DMC1030UFDB_15 [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC1030UFDB_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC1030UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
Low On-Resistance
ID MAX
Device
V(BR)DSS
RDS(ON) max
Low Input Capacitance
TA = +25°C
Low Profile, 0.6mm Max Height
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
34mΩ @ VGS = 4.5V
40mΩ @ VGS = 2.5V
50mΩ @ VGS = 1.8V
70mΩ @ VGS = 1.5V
59mΩ @ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
215mΩ @ VGS = -1.5V
ESD Protected Gate
Q1
N-Channel
12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Q2
P-Channel
-12V
Mechanical Data
•
•
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Description
•
•
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
e4
MIL-STD-202, Method 208
•
•
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Applications
•
•
•
Load Switch
D2
D1
Power Management Functions
Portable Power Adaptors
U-DFN2020-6
Type B
S2
G2
G2
G1
D2
D1
D1
D2
Gate Protection
Diode
Gate Protection
Diode
S1
G1
S2
S1
ESD PROTECTED
Pin1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC1030UFDB -7
DMC1030UFDB -13
U-DFN2020-6 Type B
U-DFN2020-6 Type B
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M
D3
Y
M = Month (ex: 9 = September)
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
DMC1030UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Units
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
12
±8
-12
±8
V
V
VDSS
VGSS
Steady
State
5.1
4.1
-3.9
-3.1
T
A = +25°C
A
A
ID
ID
TA = +70°C
Continuous Drain Current (Note 5) VGS = 4.5V
6.6
5.3
-5.0
-4.0
T
T
A = +25°C
A = +70°C
t < 5s
-1.7
-25
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
2
A
A
IS
35
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Value
Units
Steady State
1.36
1.89
92
Total Power Dissipation (Note 5)
W
t < 5s
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 5)
Rθ
JA
66
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
18
Rθ
JC
-55 to +150
TJ, TSTG
Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
12
—
—
—
1.0
±10
V
BVDSS
IDSS
—
—
—
VGS = 0V, ID = 250μA
μA
μA
V
DS = 12V, VGS = 0V
IGSS
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
17
20
24
28
0.7
1
V
mꢀ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
34
40
50
70
1.2
V
V
GS = 4.5V, ID = 4.6A
GS = 2.5V, ID = 4.2A
Static Drain-Source On-Resistance
VGS = 1.8V, ID = 3.8A
V
V
GS = 1.5V, ID = 1.5A
GS = 0V, IS = 4.8A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1003
132
115
11.3
12.2
23.1
1.3
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS = 6V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
V
V
DS = 0V, VGS = 0V, f = 1MHz
DS = 10V, ID = 6.8A
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Qg
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
1.5
Turn-On Delay Time
4.4
Turn-On Rise Time
7.4
V
DD = 6V, VGS = 4.5V,
Turn-Off Delay Time
18.8
4.9
RL = 1.1ꢀ, RG = 1ꢀ
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
7.6
I
S = 5.4A, dI/dt = 100A/μs
Qrr
0.9
IS = 5.4A, dI/dt = 100A/μs
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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DMC1030UFDB
Document number: DS36933 Rev.1 - 2
DMC1030UFDB
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
= 4.5V
GS
V
= 1.8V
GS
V
= 5.0V
DS
V
= 1.5V
V
= 4.0V
GS
GS
V
= 2.0V
GS
V
= 3.5V
GS
V
= 3.0V
GS
6
6
T
= 150°C
A
T
= 85°C
A
4
4
T
= 125°C
A
V
= 1.0V
GS
V
= 0.9V
T = 25°C
A
GS
2
2
T
= -55°C
A
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0
0.04
0.03
0.02
0.01
0.00
V
= 4.5V
GS
V
= 1.5V
GS
T
T
= 150°C
A
T
= 125°C
A
V
= 18V
GS
= 85°C
A
T
= 25°C
V
= 2.5V
A
GS
T
= -55°C
A
V
= 4.5V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
0.06
0.05
0.04
0.03
1.8
1.6
1.4
1.2
1
V
= 2.5V
GS
I
= 5.0A
D
V
= 1.8V
V
= 1.8V
GS
GS
I
= 3.0A
I
= 3.0A
D
D
0.8
0.6
0.4
0.2
0
V
= 2.5V
GS
I
= 5.0A
0.02
0.01
0
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°C)
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DMC1030UFDB
Document number: DS36933 Rev.1 - 2
DMC1030UFDB
1
0.8
0.6
0.4
0.2
0
20
18
16
14
12
10
8
I
= 1mA
D
T
= 150°C
A
I
= 250µA
D
T
A
= 125°C
A
T
= 25°C
A
6
T
= 85°C
T
= -55°C
4
A
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
C)
VSD, SOURCE-DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (
°
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
8
6
4
2
0
f = 1MHz
C
iss
1000
V
I
= 10V
DS
C
= 6.8A
oss
D
100
C
rss
10
0
2
4
6
8
10
12
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Gate Charge
Figure 9 Typical Junction Capacitance
100
10
R
DS(ON)
