DMG1029SV-7 [DIODES]
Small Signal Field-Effect Transistor, 0.37A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6;![DMG1029SV-7](http://pdffile.icpdf.com/pdf2/p00232/img/icpdf/DMG1029SV-7_1360681_icpdf.jpg)
型号: | DMG1029SV-7 |
厂家: | ![]() |
描述: | Small Signal Field-Effect Transistor, 0.37A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 开关 光电二极管 晶体管 |
文件: | 总9页 (文件大小:286K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DMG1029SV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D max
Device
V(BR)DSS
RDS(ON) max
TA = +25°C
Low Gate Threshold Voltage
Low Input Capacitance
1.7Ω @ VGS = 10V
3Ω @ VGS = 4.5V
4Ω @ VGS = -10V
6Ω @ VGS = -4.5V
500mA
Q1
60V
Fast Switching Speed
400mA
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-360mA
-310mA
Q2
-60V
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SOT563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.027 grams (approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT563
D1
G2
S2
Q2
Q1
S1
G1
D2
Top View
Bottom View
Ordering Information (Note 4 & 5)
Part Number
DMG1029SV-7
DMG1029SVQ-7
Compliance
Standard
Automotive
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
GA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
GA1
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
VGSS
Steady
State
500
400
T
A = +25°C
mA
ID
TA = +70°C
Continuous Drain Current (Note 7) VGS = 10V
Pulsed Drain Current (Note 7)
620
480
T
T
A = +25°C
A = +70°C
t<10s
mA
mA
ID
1000
IDM
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
-60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
VGSS
Steady
State
-360
-280
T
T
A = +25°C
A = +70°C
mA
ID
Continuous Drain Current (Note 7) VGS = -10V
Pulsed Drain Current (Note 7)
-410
-320
T
T
A = +25°C
A = +70°C
t<10s
mA
mA
ID
-650
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
0.45
0.28
281
210
1
TA = +25°C
TA = +70°C
Total Power Dissipation (Note 6)
W
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
R
JA
TA = +25°C
TA = +70°C
Steady state
t<10s
PD
0.62
129
97
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
°C/W
R
JA
-55 to +150
°C
T
J, TSTG
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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© Diodes Incorporated
DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
10
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
nA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
V
V
DS =50V, VGS = 0V
GS = ±5V, VDS = 0V
±50
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
1.3
1.5
—
2.5
1.7
3
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 200mA
VDS = 10V, ID = 200mA
Static Drain-Source On-Resistance
ꢀ
RDS(ON)
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
80
—
mS
V
|Yfs|
VSD
—
1.4
V
GS = 0V, IS = 115mA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
30
4.2
2.9
0.3
0.2
0.08
3.9
3.4
15.7
9.9
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS = 4.5V, VDS = 10V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID = 250mA
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 30V, VGS = 10V,
RG = 25ꢀ, ID = 200mA
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Electrical Characteristics P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-60
—
—
-25
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -50V, VGS = 0V
VGS = ±5V, VDS = 0V
nA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
—
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
—
50
—
—
2.7
3.2
—
-3.0
4
V
VGS(th)
VDS = VGS, ID = -250μA
V
GS = -10V, ID = -500mA
Static Drain-Source On-Resistance
ꢀ
RDS (ON)
6
VGS = -4.5V, ID = -200mA
VDS = -25V, ID = -100mA
VGS = 0V, IS = -115mA
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
mS
V
|Yfs|
VSD
—
-1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25
4.7
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2.7
0.28
0.14
0.08
5.5
V
GS = -4.5V, VDS = -10V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID = -500mA
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
7.9
VDD = -30V, VGS = -10V,
RG = 50ꢀ, ID = -270mA
Turn-Off Delay Time
10.6
11.6
tD(off)
tf
Turn-Off Fall Time
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
N-CHANNEL – Q1
1.0
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.8
0.6
T
= 150C
A
0.4
0.2
0
T
= 85C
A
T
= 125C
A
T
= 25C
A
0.1
0
T
= -55C
A
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN -SOURCE VOLTAGE(V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
10
1.0
0.1
10
V
= 5.0V
GS
T
= 150C
A
T
= 125C
A
T
= 85C
A
T
= 25C
A
1
T
= -55C
A
0.1
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
ID, DRAIN SOURCE CURRENT
ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
7
6
3.0
2.5
I
=150mA
D
I
=300mA
D
5
4
3
2
2.0
1.5
1.0
0.5
0
1
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
C)
Fig. 6 Static Drain-Source On-Resistance vs.
