marking
Y = Year ex: N = 2002
XXXYM
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30313 Rev. 3 - 2
2 of 3
DDTC (R1 = R2 SERIES) E
TYPICAL CURVES - DDTC143EE
1
250
200
150
100
I /I = 10
C
B
0.1
75°C
25°C
-25°C
0.01
50
0
0.001
-50
0
50
100
150
10
40
20
0
30
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1000
5
4
IE = 0mA
VCE = 10
75°C
100
25°C
3
2
-25°C
10
1
0
1
0
10
15
30
25
5
20
1
10
100
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC CURRENT GAIN
10
100
VO = 0.2
75°C
25°C
10
-25°C
-25°C
75°C
1
1
25°C
0.1
0.01
1
6
7
8
9
0
1
2
3
4
5
10
0
10
20
30
40
50
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
DS30313 Rev. 3 - 2
3 of 3
DDTC (R1 = R2 SERIES) E
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