DF1506S [DIODES]
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER; 1.5A表面安装玻璃钝化整流桥型号: | DF1506S |
厂家: | DIODES INCORPORATED |
描述: | 1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DF15005S - DF1510S
1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER
Features
·
·
·
Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop, High Current
Capability
DF-S
·
·
·
Surge Overload Rating to 50A Peak
Dim
A
Min
7.40
6.20
0.22
0.076
¾
Max
7.90
6.50
0.30
0.33
10.40
1.53
8.51
3.40
5.20
1.20
L
G
Designed for Surface Mount Application
Plastic Material - UL Flammability
Classification Rating 94V-0
B
C
·
UL Listed Under Recognized Component Index,
File Number E94661
A B
D E
D
E
G
H
1.02
8.13
2.40
5.00
1.00
Mechanical Data
H
C
·
·
Case: Molded Plastic
J
J
Terminals: Solder Plated Leads, Solderable
per MIL-STD-202, Method 208
K
K
L
·
·
·
·
Polarity: As Marked on Case
Weight: 0.38 grams (approx.)
Mounting Position: Any
All Dimensions in mm
Marking: Type Number
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF
DF
DF
DF
DF
15005S 1501S 1502S 1504S 1506S 1508S 1510S
DF
DF
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
580
1000
700
V
VR(RMS)
IO
RMS Reverse Voltage
280
1.5
V
A
Average Forward Rectified Current
@ TA = 40°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
50
A
Forward Voltage (per element)
@ IF = 1.5A
VFM
IRM
1.1
V
Peak Reverse Current at rated
DC blocking voltage (per element)
@ TA = 25°C
@ TA = 125°C
10
500
µA
I2t Rating for Fusing (t<8.3ms)
I2t
Cj
10.4
25
A2s
pF
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance, Junction to Ambient
(Note 2)
RqJA
40
°C/W
°C
Tj, TSTG
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.
2
DS17002 Rev. D-2
1 of 2
DF15005S-DF1510S
2.0
10
60 Hz Resistive or
Inductive load
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.5
1.0
1.0
0.1
0.5
0.01
0
40
100
120
140
0.8
0.4
1.0
1.4
80
0.6
1.2
60
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
10
1
Tj = 25°c
Single half-sine-Wave
(JEDEC Method)
f = 1.0 Mhz
Vsig = 50 mV p-p
50
40
30
20
10
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
Fig. 4 Typ Junction Capacitance (per element)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DS17002 Rev. D-2
2 of 2
DF15005S-DF1510S
相关型号:
DF1506S-E3
DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode
VISHAY
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