Gate-Source Voltage
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DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
50
40
1.0
0.9
f = 1MHz
0.8
0.7
0.6
0.5
0.4
C
ISS
30
20
10
0
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
0.3
0.2
T
= 25°C
A
C
OSS
T
= -55°C
C
A
RSS
0.1
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Typical Junction Capacitance
Fig. 7 Diode Forward Voltage vs. Current
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DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
P-CHANNEL – Q2
0.8
0.8
0.7
V
= -10V
V
= -5.0V
GS
0.7
0.6
0.5
0.4
0.3
0.2
DS
T
= -55C
A
0.6
0.5
0.4
0.3
0.2
T
= 25C
A
T
= 85C
A
T
= 125C
A
V
= -4.5V
GS
T
= 150C
A
V
= -4.0V
GS
V
V
= -3.0V
= -2.5V
GS
GS
0.1
0
0.1
0
V
= -2.0V
GS
0
1
2
3
4
5
0
1
2
3
4
5
-VDS, DRAIN -SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 9 Typical Output Characteristics
Fig. 10 Typical Transfer Characteristics
8
7
8
7
6
6
5
4
3
2
V
= -2.5V
5
4
3
2
GS
I
= 100mA
D
V
V
= -4.5V
= -10V
GS
GS
1
0
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-ID, DRAIN SOURCE CURRENT (A)
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Fig. 11 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.0
1.8
8
7
6
V
I
= -5.0V
GS
= -500mA
D
V
= -4.5V
GS
T
= 150
C
1.6
1.4
1.2
1.0
0.8
A
V
I
= -10V
GS
T
= 125C
A
= -500mA
D
5
4
T
= 85C
A
T
= 25C
A
3
2
0.6
0.4
T
= -55C
A
1
0
0.2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-ID, DRAIN SOURCE CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 14 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
Fig. 13 Typical On-Resistance vs.
Drain Current and Temperature
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DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
8
7
6
2.0
1.8
-I = 1mA
D
1.6
1.4
1.2
V
I
= -5V
GS
5
4
3
2
= -500mA
D
-I = 250µA
D
V
I
= -10V
GS
= -500mA
D
1.0
0.8
1
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 15 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
C)
Fig. 16 Gate Threshold Variation vs. Ambient Temperature
100
0.8
0.7
f = 1MHz
0.6
0.5
0.4
0.3
0.2
C
iss
10
T = 150C
A
T = 125
C
T = 85C
A
A
C
oss
T = 25C
A
C
rss
T = -55C
A
0.1
0
1
0
5
10
15
20
25
30
35 40
0
0.3
0.6
0.9
1.2
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 18 Typical Junction Capacitance
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 17 Diode Forward Voltage vs. Current
10
V
I
= -10V
DS
8
6
4
= -500mA
D
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Qg, TOTAL GATE CHARGE (nC)
Fig. 19 Gate-Charge Characteristics
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DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT563
Dim Min Max
Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
D
-
-
0.50
G
H
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
M
K
M
All Dimensions in mm
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.2
1.2
X
Y
C1
C2
0.375
0.5
1.7
C1
G
Y
Z
0.5
X
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© Diodes Incorporated
DMG1029SV
Document number: DS35421 Rev. 3 - 2
DMG1029SV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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Document number: DS35421 Rev. 3 - 2
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PANASONIC
![](http://pdffile.icpdf.com/pdf2/p00304/img/page/DMG204B0_1832668_files/DMG204B0_1832668_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00304/img/page/DMG204B0_1832668_files/DMG204B0_1832668_2.jpg)
DMG204B0
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN
PANASONIC
![](http://pdffile.icpdf.com/pdf2/p00294/img/page/DMG204B00R_1781018_files/DMG204B00R_1781018_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00294/img/page/DMG204B00R_1781018_files/DMG204B00R_1781018_2.jpg)
DMG204B00R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN
PANASONIC
![](http://pdffile.icpdf.com/pdf2/p00291/img/page/DMG204B1_1765327_files/DMG204B1_1765327_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00291/img/page/DMG204B1_1765327_files/DMG204B1_1765327_2.jpg)
DMG204B1
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, 6 PIN
PANASONIC
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