DMC6070LND [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC6070LND |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总12页 (文件大小：634K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC6070LND
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
Low On-Resistance
ID max
Device
Q1
V(BR)DSS
RDS(ON) max
TA = +25°C
Low Input Capacitance
Fast Switching Speed
3.1A
2.7A
-2.4A
-1.8A
85mΩ @ VGS = 10V
120mΩ @ VGS = 4.5V
150mΩ @ VGS = -10V
250mΩ @ VGS = -4.5V
60V
Low Input/Output Leakage
Complementary Pair MOSFET
Q2
-60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: POWERDI®3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Applications
Power Management Functions
Analog Switch
Equivalent Circuit
POWERDI3333-8
D1
D2
Pin 1
S1
G1
S2
G2
G1
G2
D1
D1
D2
D2
S1
S2
Top View
Bottom View
N-Channel MOSFET
P-Channel MOSFET
Ordering Information (Note 4)
Part Number
DMC6070LND-7
DMC6070LND-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
C6A = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 for 2015)
WW = Week Code (01 to 53)
C6A
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
Maximum Ratings Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
3.1
2.5
A
A
ID
ID
Continuous Drain Current (Note 5) VGS = 10V
3.9
3.1
t<10s
Maximum Body Diode Forward Current (Note 5)
2
A
A
IS
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
15
IDM
Maximum Ratings Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
-60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
-2.4
-1.9
A
A
ID
ID
Continuous Drain Current (Note 5) VGS = -10V
-2.9
-2.3
t<10s
Maximum Body Diode Forward Current (Note 5)
-2
A
A
IS
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
-12
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.4
Unit
W
Total Power Dissipation (Note 5)
PD
Steady state
t<10s
91
60
32
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
BVDSS
IDSS
1
VGS = 0V, ID = 250μA
μA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = 60V, VGS = 0V
VGS = ±16V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1
3
85
120
V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.5A
VGS = 4.5V, ID = 0.5A
VDS = 5V, ID = 1.5A
VGS = 0V, IS = 3A
60
72
3.7
0.7
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
S
V
|Yfs|
VSD
1.2
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
731
34
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
23
Reverse Transfer Capacitance
Gate Resistance
1.3
11.5
5.2
2.1
1.5
9.6
11
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Qg
Qg
VDS = 30V, ID = 3A
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 30V,
RG = 50Ω, RL = 20Ω
61
Turn-Off Delay Time
tD(OFF)
tF
21
Turn-Off Fall Time
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
10
8
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 5.0V
VGS = 10.0V
VGS = 4.5V
VGS = 3.5V
VGS = 4.0V
6
4
85oC
25oC
125oC
150oC
2
VGS = 3.0V
VGS = 2.8V
-55oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.15
0.12
0.09
0.06
0.03
0
VGS = 4.0V
ID = 1.5A
ID = 0.5A
VGS = 10.0V
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
1.8
1.6
1.4
1.2
1
0.2
0.15
0.1
VGS = 4.5V
150oC
125oC
VGS = 10.0V, ID = 5.0A
85oC
25oC
VGS = 4.5V, ID = 2.0A
0.05
0
-55oC
0.8
0.6
0
2
4
6
8
10
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
50
75
100 125 150
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
3
2.5
2
0.15
0.12
0.09
0.06
0.03
0
ID = 250µA
VGS = 4.5V, ID = 2.0A
ID = 1mA
1.5
1
VGS = 10.0V, ID = 5.0A
0.5
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS = 0V
10000
1000
100
10
8
f=1MHz
Ciss
6
4
TA = 85oC
TA = 125oC
Coss
TA = 25oC
2
TA = 150oC
TA = -55oC
Crss
10
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
RDS(ON) Limited
1
6
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
PW =10s
DC
0.1
4
VDS = 30V, ID = 3A
TJ(Max)=150℃
TC=25℃
Single Pulse
DUT on 1*MRP