Limited
DC
P
= 10s
W
1
0.1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
T
T
= 150°C
J(max)
P
= 100µs
W
= 25°C
A
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA Safe Operation Area
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DMC1030UFDB
Document number: DS36933 Rev.1 - 2
DMC1030UFDB
Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
V
BVDSS
IDSS
—
—
—
—
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
-1.0
±10
μA
μA
V
V
DS = -12V, VGS = 0V
GS = ±8V, VDS = 0V
IGSS
—
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.4
—
—
37
-1
59
V
mꢀ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.6A
48
81
—
V
V
V
V
GS = -2.5V, ID = -3.1A
GS = -1.8V, ID = -2.6A
GS = -1.5V, ID = -0.5A
GS = 0V, IS = -3.7A
Static Drain-Source On-Resistance
69
115
215
-1.2
—
88
—
Diode Forward Voltage
-0.7
—
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1028
285
254
19.6
13
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS = -6V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Qg
20.8
1.8
V
V
DS = -10V, ID = -4.7A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
4.5
Turn-On Delay Time
5.6
Turn-On Rise Time
12.8
30.7
25.4
31.6
7.8
DD = -6V, VGS = -4.5V,
Turn-Off Delay Time
RL = 1.6ꢀ, RG = 1ꢀ
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
I
I
S = -3.6A, dI/dt = 100A/μs
S = -3.6A, dI/dt = 100A/μs
Qrr
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
20
20
18
16
14
12
10
8
V
= -4.5V
GS
V
= -2.0V
V
= -5.0V
GS
DS
18
16
14
12
10
8
V
= -4.0V
GS
V
= -3.0V
GS
V
= -3.5V
GS
V
= -1.8V
GS
V
= -1.5V
GS
6
6
T
= 150°C
A
V
= -1.0V
GS
T
= 85°C
4
4
A
T
= 125°C
A
T
= 25°C
A
2
2
T
= -55°C
V
= -0.9V
A
GS
0
0
0
0
0.5
1
1.5
2
2.5
3
0.5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
1
1.5
2
2.5
3
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
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DMC1030UFDB
Document number: DS36933 Rev.1 - 2
DMC1030UFDB
0.06
0.05
V
= -4.5V
GS
T
= 150°C
A
V
= -1.8V
GS
T
= 125°C
A
T
= 85°C
A
V
= -1.5V
GS
V
= -2.5V
0.04
0.03
0.02
GS
T
= 25°C
A
V
= -4.5V
GS
T
= -55°C
A
0.001
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 15 Typical On-Resistance vs.
Drain Current and Temperature
2
1.8
1.6
1.4
1.2
1
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
I
= -1.8V
GS
= -3.0A
D
V
I
= -2.5V
GS
= -5.0A
D
V
I
= -2.5V
GS
= -5.0A
D
V
I
= -1.8V
GS
0.8
0.6
0.4
0.2
0
= -3.0A
D
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
0
25
50
75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
°
TJ, JUNCTION TEMPERATURE (
°
Figure 17 On-Resistance Variation with Temperature
Figure 16 On-Resistance Variation with Temperature
1
0.8
0.6
0.4
0.2
0
20
18
16
14
12
10
8
-I = 1mA
D
-I = 250µA
D
T = 150°C
A
T = 125°C
A
6
T = 25°C
A
T = 85°C
A
4
T = -55°C
A
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 18 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 19 Diode Forward Voltage vs. Current
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Document number: DS36933 Rev.1 - 2
DMC1030UFDB
10000
1000
100
f = 1MHz
C
C
iss
V
I
= -10V
DS
oss
= -4.7A
D
C
rss
10
100
10
0
5
10
15
20
25
0
2
4
6
8
10
12
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 20 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 21 Gate-Charge Characteristics
R
DS(on)
Limited
DC
= 10s
P
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
0.01
T
= 150°C
P
= 100µs
J(max)
W
T
= 25°C
A
V
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22 SOA Safe Operation Area
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * Rθ
JA
RθJA = 159°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 23 Transient Thermal Resistance
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DMC1030UFDB
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
U-DFN2020-6
Type B
A
A3
Dim
A
A1
A3
b
Min
Max
Typ
SEATING PLANE
0.545 0.605 0.575
A1
0
⎯
0.05 0.02
0.13
D
⎯
Pin#1 ID
0.20 0.30 0.25
1.95 2.075 2.00
D2
D
d
D2
e
0.45
0.50 0.70 0.60
0.65
⎯
⎯
z
d
⎯
⎯
E
E2
E
E2
f
L
z
1.95 2.075 2.00
0.90 1.10 1.00
f
f
0.15
0.25 0.35 0.30
0.225
⎯
⎯
L
⎯
⎯
e
b
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions Value (in mm)
G
X2
Z
G
G1
X1
X2
Y
1.67
0.20
0.40
1.0
0.45
0.37
0.70
0.65
G1
X1
Y1
C
G
Y1
Z
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Document number: DS36933 Rev.1 - 2
DMC1030UFDB
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
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April 2014
© Diodes Incorporated
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
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