DF10S [DIODES]
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER; 1.0A表面安装玻璃钝化整流桥
| 型号： | DF10S |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DF005S - DF10S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER
Features
·
·
·
Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop, High Current
Capability
DF-S
·
·
·
Surge Overload Rating to 50A Peak
L
Dim
A
Min
7.40
6.20
0.22
0.076
—
Max
7.90
6.50
0.30
0.33
10.40
1.53
8.51
2.60
5.20
1.20
G
Designed for Surface Mount Application
Plastic Material - UL Flammability
Classification 94V-0
B
C
A B
D E
·
UL Listed Under Recognized Component Index,
File Number E94661
D
E
G
H
1.02
8.13
2.40
5.00
1.00
Mechanical Data
H
C
·
·
Case: Molded Plastic
J
J
Terminals: Solder Plated Leads, Solderable
per MIL-STD-202, Method 208
K
K
L
·
·
·
·
Polarity: As marked on Case
Approx. Weight: 0.38 grams
Mounting Position: Any
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF
005S
DF
DF
02S
DF
04S
DF
06S
DF
08S
DF
10S
Characteristic
Symbol
Unit
01S
100
70
VRMM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
200
140
400
600
420
800
560
1000
700
V
VRMS
IO
RMS Reverse Voltage
35
280
1.0
V
A
Average Forward Rectified Current
@ TA = 40°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
50
A
Forward Voltage (per element)
@ IF = 1.0A
VFM
IRM
1.1
V
Peak Reverse Current at Rated
DC Blocking Voltage (per element)
@ TA = 25°C
@ TA = 125°C
10
500
µA
I2t Rating for Fusing (t<8.3ms)
I2t
Cj
10.4
25
A2s
pF
Typical Junction Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient
(Note 2)
RqJA
40
°C/W
°C
Tj, TSTG
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.
DS17001 Rev. H-2
1 of 2
DF005S-DF10S
1.0
10
60 Hz Resistive or
Inductive load
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.5
0.1
0.01
0
40
100
120
140
0.8
0.4
1.0
1.4
80
0.6
1.2
60
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
10
1
Tj = 25°c
Single half-sine-Wave
(JEDEC Method)
f = 1.0 Mhz
Vsig = 50 mV p-p
50
40
30
20
10
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
Fig. 4 Typ Junction Capacitance (per element)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DS17001 Rev. H-2
2 of 2
DF005S-DF10S
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