DDTD143EC-13 [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3;型号: | DDTD143EC-13 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 |
文件: | 总3页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC
DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC
DDTD (xxxx) C
NPN PRE-BIASED 500 mA SOT-23
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
A
SOT-23
Min
3
OUT
Built-In Biasing Resistors, R1, R2
Dim
A
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.00
0.61
0.110
8°
Available in Lead Free/RoHS Compliant Version (Note 2)
TOP VIEW
B
C
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.89
0.45
0.085
0°
B
IN
E
1
GND
2
D
G
Mechanical Data
·
·
C
D
H
Case: SOT-23
E
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
M
G
H
J
L
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
J
Terminals: Solderable per MIL-STD-202, Method 208
K
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 4, on Page 3
L
M
·
Marking: Date Code and Marking Code
(See Table Below & Page 3)
a
OUT (3)
R1
All Dimensions in mm
(2) IN
·
·
Ordering Information (See Page 3)
Weight: 0.008 grams (approximate)
R2
GND (1)
P/N
R1 (NOM) R2 (NOM) MARKING
1K
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
1K
2.2K
4.7K
10K
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
2.2K
4.7K
10K
0.22K
1K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
2.2K
3.3K
2.2K
4.7K
10K
0
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
VCC
Supply Voltage, (3) to (1)
Input Voltage, (2) to (1)
50
V
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
VIN
V
Input Voltage, (1) to (2)
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
VEBO (MAX)
5
V
IC
Pd
Output Current
All
500
200
mA
mW
°C/W
°C
Power Dissipation
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
625
-55 to +150
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30384 Rev. 3 - 2
1 of 3
DDTD (xxxx) C
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1, R2 Types
Characteristic
Symbol
Min
Typ
Max Unit
Test Condition
DDTD113EC
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Vl(off)
VCC = 5V, IO = 100mA
¾
¾
V
Input Voltage
V
V
O = 0.3V, IO = 20mA
O = 0.3V, IO = 20mA
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 20mA
Vl(on)
VO(on)
Il
¾
¾
¾
¾
¾
¾
¾
¾
¾
V
V
IO/Il = -50mA/-2.5mA
Output Voltage
Input Current
0.3V
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
7.2
3.8
1.8
0.88
4.5
7.2
3.6
2.4
VI = 5V
mA
mA
¾
VCC = 50V, VI = 0V
VO = 5V, IO = 50mA
IO(off)
Output Current
DC Current Gain
0.5
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
33
39
47
56
47
56
56
56
Gl
¾
VCE = 10V, IE = 5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
@ TA = 25°C unless otherwise specified
Electrical Characteristics
R1-Only, R2-Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
BVCBO
BVCEO
Min
50
Typ
¾
Max Unit
Test Condition
IC = 50mA
¾
¾
V
V
IC = 1mA
40
¾
I
E = 50mA
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
IE = 50mA
IE = 50mA
BVEBO
¾
5
¾
¾
¾
¾
V
mA
mA
V
IE = 720mA
VCB = 50V
ICBO
Collector Cutoff Current
DDTD123TC
¾
0.5
¾
¾
¾
300
0.5
0.5
0.5
580
DDTD143TC
DDTD114TC
VEB = 4V
IEBO
Emitter Cutoff Current
DDTD114GC
Collector-Emitter Saturation Voltage
DDTD123TC
IC = 50mA, IB = 2.5mA
IC = 5mA, VCE = 5V
VCE(sat)
hFE
¾
0.3
100
100
100
56
250
250
250
¾
600
600
600
¾
DDTD143TC
DC Current Transfer Ratio
¾
DDTD114TC
DDTD114GC
VCE = 10V, IE = -5mA,
f = 100MHz
fT
Gain-Bandwidth Product*
¾
200
¾
MHz
* Transistor - For Reference Only
DS30384 Rev. 3 - 2
2 of 3
www.diodes.com
DDTD (xxxx) C
Ordering Information (Note 3)
Device
Packaging
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
DDTD113EC-7
DDTD123EC-7
DDTD143EC-7
DDTD114EC-7
DDTD122JC-7
DDTD113ZC-7
DDTD123YC-7
DDTD133HC-7
DDTD123TC-7
DDTD143TC-7
DDTD114TC-7
DDTD114GC-7
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DDTD114GC-7-F.
Marking Information
XXX = Product Type Marking Code,
See Table on Page 1
YM = Date Code Marking
Y = Year ex: N = 2002
XXX
M = Month ex: 9 = September
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
Code
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30384 Rev. 3 - 2
3 of 3
DDTD (xxxx) C
www.diodes.com
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