DKR200AB60 [DIODES]
DIODE MODULE( NON-ISOLATED TYPE ); 二极管模块（非绝缘型）
| 型号： | DKR200AB60 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DIODE MODULE( NON-ISOLATED TYPE ) |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
（NON-ISOLATED TYPE）
DIODE MODULE
DKR200AB60
dual diode module designed for high
DKR200AB60 is a high speed (fast recovery)
power switching application. is suitable for high frequency application
DKR200AB60
requiring low loss and high speed control.
●
●
rr
High Speed Diode t ≦200ns
(AV)
９２．０±０．１�
８０．０±０．３�
３５．０±０．２�
IF =100A（each device）
● High Surge Capability
（Applications）
Switching Power Supply, Inverter Welding Power Supply
Power Supply for Telecommunication
�
２－ M６�
depth８mm
２－ �
２．０�
２６．５�
２６．５�
A
A
MARKING AREA
Tc point（depth 2mm）�
K
Unit：㎜
■Maximum Ratings
（Tj＝25℃ unless otherwise specified）
Ratings
Symbol
Item
Unit
DKR200AB60
VRRM
Repetitive peak reverse Voltage
D.C. Reverse Voltage
600
480
V
V
VR（DC）
Symbol
Item
Condition
Ratings
Unit
Per module
Forward
C
D.C. T ＝133℃
200
IF
A
Current
Per leg
100
1
Z
／cycle, 60H , Peak value. non-repetitive
3600
2
IFSM
Surge Forward Current
A
1
Z
／cycle, 50H , Peak value. non-repetitive
3200
2
2
2
2
I
I t (for fusing)
Value for one cycle surge current
t
54000
A S
Operating Junction Temperature
Storage Temperature
Tj
－40 to ＋150
℃
℃
Tstg
－40 to ＋125
Recommended Value 25-40
Recommended Value 2.5-3.9
Recommended Value 10-14
Recommended Value 1.0-1.4
Recommended Value 25-40
Recommended Value 2.5-3.9
Typical Value
48
（㎏f･B）
N･m
Mounting
（M6）
4.7
15
（㎏f･B）
N･m
Mounting
Torque
Mounting
（M4）
1.5
48
（㎏f･B）
N･m
Terminal
（M6）
4.7
80
Mass
g
■Electrical Characteristics
Ratings
Min. Typ. Max.
200
Symbol
Item
Condition
Unit
Repetitive Peak Reverse Current
Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
D
RRM
IRRM
VFM
Tj＝125℃, V =V
mA
V
F
I ＝200A, Inst.measurement
1.4
F
trr
I ＝200A，ーdi/dt＝200A/μs
100 200
ns
1
Rth（j-c）
Junction to case, ／module
0.063 ℃/W
2
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DKR200AB60
Reverse Recovery Characteristics
Forward Characteristics
１０００�
１０００�
Trr
Trr
�
１００
１００�
Irr
Irr
�
１０
Max
Ｔｊ=２５℃�
Qrr
Qrr
１０�
１�
�
１
Ｔｊ=２５℃�
-di/dt=200[A/μs]
Ｔｊ=１５０℃�
�
�
０．１�
０� ５０� １００� １５０� ２００� 2５０� 3００� 3５０� 4００�
０�
０．５�
１�
１．５�
２�
２．５�
Forward Current I（F A）�
Forward Voltage Drop V（F V）�
�
Transient Thermal Impedance
Reverse Recovery Characteristics
1.0Eー０�
１０００�
IF=２00[A]
Trr
�
1.0Eー１�
1.0Eー２�
１００
Irr
Trr
Irr
�
１０
Qrr
�
1.0Eー３�
1.0Eー４�
１
Qrr
Max.
Junction to Case
０．１�
Ｔｊ=２５℃�
Ｔｊ=１５０℃�
1.0Eー５�
�
�
０．０１�
1.0Eー６� 1.0Eー５� 1.0Eー４� 1.0Eー３� 1.0Eー２� 1.0Eー１� 1.0E０� 1.0E１�
１０�
２０�
５０� １００� ２００�
５００� １０００�
Critical rate of rise of on-state current di/d（t Aμ/ s）�
Time t（sec.）�
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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