首页 |元器件品牌

DDTD122LU_2 [DIODES]

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR; NPN预偏置500毫安表面贴装晶体管
DDTD122LU_2
型号： DDTD122LU_2
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
NPN预偏置500毫安表面贴装晶体管

晶体 晶体管
文件： 总3页 (文件大小：109K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
DDTD (LO-R1) U  
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Types Available (DDTB)  
Built-In Biasing Resistors  
Lead Free/RoHS Compliant (Note 2)  
"Green" Device, Note 3 and 4  
A
SOT-323  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
B
Mechanical Data  
•
•
Case: SOT-323  
0.65 Nominal  
G
H
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 4. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
Marking Information: See Table Below & Page 3  
Ordering Information: See Page 3  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
J
K
J
•
•
•
•
M
K
L
0.90  
0.25  
0.10  
0°  
L
D
E
M
α
•
•
•
Weight: 0.006 grams (approximate)  
All Dimensions in mm  
OUT  
3
C
P/N  
R1 (NOM)  
0.22KΩ  
0.47KΩ  
0.22KΩ  
0.47KΩ  
R2 (NOM) MARKING  
DDTD122LU  
DDTD142JU  
DDTD122TU  
DDTD142TU  
10KΩ  
10KΩ  
OPEN  
OPEN  
N75  
N76  
N77  
N78  
R1  
B
R2  
E
1
IN  
Schematic and Pin Configuration  
2
GND(0)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Supply Voltage, (3) to (2)  
50  
V
VCC  
VIN  
Input Voltage, (1) to (2)  
Input Voltage, (2) to (1)  
DDTD122LU  
DDTD142JU  
-5 to +6  
-5 to +6  
V
V
DDTD122TU  
DDTD142TU  
5
VEBO (MAX)  
Output Current  
All  
(Note 1)  
(Note 1)  
500  
200  
mA  
mW  
°C/W  
°C  
IC  
Power Dissipation  
Pd  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
625  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to  
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DDTD (LO-R1) U  
© Diodes Incorporated  
DS30398 Rev. 6 - 2  
1 of 3  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1, R2 Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
VCC = 5V, IO = 100μA  
DDTD122LU  
DDTD142JU  
0.3  
0.3  
V
Vl(off)  
⎯
⎯
Input Voltage  
VO = 0.3V, IO = 20mA  
VO = 0.3V, IO = 20mA  
DDTD122LU  
DDTD142JU  
2.0  
2.0  
V
V
Vl(on)  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Voltage  
Input Current  
0.3V  
VO(on)  
Il  
IO(off)  
Gl  
IO/Il = 50mA/2.5mA  
VI = 5V  
DDTD122LU  
DDTD142JU  
28  
13  
mA  
Output Current  
DC Current Gain  
0.5  
μA VCC = 50V, VI = 0V  
DDTD122LU  
DDTD142JU  
56  
56  
⎯
⎯
⎯
⎯
VO = 5V, IO = 50mA  
Gain-Bandwidth Product*  
200  
MHz  
fT  
⎯
VCE = 10V, IE = 5mA, f = 100MHz  
* Transistor - For Reference Only  
Electrical Characteristics @TA = 25°C unless otherwise specified  
R1-Only, R2-Only Types  
Characteristic  
Symbol  
Min  
Typ  
Max Unit  
Test Condition  
Collector-Base Breakdown Voltage  
50  
V
V
BVCBO  
⎯
⎯
⎯
IC = 50μA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
40  
5
BVCEO  
BVEBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
IC = 1mA  
IE = 50μA  
IE = 50μA  
DDTD122TU  
DDTD142TU  
V
⎯
Collector Cutoff Current  
0.5  
⎯
μA VCB = 50V  
μA VEB = 4V  
DDTD122TU  
DDTD142TU  
⎯
⎯
0.5  
0.5  
Emitter Cutoff Current  
IEBO  
Collector-Emitter Saturation Voltage  
0.3  
V
VCE(sat)  
⎯
IC = 50mA, IB = 2.5mA  
DDTD122TU  
DDTD142TU  
100  
100  
250  
250  
600  
600  
DC Current Transfer Ratio  
Gain-Bandwidth Product*  
* Transistor - For Reference Only  
hFE  
fT  
⎯
IC = 5mA, VCE = 5V  
200  
MHz  
⎯
⎯
VCE = 10V, IE = -5mA, f = 100MHz  
DDTD (LO-R1) U  
© Diodes Incorporated  
DS30398 Rev. 6 - 2  
2 of 3  
www.diodes.com  
250  
200  
150  
100  
50  
0
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (  
°C)  
Fig. 1 Power Derating Curve  
Ordering Information (Note 4 & 5)  
Packaging  
SOT-323  
SOT-323  
SOT-323  
SOT-323  
Shipping  
Device  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
DDTD122LU-7-F  
DDTD142JU-7-F  
DDTD122TU-7-F  
DDTD142TU-7-F  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
NXX = Product Type Marking Code  
See Page 1 Table  
YM = Date Code Marking  
Y = Year ex: T = 2006  
NXX  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DDTD (LO-R1) U  
© Diodes Incorporated  
DS30398 Rev. 6 - 2  
3 of 3  
www.diodes.com  

相关型号：

DDTD122TC

 NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TC-7

 Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TC-7-F

 NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TU

 NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD122TU-13

 Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TU-7

 Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD122TU-7-F

 NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES

DDTD123EC

 NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTD123EC-13

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES

DDTD123EC-7

 NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DIODES

DDTD123EC-7-F

 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
DIODES

DDTD123EU

 NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR
DIODES
©2020 ICPDF网 联系我们和版权申明