board
0.01
0.001
2
VGS=10V
0
0.1
1
10
100
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA(t)=r(t) * RθJA
RθJA=134℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
Electrical Characteristics Q2 P-CHANNEL(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
V
-1
BVDSS
IDSS
VGS = 0V, ID = -250μA
μA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = -60V, VGS = 0V
VGS = ±16V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
-3
150
250
V
VGS(TH)
RDS(ON)
VDS = VGS, ID = -250μA
VGS = -10V, ID = -1A
VGS = -4.5V, ID = -0.5A
VDS = -5V, ID = -1A
VGS = 0V, IS = -2A
115
170
2.8
-0.7
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
S
V
|Yfs|
VSD
-1.2
612
36
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
26
Reverse Transfer Capacitance
Gate Resistance
13
VDS = 0V, VGS = 0V, f = 1MHz
8.9
4.3
1.4
1.7
7.6
11.6
79.8
37.8
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
Qg
VDS = -30V, ID = -2A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = -10V, VDS = -30V,
RG = 50Ω, ID = -1A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
10
8
10.0
8.0
6.0
4.0
2.0
0.0
V
= -4.5V
GS
VDS=- 5.0V
V
= -10V
GS
V
= -4.0V
GS
6
V
= -3.5V
GS
4
125oC
150oC
V
= -2.5V
85oC
25oC
V
= -2.8V
GS
2
GS
V
= -3.0V
GS
-55oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 15. Typical Transfer Characteristic
VDS , DRAIN -SOURCE VOLTAGE (V)
Figure 14 Typical Output Characteristics
1
0.5
0.4
0.3
0.2
0.1
I
= -1.0A
0.9
0.8
D
0.7
0.6
0.5
0.4
V
= -4.5V
GS
V
= -10V
0.3
0.2
0.1
GS
I
= -0.5mA
D
0
0
0
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 17 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN SOURCE CURRENT (A)
Figure 16 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
0.4
0.3
0.2
0.1
0
2
VGS= -4.5V
1.8
1.6
1.4
1.2
1
150oC
VGS = -10.0V, ID = -5.0A
125oC
85oC
25oC
VGS = -4.5V, ID = -2.0A
-55oC
0.8
0.6
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with Temperature
Figure 18. Typical On-Resistance vs. Drain Current and
Temperature
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DMC6070LND
0.3
0.25
0.2
3
2.5
2
ID = -1mA
VGS = -4.5V, ID = -2.0A
ID = -250µA
0.15
0.1
1.5
1
VGS = -10.0V, ID = -5.0A
0.05
0
0.5
0
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 20. On-Resistance Variation with Temperature
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 21. Gate Threshold Variation vs. Junction
Temperature
10
10000
1000
100
f=1MHz
8
6
4
2
0
Ciss
VDS = -30V, ID = -2A
Coss
Crss
10
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
Figure 23. Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
100
10
RDS(ON) Limited
1
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
PW =10s
DC
0.1
TJ (Max)=150℃
TC=25℃
Single Pulse
DUT on 1*MRP
board
0.01
0.001
VGS=10V
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
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DMC6070LND
Document number: DS38051 Rev. 2 - 2
DMC6070LND
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=134℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
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DMC6070LND
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI3333-8
(Type UXB)
A
D
D1
A1
POWERDI3333-8
(Type UXB)
Dim Min Max Typ
E1 E
A
0.75 0.85 0.80
A1 0.00 0.05
--
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
c
D1 2.95 3.15 3.05
D2 0.10 0.35 0.23
L
E
3.20 3.40 3.30
E1 2.95 3.15 3.05
E2 0.10 0.30 0.20
D2
e
L
a
0.65
0.35 0.55 0.45
0° 12° 10°
E2
All Dimensions in mm
L
b
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI3333-8
(Type UXB)
X1
Dimensions Value (in mm)
Y
C
X
0.650
0.420
2.370
0.730
3.500
Y1
X1
Y
Y
Y1
X
C
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Document number: DS38051 Rev. 2 - 2
DMC6070LND
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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